公开(公告)号：US08200096B2

公开(公告)日：2012-06-12

申请号：US12518093

申请日：2007-12-06

申请人： Takemasa Tamanuki ,  Won-Seok Jung

发明人： Takemasa Tamanuki ,  Won-Seok Jung

IPC分类号： H04B10/22

CPC分类号： H04B10/40

摘要： An optical transceiver which converts a plurality of optical signals input from a first side into electrical signals so as to output the electrical signals to a second side and converts a plurality of electrical signals input from the second side into optical signals so as to output the optical signals to the first side.

摘要翻译： 一种光收发器，其将从第一侧输入的多个光信号转换为电信号，以将电信号输出到第二侧，并将从第二侧输入的多个电信号转换为光信号，以输出光信号 信号到第一侧。

公开(公告)号：US20100322636A1

公开(公告)日：2010-12-23

申请号：US12518093

申请日：2007-12-06

申请人： Takemasa Tamanuki ,  Won-Seok Jung

发明人： Takemasa Tamanuki ,  Won-Seok Jung

IPC分类号： H04B10/02

CPC分类号： H04B10/40

摘要： An optical transceiver which converts a plurality of optical signals input from a first side into electrical signals so as to output the electrical signals to a second side and converts a plurality of electrical signals input from the second side into optical signals so as to output the optical signals to the first side.

摘要翻译： 一种光收发器，其将从第一侧输入的多个光信号转换为电信号，以将电信号输出到第二侧，并将从第二侧输入的多个电信号转换为光信号，以输出光信号 信号到第一侧。

公开(公告)号：US08080843B2

公开(公告)日：2011-12-20

申请号：US13152307

申请日：2011-06-03

申请人： Jin-Taek Park ,  Won-Seok Jung

发明人： Jin-Taek Park ,  Won-Seok Jung

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L27/11573 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/11565

摘要： Provided are nonvolatile memory devices and methods of forming nonvolatile memory devices. Nonvolatile memory devices include a device isolation layer that defines an active region in a substrate. Nonvolatile memory devices further include a first insulating layer, a nonconductive charge storage pattern, a second insulating layer and a control gate line that are sequentially disposed on the active region. The charge storage pattern includes a horizontal portion and a protrusion disposed on an upper portion of an edge of the horizontal portion.

公开(公告)号：US5878006A

公开(公告)日：1999-03-02

申请号：US853749

申请日：1997-05-09

申请人： Won-Seok Jung

发明人： Won-Seok Jung

IPC分类号： G11B20/10 ,  G11B7/00 ,  G11B7/005 ,  G11B7/085

CPC分类号： G11B7/08541

摘要： A track cross signal correction apparatus removes noise components contained in a track cross signal. The apparatus includes mask signal generator for comparing pulse widths of the received track cross signals with threshold values, based on the pulse width of a previous track cross signal. A mask signal is generated according to the comparison result. A corrector outputs a received track cross signal when mask signals are generated from the mask signal generator. The track cross signal correction apparatus accurately performs a track seek operation in a medium such as a CD-ROM which requires high-speed access.

摘要翻译： 轨道交叉信号校正装置去除包含在轨道交叉信号中的噪声分量。 该装置包括掩模信号发生器，用于基于先前的轨道交叉信号的脉冲宽度，将接收的轨道交叉信号的脉冲宽度与阈值进行比较。 根据比较结果生成屏蔽信号。 当从掩模信号发生器产生掩蔽信号时，校正器输出接收的轨道交叉信号。 轨道交叉信号校正装置在需要高速存取的诸如CD-ROM的介质中精确地执行轨道搜索操作。

公开(公告)号：US20110289284A1

公开(公告)日：2011-11-24

申请号：US13110411

申请日：2011-05-18

申请人： Won-Seok Jung ,  Wooseok Chang ,  Hyoung-Jin Yun

发明人： Won-Seok Jung ,  Wooseok Chang ,  Hyoung-Jin Yun

IPC分类号： G06F9/46 ,  G06F12/00

CPC分类号： G06F9/544

摘要： Provided are a multi-process device and an inter-process communication (IPC) method thereof. The multi-processor device includes a first processor, a second processor, a first memory connected to the first processor, and a second memory connected to the second processor. When an inter-process communication (IPC) operation is performed between the first processor and the second processor, data is exchanged between the first memory and the second memory.

摘要翻译： 提供了一种多处理设备及其进程间通信（IPC）方法。 多处理器设备包括第一处理器，第二处理器，连接到第一处理器的第一存储器和连接到第二处理器的第二存储器。 当在第一处理器和第二处理器之间执行进程间通信（IPC）操作时，在第一存储器和第二存储器之间交换数据。

公开(公告)号：US07977732B2

公开(公告)日：2011-07-12

申请号：US12238476

申请日：2008-09-26

申请人： Jin-Taek Park ,  Won-Seok Jung

发明人： Jin-Taek Park ,  Won-Seok Jung

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L27/11573 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/11565

摘要： Provided are nonvolatile memory devices and methods of forming nonvolatile memory devices. Nonvolatile memory devices include a device isolation layer that defines an active region in a substrate. Nonvolatile memory devices further include a first insulating layer, a nonconductive charge storage pattern, a second insulating layer and a control gate line that are sequentially disposed on the active region. The charge storage pattern includes a horizontal portion and a protrusion disposed on an upper portion of an edge of the horizontal portion.

摘要翻译： 提供了非易失性存储器件和形成非易失性存储器件的方法。 非易失性存储器件包括限定衬底中的有源区的器件隔离层。 非易失性存储器件还包括顺序地设置在有源区上的第一绝缘层，非导电电荷存储图案，第二绝缘层和控制栅极线。 电荷存储图案包括水平部分和设置在水平部分的边缘的上部上的突起。

公开(公告)号：US07547942B2

公开(公告)日：2009-06-16

申请号：US11709816

申请日：2007-02-23

申请人： Sang-Hun Jeon ,  Chang-Seok Kang ,  Jung-Dal Choi ,  Jin-Taek Park ,  Woong-Hee Sohn ,  Won-Seok Jung

发明人： Sang-Hun Jeon ,  Chang-Seok Kang ,  Jung-Dal Choi ,  Jin-Taek Park ,  Woong-Hee Sohn ,  Won-Seok Jung

IPC分类号： H01L21/00

CPC分类号： H01L27/11546 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11568 ,  H01L29/518 ,  H01L29/78

摘要： A nonvolatile memory device includes a semiconductor substrate including a cell region and a peripheral circuit region, a cell gate on the cell region, and a peripheral circuit gate on the peripheral circuit region, wherein the cell gate includes a charge storage insulating layer on the semiconductor substrate, a gate electrode on the charge storage insulating layer, and a conductive layer on the gate electrode, and the peripheral circuit gate includes a gate insulating layer on the semiconductor substrate, a semiconductor layer on the gate insulating layer, an ohmic layer on the semiconductor layer, and the conductive layer on the ohmic layer.

摘要翻译： 非易失性存储器件包括：包括单元区域和外围电路区域的半导体衬底，单元区域上的单元栅极和外围电路区域上的外围电路栅极，其中，所述单元栅极包括半导体上的电荷存储绝缘层 基板，电荷存储绝缘层上的栅极电极和栅电极上的导电层，外围电路栅极包括在半导体基板上的栅极绝缘层，栅极绝缘层上的半导体层， 半导体层和欧姆层上的导电层。

公开(公告)号：US20160104719A1

公开(公告)日：2016-04-14

申请号：US14801430

申请日：2015-07-16

申请人： Won-Seok Jung ,  Youngok Kim ,  Jihye Kim ,  Kyungjoong Joo

发明人： Won-Seok Jung ,  Youngok Kim ,  Jihye Kim ,  Kyungjoong Joo

IPC分类号： H01L27/115 ,  H01L29/51 ,  H01L29/423 ,  H01L23/535

CPC分类号： H01L27/11582 ,  H01L27/0688 ,  H01L27/1157 ,  H01L27/11578 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device may include stacks arranged in a first direction and vertical channel structures provided through the stacks. Each of the stacks may include gate electrodes and insulating layers alternately stacked on a substrate. Each of the vertical channel structures may include a semiconductor pattern connected to the substrate and a vertical channel pattern connected to the semiconductor pattern. Each of the semiconductor patterns may have a recessed sidewall, and the semiconductor patterns may have minimum widths different from each other.

摘要翻译： 半导体存储器件可以包括沿第一方向布置的堆叠和通过堆叠提供的垂直沟道结构。 每个堆叠可以包括交替层叠在基板上的栅电极和绝缘层。 每个垂直沟道结构可以包括连接到衬底的半导体图案和连接到半导体图案的垂直沟道图案。 每个半导体图案可以具有凹入的侧壁，并且半导体图案可以具有彼此不同的最小宽度。

公开(公告)号：US09274860B2

公开(公告)日：2016-03-01

申请号：US13110411

申请日：2011-05-18

申请人： Won-Seok Jung ,  Wooseok Chang ,  Hyoung-Jin Yun

发明人： Won-Seok Jung ,  Wooseok Chang ,  Hyoung-Jin Yun

IPC分类号： G06F3/00 ,  G06F9/44 ,  G06F9/46 ,  G06F13/00 ,  G06F9/54

CPC分类号： G06F9/544

摘要： Provided are a multi-process device and an inter-process communication (IPC) method thereof. The multi-processor device includes a first processor, a second processor, a first memory connected to the first processor, and a second memory connected to the second processor. When an inter-process communication (IPC) operation is performed between the first processor and the second processor, data is exchanged between the first memory and the second memory.

摘要翻译： 提供了一种多处理设备及其进程间通信（IPC）方法。 多处理器设备包括第一处理器，第二处理器，连接到第一处理器的第一存储器和连接到第二处理器的第二存储器。 当在第一处理器和第二处理器之间执行进程间通信（IPC）操作时，在第一存储器和第二存储器之间交换数据。

公开(公告)号：US20110095351A1

公开(公告)日：2011-04-28

申请号：US12980399

申请日：2010-12-29

申请人： Sang-Hun Jeon ,  Jung-Dal Choi ,  Chang-Seok Kang ,  Won-Seok Jung

发明人： Sang-Hun Jeon ,  Jung-Dal Choi ,  Chang-Seok Kang ,  Won-Seok Jung

IPC分类号： H01L29/788

CPC分类号： H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A semiconductor device includes a device isolation layer in a semiconductor substrate, an active region defined by the device isolation layer, the active region including a main surface and a recess region including a bottom surface that is lower than the main surface, and a gate electrode formed over the recess region, wherein a top surface of the device isolation layer adjacent to the recess region is lower than the bottom surface of the recess region.

摘要翻译： 半导体器件包括在半导体衬底中的器件隔离层，由器件隔离层限定的有源区，包括主表面的有源区和包括低于主表面的底表面的凹陷区，以及栅电极 形成在所述凹部区域上，其中，所述器件隔离层的与所述凹部区域相邻的顶面低于所述凹部区域的底面。