摘要:
There is provided an LED lamp unit comprising an LED lamp, a protective component for an LED lighting circuit, a circuit section and a case part, characterized in that the circuit section has a metal plate which is embedded in the case part with its surface partially exposed, a lead of the LED lamp is electrically connected to the exposed surface of the metal plate, and the protective component for the LED lighting circuit is connected to the metal plate at an opposite side to a side where the lead of the LED lamp is connected.
摘要:
The invention is an indicator lamp for warning signal to a person who approaches the vehicle to steal a vehicle. The indicator lamp includes a lamp unit including a light emitting diode (LED). The indicator lamp includes a light guide including an elongated portion and a cover portion. The elongated portion receives a light from the LED at one end and conveys the light to a light emitting end. The cover portion covers the LED of the lamp unit and is integrally formed with the elongated portion. The light guide connects with the lamp unit at the cover portion. The indicator lamp prevents rainwater from the top from entering the lamp unit.
摘要:
An LED lamp apparatus includes an LED and a light diffuser located on a light emission side of the LED. The light diffuser is made of at least one light transmittable material and has a light diffusing member at a peripheral portion of a light passing area of the LED. Alternatively, the light diffuser may be formed of at least one light transmittable material, and the light diffusing member may be located at a center portion of the light passing area of the LED.
摘要:
It is a light emitting apparatus having a light source, and also having a light guide element into which light from the light source is guided. The light source is accommodated in an accommodating portion formed a top-surface side of the light emitting element. In the bottom surface of the light guide element, a light emitting portion is formed at a portion which is located away from places directly below the light source and directly below an optical axis of the light source and which extends from a region placed obliquely frontwardly from the light source to a region placed laterally from the light source.
摘要:
The invention is an indicator lamp for warning signal to a person who approaches the vehicle to steal a vehicle. The indicator lamp includes a lamp unit including a light emitting diode (LED). The indicator lamp includes a light guide including an elongated portion and a cover portion. The elongated portion receives a light from the LED at one end and conveys the light to a light emitting end. The cover portion covers the LED of the lamp unit and is integrally formed with the elongated portion. The light guide connects with the lamp unit at the cover portion. The indicator lamp prevents rainwater from the top from entering the lamp unit.
摘要:
An LED lamp apparatus includes an LED and a light diffuser located on a light emission side of the LED. The light diffuser is made of at least one light transmittable material and has a light diffusing member at a peripheral portion of a light passing area of the LED. Alternatively, the light diffuser may be formed of at least one light transmittable material, and the light diffusing member may be located at a center portion of the light passing area of the LED.
摘要:
There is provided an LED lamp unit comprising an LED lamp, a protective component for an LED lighting circuit, a circuit section and a case part, characterized in that the circuit section has a metal plate which is embedded in the case part with its surface partially exposed, a lead of the LED lamp is electrically connected to the exposed surface of the metal plate, and the protective component for the LED lighting circuit is connected to the metal plate at an opposite side to a side where the lead of the LED lamp is connected.
摘要:
A semiconductor device has: a fuse having one end applied with a first voltage, and a MOS transistor having source, gate and drain and a connection point between the other end of the fuse and one of the source and drain, a second voltage lower than the first voltage applied to the other of the source and drain, wherein: the first and second voltages, characteristics of the MOS transistor and a resistance of the fuse are selected so that the fuse can be broken down when a predetermined program voltage is applied to the gate; and the resistance of the fuse is set to such a value as a voltage difference between a voltage at the connection point and the second voltage is lower than a drain voltage of the MOS transistor at which a drain current starts saturating, when the program voltage is applied to the gate.
摘要:
Capacitors are formed on an insulating film covering the surface of a semiconductor substrate. Each capacitor is constituted of a lower electrode layer of doped silicon, a dielectric film of silicon oxide formed on the lower electrode and an upper electrode layer of polycide formed on the dielectric film. Capacitors are divided into first and second groups. In the first group, the lower electrode layers are interconnected to form a first terminal and the upper electrode layers are interconnected to form a second terminal. In the second group, the upper electrodes are all connected to the first terminal and the lower electrodes are all connected to the second terminal. A capacitor device is provided which mitigates a capacitance value change dependency upon an applied voltage and is easy to be manufactured.
摘要:
A semiconductor device has: a fuse having one end applied with a first voltage, and a MOS transistor having source, gate and drain and a connection point between the other end of the fuse and one of the source and drain, a second voltage lower than the first voltage applied to the other of the source and drain, wherein: the first and second voltages, characteristics of the MOS transistor and a resistance of the fuse are selected so that the fuse can be broken down when a predetermined program voltage is applied to the gate; and the resistance of the fuse is set to such a value as a voltage difference between a voltage at the connection point and the second voltage is lower than a drain voltage of the MOS transistor at which a drain current starts saturating, when the program voltage is applied to the gate.