摘要:
A polishing method for a semiconductor wafer having a polishing target surface at a periphery portion thereof is disclosed. The method includes pressing a polishing member against the polishing target surface along a circumference of the semiconductor wafer by a plurality of pressing portions while rotating the semiconductor wafer in a circumferential direction, thereby polishing the polishing target surface of the semiconductor wafer.
摘要:
A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film. A method of manufacturing a semiconductor device includes: forming an insulating film on a frontside and periphery of a silicon-based substrate; forming a workpiece by selectively etching away the insulating film to expose a portion of the frontside of the silicon-based substrate; forming a first oxide film at an exposed part of the silicon-based substrate, the exposed part being formed in the insulating film of the periphery during the selective etching; depositing a metal film on the frontside of the workpiece after the first oxide film is formed; and allowing the metal film to react with the portion of the frontside of the silicon-based substrate by heat treatment.
摘要:
A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film. A method of manufacturing a semiconductor device includes: forming an insulating film on a frontside and periphery of a silicon-based substrate; forming a workpiece by selectively etching away the insulating film to expose a portion of the frontside of the silicon-based substrate; forming a first oxide film at an exposed part of the silicon-based substrate, the exposed part being formed in the insulating film of the periphery during the selective etching; depositing a metal film on the frontside of the workpiece after the first oxide film is formed; and allowing the metal film to react with the portion of the frontside of the silicon-based substrate by heat treatment.
摘要:
A polishing apparatus has a polishing tape (21), a supply reel (22) for supplying the polishing tape (21) to a contact portion (30) at which the polishing tape (21) is brought into contact with a notch portion (11) of a substrate (10), and a take-up reel (23) for winding up the polishing tape (21) from the contact portion (30). The polishing apparatus also has a first guide portion (24) having as guide surface (241) for supplying the polishing tape (21) directly to the contact portion (30), and a second guide portion (25) having a guide surface for supplying the polishing tape (21) tot the take-up reel (23). The guide surface (241) of the first guide portion (24) and/or the guide surface of the second guide portion (25) has a shape corresponding to a shape of the notch portion (11) of the substrate (10).
摘要:
There is disclosed a substrate processing method of polishing a peripheral portion of a substrate to-be-processed by sliding a polishing member and the peripheral portion of the substrate to each other to remove a SiN film deposited on the peripheral portion of the substrate. The method includes supplying a solution containing at least one of polyethyleneimine and tetramethylammonium hydroxide to a slide portion between the peripheral portion of the substrate and the polishing member.
摘要:
A method of judging a residual film on a sample by an optical measurement, the sample including a first metal film whose reflectance is changed depending on a wavelength of measuring light, and an insulating film formed above the first metal film, and the residual film being a second metal film above the insulating film, the method comprising irradiating the sample with a measuring light so as to measure a change in intensity of light reflected from the sample depending on the wavelength of the measuring light, thereby obtaining a reflectance spectrum curve, and dividing the reflectance spectrum curve into a plurality of wavelength regions so as to judge presence or absence of the second metal film above the insulating film depending on a waveform in each of the wavelength regions of the reflectance spectrum curve.
摘要:
A polishing apparatus has a polishing tape (21), a supply reel (22) for supplying the polishing tape (21) to a contact portion (30) at which the polishing tape (21) is brought into contact with a notch portion (11) of a substrate (10), and a take-up reel (23) for winding up the polishing tape (21) from the contact portion (30). The polishing apparatus also has a first guide portion (24) having as guide surface (241) for supplying the polishing tape (21) directly to the contact portion (30), and a second guide portion (25) having a guide surface for supplying the polishing tape (21) tot the take-up reel (23). The guide surface (241) of the first guide portion (24) and/or the guide surface of the second guide portion (25) has a shape corresponding to a shape of the notch portion (11) of the substrate (10).
摘要:
A substrate processing apparatus polishes a to-be-polished portion of a semiconductor substrate with a polishing tape. Part of the polishing tape is heated in advance. Part of the polishing tape is deformed conforming to a shape of the to-be-polished portion. Part of the deformed polishing tape is brought into contact with the to-be-polished portion of the substrate. The substrate and polishing tape are moved relative to each other.
摘要:
A method of inspecting a process for manufacturing a semiconductor device, used to determine the status of a processing operation during the manufacturing process, according to the embodiment of the present invention, comprises: detecting an image of a desired area of a surface of a semiconductor workpiece after it has been subjected to the processing operation, using an image signal detector; detecting image signal intensity at each pixel of a plurality of pixels of the image signal detector; and determining the status of the processing operation based on the relationship between the image signal intensity and the number of pixels at each of certain levels of the image signal intensity. A method of manufacturing a semiconductor device is made by utilizing the above-described inspection method.
摘要:
A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.