公开(公告)号：US06740160B2

公开(公告)日：2004-05-25

申请号：US10105634

申请日：2002-03-26

申请人： Takayuki Kubo ,  Hiroshi Asano ,  Fumio Kawahigashi ,  Akira Tsujino

发明人： Takayuki Kubo ,  Hiroshi Asano ,  Fumio Kawahigashi ,  Akira Tsujino

IPC分类号： C30B3500

CPC分类号： C30B15/14 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： In a high rate pulling with a cooler 10 surrounding a single crystal 8, steam explosion by leakage from the cooler 10 is prevented. Flow rates La, Lb of cooling water are measured by flowmeters 14a, 14b on a cooling water inflow side and cooling water outflow side of the cooler 10. When flow rate difference &Dgr;L (La−Lb) determined from the flow rates La, Lb exceeds 20 cc/minute, open/close valves 15a, 15b, 15c are operated to stop water supply to the cooler 10 and drain outward the cooing water in the cooler 10.

摘要翻译： 在围绕单晶8的冷却器10的高速率牵引中，防止从冷却器10泄漏的蒸汽爆炸。 通过冷却水流入侧的流量计14a，14b和冷却器10的冷却水流出侧测量冷却水的流量La，Lb。当根据流量La，Lb求出的流量差ΔL（La-Lb）超过 操作20cc /分钟，打开/关闭阀门15a，15b，15c停止向冷却器10供水并向外排出冷却器10中的冷却水。

公开(公告)号：US06764547B2

公开(公告)日：2004-07-20

申请号：US10149223

申请日：2002-10-15

申请人： Takayuki Kubo ,  Fumio Kawahigashi ,  Hiroshi Asano ,  Naohiro Takaoka

发明人： Takayuki Kubo ,  Fumio Kawahigashi ,  Hiroshi Asano ,  Naohiro Takaoka

IPC分类号： C30B3500

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/206 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： An apparatus for growing a crystal, using the cooler 10 surrounding the single crystal 8 for high speed pulling. The cooler 10 is prepared using a copper-based metal and is water cooled. The supporting arm 12 that supports the cooler 10 is prepared using stainless steel or the like, which is higher in mechanical strength than copper-based metals and is inferior in thermal conductivity, and is detachably connected to the cooler 10. Excessive cooling of the supporting arm 12 and disposition due to precipitation of silicon oxide are prevented, leading to improvement in disposition free pulling rate without the prevention of speed-up. The cost of manufacture of the cooler 10 is saved. The support strength of the cooler is improved.

摘要翻译： 使用围绕单晶8的冷却器10进行高速拉制的用于生长晶体的装置。 冷却器10使用铜基金属制备并且被水冷却。 支撑冷却器10的支撑臂12使用与铜基金属相比机械强度更高的不锈钢等制造，并且导热性差，并且可拆卸地连接到冷却器10.支撑件的过度冷却 防止由于氧化硅的沉淀引起的臂12和配置，从而在不防止加速的情况下提高配置自由拉拔率。 节省了冷却器10的制造成本。 冷却器的支撑强度提高。

公开(公告)号：US06702892B2

公开(公告)日：2004-03-09

申请号：US09926285

申请日：2001-11-20

申请人： Masahiko Okui ,  Manabu Nishimoto ,  Takayuki Kubo ,  Fumio Kawahigashi ,  Hiroshi Asano

发明人： Masahiko Okui ,  Manabu Nishimoto ,  Takayuki Kubo ,  Fumio Kawahigashi ,  Hiroshi Asano

IPC分类号： C30B1514

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/106 ,  Y10T117/1068

摘要： An apparatus is provided which is to be used in producing single crystals for silicon wafers useful as semiconductor materials and which can stably produce large-diameter, long-length and high-quality single crystals from which wafers limited in the number of grown-in defects can be taken. This silicon single crystal production apparatus comprises a cooling member surrounding the single crystal to be pulled up and having an internal surface coaxial with the pulling axis and thermal insulating members disposed outside the outer surface and below the bottom surface of the cooling member, the cooling member having an internal surface diameter of 1.20D to 2.50D (D being the diameter of the single crystal to be pulled up) and a length of not less than 0.25D, the distance from the melt surface to the bottom surface of the cooling member being 0.30D to 0.85D and the bottom side of the thermal insulating member below the cooling member having an inside diameter smaller than the inside diameter of the bottom of the cooling member.

摘要翻译： 提供了一种用于制造用作半导体材料的硅晶片的单晶的装置，其可以稳定地生产大直径，长长和高质量的单晶，其中限制了多个生长缺陷的晶片 可以服用 这种硅单晶制造装置包括围绕单晶的被拉起并具有与牵引轴同轴的内表面的冷却构件和设置在冷却构件的外表面的外表面的外表面的下方的隔热构件， 内表面直径为1.20D至2.50D（D为待拉起的单晶的直径），长度不小于0.25D，从冷却件的熔体表面到底表面的距离为 0.30D至0.85D，并且所述隔热构件的底部在所述冷却构件下方的内径小于所述冷却构件的底部的内径。

公开(公告)号：US06767400B2

公开(公告)日：2004-07-27

申请号：US10130671

申请日：2002-09-24

申请人： Takayuki Kubo ,  Fumio Kawahigashi ,  Hiroshi Asano ,  Shinichiro Miki ,  Manabu Nishimoto

发明人： Takayuki Kubo ,  Fumio Kawahigashi ,  Hiroshi Asano ,  Shinichiro Miki ,  Manabu Nishimoto

IPC分类号： C30B1520

CPC分类号： C30B15/14 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： In the CZ process using a cooling member surrounding a single crystal, the cooling member is permitted to effectively serve to increase a pulling speed. Cracks of the single crystal due to excessive cooling are prevented to occur. A high crystal quality is acquired. In order to realize these objects, the temperature of the inner peripheral surface of the cooling member 6 opposing to the outer peripheral surface of the single crystal 4 is restricted to 500° C. or below, even in the lower end, the temperature of which becomes the highest. To achieve this restriction, the thickness T of the cooling member 5 is 10 to 50 mm. The height H of the cooling member 6 is 0.1 to 1.5 times the diameter D of the single crystal 4.

摘要翻译： 在使用围绕单晶的冷却构件的CZ工艺中，允许冷却构件有效地用于增加拉制速度。 防止由于过度冷却导致的单晶的裂纹发生。 获得高质量的晶体。 为了实现这些目的，与单晶4的外周面相对的冷却部件6的内周面的温度即使在下端也被限制在500℃以下，其温度 成为最高的。 为了达到上述限制，冷却部件5的厚度T为10〜50mm。 冷却部件6的高度H为单晶4的直径D的0.1〜1.5倍。