公开(公告)号：US5118944A

公开(公告)日：1992-06-02

申请号：US686439

申请日：1991-04-17

申请人： Takehisa Mori ,  Hisanaga Kiba

发明人： Takehisa Mori ,  Hisanaga Kiba

IPC分类号： G01J5/08 ,  G01J5/20 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/18

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/04 ,  G01J5/045 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0831 ,  G01J5/0846 ,  G01J5/20 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/035281 ,  H01L31/1804 ,  G01J2005/068 ,  Y02E10/547 ,  Y02P70/521

摘要： Disclosed is an infrared ray sensor and a method of manufacturing the same. The infrared ray sensor includes a sensor substrate formed of an infrared ray transmitting material and having a first surface and a second surface which is in opposed relation to the first surface, an infrared ray reflecting film provided on the first surface of the sensor substrate, infrared ray detecting elements provided on the second surface of the sensor substrate, and an infrared ray transmitting window formed in the infrared ray reflecting film in relation to the infrared ray detecting elements. The infrared ray which enters the infrared ray transmitting window portion passes through the sensor substrate and is then made incident on the infrared ray detecting elements. Bridges are formed on the second surface of the sensor substrate. Each of the bridges is a silicon oxynitride film having a single layer configuration.