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    POLISHING APPARATUS AND POLISHING METHOD
    1.
    发明申请
    POLISHING APPARATUS AND POLISHING METHOD 有权
    抛光装置和抛光方法

    公开(公告)号：US20110217906A1

    公开(公告)日：2011-09-08

    申请号：US13036114

    申请日：2011-02-28

    申请人： Masayuki NAKANISHI ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

    发明人： Masayuki NAKANISHI ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

    IPC分类号： B24B1/00 ,  B24B55/00

    CPC分类号： B24B1/00 ,  B24B55/00

    摘要： A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.

    摘要翻译： 抛光装置可以有效地防止研磨颗粒在抛光过程中从抛光带上脱落。 抛光装置包括：抛光头，用于通过将具有固定在表面上的研磨颗粒的研磨带的表面按压在基板的周边部分上，同时允许研磨带沿单向移动来抛光基板的周边部分 ; 以及调整装置，其设置在研磨带的行进方向上的抛光头的上游，用于预先调整研磨带的表面，以防止研磨颗粒在抛光期间从研磨带的表面脱落。

    Polishing apparatus and polishing method
    2.
    发明授权
    Polishing apparatus and polishing method 有权
    抛光设备和抛光方法

    公开(公告)号：US08641480B2

    公开(公告)日：2014-02-04

    申请号：US13036114

    申请日：2011-02-28

    申请人： Masayuki Nakanishi ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

    发明人： Masayuki Nakanishi ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

    IPC分类号： B24B1/00

    CPC分类号： B24B1/00 ,  B24B55/00

    摘要： A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.

    摘要翻译： 抛光装置可以有效地防止研磨颗粒在抛光过程中从抛光带上脱落。 抛光装置包括：抛光头，用于通过将具有固定在表面上的研磨颗粒的研磨带的表面按压在基板的周边部分上，同时允许研磨带沿单向移动来抛光基板的周边部分 ; 以及调整装置，其设置在研磨带的行进方向上的抛光头的上游，用于预先调整研磨带的表面，以防止研磨颗粒在抛光期间从研磨带的表面脱落。

    Semiconductor device
    6.
    发明申请
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US20050167842A1

    公开(公告)日：2005-08-04

    申请号：US10974922

    申请日：2004-10-28

    申请人： Naofumi Nakamura ,  Noriaki Matsunaga ,  Sachiyo Ito ,  Masahiko Hasunuma ,  Takeshi Nishioka

    发明人： Naofumi Nakamura ,  Noriaki Matsunaga ,  Sachiyo Ito ,  Masahiko Hasunuma ,  Takeshi Nishioka

    IPC分类号： H01L23/52 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/00 ,  H01L23/522 ,  H01L23/58 ,  H01L27/04 ,  H01L27/10 ,  H01L29/40

    CPC分类号： H01L23/564 ,  H01L23/522 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a first insulating layer provided above a semiconductor substrate. The first insulating layer includes a layer consisting essentially of a material having a relative dielectric constant smaller than 3. The first insulating layer includes a first integral structure consisting of a plug and wiring. The upper surface of the wiring is flush with the upper surface of the first insulating layer, and the lower surface of the plug is flush with the lower surface of the first insulating layer. A region protective member is formed of a second integral structure consisting of a plug and wiring. The second integral structure extends from the upper surface of the first insulating layer to the lower surface of the first insulating layer. The region protective member surrounds one of first to n-th regions (n being a natural 2 or more) partitioned by a boundary region on a horizontal plane.

    摘要翻译： 半导体器件包括设置在半导体衬底之上的第一绝缘层。 第一绝缘层包括基本上由相对介电常数小于3的材料组成的层。第一绝缘层包括由插头和布线组成的第一整体结构。 布线的上表面与第一绝缘层的上表面齐平，插头的下表面与第一绝缘层的下表面齐平。 区域保护构件由由插头和布线组成的第二整体结构形成。 第二整体结构从第一绝缘层的上表面延伸到第一绝缘层的下表面。 区域保护构件围绕由水平面上的边界区划分的第一至第n区域（n为自然2以上）中的一个。

    Method of manufacturing semiconductor device
    7.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07985685B2

    公开(公告)日：2011-07-26

    申请号：US12262439

    申请日：2008-10-31

    申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

    发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

    IPC分类号： H01L21/311

    CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

    摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

    摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07339256B2

    公开(公告)日：2008-03-04

    申请号：US10974922

    申请日：2004-10-28

    申请人： Naofumi Nakamura ,  Noriaki Matsunaga ,  Sachiyo Ito ,  Masahiko Hasunuma ,  Takeshi Nishioka

    发明人： Naofumi Nakamura ,  Noriaki Matsunaga ,  Sachiyo Ito ,  Masahiko Hasunuma ,  Takeshi Nishioka

    IPC分类号： H01L29/72

    CPC分类号： H01L23/564 ,  H01L23/522 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a first insulating layer provided above a semiconductor substrate. The first insulating layer includes a layer consisting essentially of a material having a relative dielectric constant smaller than 3. The first insulating layer includes a first integral structure consisting of a plug and wiring. The upper surface of the wiring is flush with the upper surface of the first insulating layer, and the lower surface of the plug is flush with the lower surface of the first insulating layer. A region protective member is formed of a second integral structure consisting of a plug and wiring. The second integral structure extends from the upper surface of the first insulating layer to the lower surface of the first insulating layer. The region protective member surrounds one of first to n-th regions (n being a natural 2 or more) partitioned by a boundary region on a horizontal plane.

    摘要翻译： 半导体器件包括设置在半导体衬底之上的第一绝缘层。 第一绝缘层包括基本上由相对介电常数小于3的材料组成的层。第一绝缘层包括由插头和布线组成的第一整体结构。 布线的上表面与第一绝缘层的上表面齐平，插头的下表面与第一绝缘层的下表面齐平。 区域保护构件由由插头和布线组成的第二整体结构形成。 第二整体结构从第一绝缘层的上表面延伸到第一绝缘层的下表面。 区域保护构件围绕由水平面上的边界区划分的第一至第n区域（n为自然2以上）中的一个。

    Two-wire termination impedance generation circuit of subscriber circuit
    10.
    发明授权
    Two-wire termination impedance generation circuit of subscriber circuit 失效
    用户电路的二线终端阻抗产生电路

    公开(公告)号：US5402485A

    公开(公告)日：1995-03-28

    申请号：US189412

    申请日：1994-01-31

    申请人： Kenji Takato ,  Kazuhiro Yoshida ,  Kazuyuki Minohara ,  Yoshinobu Imai ,  Takeshi Nishioka

    发明人： Kenji Takato ,  Kazuhiro Yoshida ,  Kazuyuki Minohara ,  Yoshinobu Imai ,  Takeshi Nishioka

    IPC分类号： H04Q3/42 ,  H04M3/00 ,  H04M19/00 ,  H04M1/76

    CPC分类号： H04M3/005 ,  H04M19/005

    摘要： A two-wire termination impedance generation circuit of a subscriber circuit including differential amplifiers, which is provided with a network circuit including capacitors and resistors, an input point, and current sources, the capacitor being comprised of series connected first and second capacitors, the resistor being comprised of series connected first and second resistors and having a high band bypass capacitor connected at the intermediate connecting point of the same, and the resistor being comprised of a complex termination resistor forming an internal termination impedance and a series connected complex termination resistor and complex termination capacitor being connected directly to the telephone line as an external termination impedance, wherein the frequency characteristics can be improved in three ways.

    摘要翻译： 一种包括差分放大器的用户电路的二线终端阻抗产生电路，其具有包括电容器和电阻器的网络电路，输入点和电流源，所述电容器由串联连接的第一和第二电容器组成，所述电阻器 由串联连接的第一和第二电阻器组成，并具有连接在其中间连接点处的高频带旁路电容器，并且该电阻器由形成内部终端阻抗的复合终端电阻器和串联连接的复合终端电阻器和复合体组成 终端电容器直接连接到电话线作为外部终端阻抗，其中可以三种方式改善频率特性。