公开(公告)号：US06607650B1

公开(公告)日：2003-08-19

申请号：US09665576

申请日：2000-09-18

申请人： Takayuki Niuya ,  Michihiro Ono ,  Hideto Goto ,  Kyungho Park ,  Yoshinori Marumo ,  Katsusuke Shimizu

发明人： Takayuki Niuya ,  Michihiro Ono ,  Hideto Goto ,  Kyungho Park ,  Yoshinori Marumo ,  Katsusuke Shimizu

IPC分类号： C25D548

CPC分类号： H01L21/76877 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

摘要： The object of the present invention is to provide a plating method capable of planarization process of high quality in comparison with the conventional plating method and also provide a plating device and a plating system adopting the plating method of the invention. In the plating method and device, an object 10 to be processed and an electrode plate 20 are dipped in a solution including objective metal ions and a forward current is supplied between the object and the electrode plate to educe a metal on the surface of the object. After forming a plating film on the object excessively, a backward current is supplied between the object 10 and the electrode 20 to uniformly remove at least part of superfluous plating film.

摘要翻译： 本发明的目的是提供一种与传统的镀覆方法相比能够进行高质量平坦化处理的电镀方法，并且还提供了采用本发明的电镀方法的电镀装置和电镀系统。 在电镀方法和装置中，将待处理物体10和电极板20浸入包含目标金属离子的溶液中，并且在物体和电极板之间提供正向电流以在物体的表面上还原金属 。 在物体上过度地形成镀膜之后，在物体10和电极20之间提供反向电流，以均匀地去除至少一部分多余的镀膜。

公开(公告)号：US06838370B1

公开(公告)日：2005-01-04

申请号：US09658193

申请日：2000-09-08

申请人： Takayuki Niuya ,  Michihiro Ono ,  Hideto Goto

发明人： Takayuki Niuya ,  Michihiro Ono ,  Hideto Goto

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/02074 ,  H01L21/67028 ,  H01L21/6704 ,  H01L21/76834 ,  H01L21/7684

摘要： The present invention is directed to suppressing the rise of a dielectric constant of insulating film during a procedure of burying wiring in semiconductor devices by using a damascene process, and it is also directed to simplifying a process of manufacturing the semiconductor devices. In terms of a process step of forming protection film on a metal layer during the damascene process, there is employed a combined arrangement of a wash unit where particles are removed from polished substrates with a processing unit where a solution containing an organic substance such as benzotriazole, which tends to be bound to the metal layers, is applied to the metal layers over the substrates after the particles are removed therefrom. For the combined arrangement of the processing unit and the wash unit, either a batch processing unit or a mono/serial processing unit can be employed.

摘要翻译： 本发明旨在通过使用镶嵌工艺来抑制半导体器件中的布线布线过程中绝缘膜的介电常数的上升，并且还旨在简化半导体器件的制造工艺。 关于在镶嵌工艺期间在金属层上形成保护膜的工艺步骤，采用洗涤单元的组合布置，其中颗粒从抛光的基底上除去处理单元，其中含有有机物质如苯并三唑 倾向于与金属层结合的金属层在除去颗粒之后被施加到基板上的金属层上。 对于处理单元和洗涤单元的组合布置，可以采用批量处理单元或单/串行处理单元。

公开(公告)号：US06478035B1

公开(公告)日：2002-11-12

申请号：US09634005

申请日：2000-08-07

申请人： Takayuki Niuya ,  Michihiro Ono ,  Hideto Gotoh ,  Hiroyuki Mori

发明人： Takayuki Niuya ,  Michihiro Ono ,  Hideto Gotoh ,  Hiroyuki Mori

IPC分类号： B08B304

CPC分类号： H01L21/67057 ,  B08B3/12 ,  H01L21/31133 ,  H01L21/76814 ,  Y10S134/902

摘要： There is provided a cleaning device capable of preventing a metal wiring layer or the like of an object to be treated, from being oxidized. The cleaning device comprises: a cleaning container 72 having a treating space S having a slightly larger volume than that of an object W to be treated; a fluid storage tank 30 for storing a cleaning fluid 32 for treating the object; supply lines 46A through 46D for supplying the cleaning fluid from the fluid storage tank to the cleaning container; and reflux lines 47A through 47D for returning the cleaning fluid from the cleaning container to the fluid storage tank, wherein the cleaning container, the fluid storage tank, the supply lines and the reflux lines are associated with each other for forming closed cleaning fluid circulating lines 51A through 51D. Thus, it is possible to prevent the metal wiring layer or the like of the object from being oxidized.

摘要翻译： 提供了能够防止被处理物的金属布线层等被氧化的​​清洁装置。 清洁装置包括：具有处理空间S的清洁容器72，处理空间S具有比要处理的物体W的体积稍大的体积; 用于存储用于处理物体的清洁流体32的流体储存罐30; 供应管线46A至46D，用于将清洁流体从流体储存罐供应到清洁容器; 以及回流管线47A至47D，用于将清洁流体从清洁容器返回到流体储存罐，其中清洁容器，流体储存罐，供应管线和回流管线彼此相关联，用于形成封闭的清洁流体循环管线 51A至51D。 因此，可以防止物体的金属布线层等被氧化。

公开(公告)号：US4688065A

公开(公告)日：1987-08-18

申请号：US903844

申请日：1986-09-04

申请人： Hiroyuki Kinoshita ,  Michihiro Ono

发明人： Hiroyuki Kinoshita ,  Michihiro Ono

IPC分类号： H03F1/52 ,  H01L21/8234 ,  H01L21/8247 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H02H7/20 ,  H03F1/00 ,  H03F1/42

CPC分类号： H01L29/78 ,  H01L27/0251

摘要： A MOS type semiconductor device with a gate protecting circuit for protecting an internal circuit is disclosed. Distance between the input section diffusion layer in the gate protecting circuit and the diffusion layers in the internal circuit is selected at such values that minority carriers derived from the diffusion layer in the internal circuit are prevented from reaching a depletion layer in the gate protecting circuit which is caused by the impression thereto of a surge voltage, and are also selected to at least ten times a predetermined minimum distance each separating the adjacent diffusion layers of those.

摘要翻译： 公开了一种具有用于保护内部电路的栅极保护电路的MOS型半导体器件。 选择栅极保护电路中的输入部扩散层与内部电路的扩散层之间的距离，使得从内部电路中的扩散层得到的少数载流子不能到达栅极保护电路的耗尽层， 是由其对浪涌电压的印象造成的，并且还被选择为至少十倍于预定的最小距离，每个隔离其相邻的扩散层。