公开(公告)号：US08570412B2

公开(公告)日：2013-10-29

申请号：US12603059

申请日：2009-10-21

申请人： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

发明人： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

IPC分类号： H04N5/335

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3532 ,  H04N5/3591 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378

摘要： A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

摘要翻译： 固态图像传感器包括像素阵列以及由阵列中的多个像素共享的电荷 - 电压转换器，复位门和放大器。 复位栅极电源的电压设定为高于放大器电源的电压电平。 此外，从像素中的光电检测器溢出的电荷可能被丢弃到电荷 - 电压转换器中。 图像传感器还可以包括行扫描器，其被配置为使得在扫描像素阵列中的行以从其中读出信号的同时，行扫描器在共享具有像素的电荷到电压转换器的像素的光电检测器中复位电荷 读出行。 在从读出行上的像素读出信号的同时或之前进行电荷复位。

公开(公告)号：US20100097508A1

公开(公告)日：2010-04-22

申请号：US12603059

申请日：2009-10-21

申请人： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

发明人： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

IPC分类号： H04N5/335

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3532 ,  H04N5/3591 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378

摘要： A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

摘要翻译： 固态图像传感器包括像素阵列以及由阵列中的多个像素共享的电荷 - 电压转换器，复位门和放大器。 复位栅极电源的电压设定为高于放大器电源的电压电平。 此外，从像素中的光电检测器溢出的电荷可能被丢弃到电荷 - 电压转换器中。 图像传感器还可以包括行扫描器，其被配置为使得在扫描像素阵列中的行以从其中读出信号的同时，行扫描器在共享具有像素的电荷到电压转换器的像素的光电检测器中复位电荷 读出行。 在从读出行上的像素读出信号的同时或之前进行电荷复位。

公开(公告)号：US06521925B1

公开(公告)日：2003-02-18

申请号：US09537745

申请日：2000-03-30

申请人： Akiko Mori ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroaki Ishiwata ,  Hidetoshi Nozaki

发明人： Akiko Mori ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroaki Ishiwata ,  Hidetoshi Nozaki

IPC分类号： H01L31062

CPC分类号： H01L29/0847 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14654 ,  H01L31/0352

摘要： A solid-state image sensor comprises a photodiode which is provided in a p-type substrate or a p-type well and composed of a first n-type region for storing photoelectrically converted signal charges, a gate electrode provided above the substrate or well so as to be adjacent to one end of the photodiode, and a n-type drain provided at the surface of the substrate or well opposite to the photodiode, with the gate electrode interviewing therebetween. There is provided a second n-type region which is formed so as to be in contact with the upper part of the first n-type region on the gate electrode side and one end of which is formed to self-align with one end of the gate electrode to be part of the photodiode. This construction prevents the short-channel effect of the signal read transistor section and reduces or eradicates the left-over signal charges stored in the photodiode, thereby reducing noise and improving the sensitivity of the sensor.

摘要翻译： 固态图像传感器包括设置在p型衬底或p型阱中并由用于存储光电转换的信号电荷的第一n型区域，设置在衬底或阱上方的栅电极组成的光电二极管， 与光电二极管的一端相邻，以及设置在基板的表面或与光电二极管相对的阱的n型漏极，门电极与其间进行访问。 提供了第二n型区域，其形成为与栅极电极侧上的第一n型区域的上部接触，并且其一端形成为与第一n型区域的一端自对准 栅电极成为光电二极管的一部分。 这种结构防止信号读取晶体管部分的短沟道效应，并且减少或消除存储在光电二极管中的剩余信号电荷，从而降低噪声并提高传感器的灵敏度。

公开(公告)号：US06504193B1

公开(公告)日：2003-01-07

申请号：US09606178

申请日：2000-06-29

申请人： Hiroaki Ishiwata ,  Yoshinori Iida

发明人： Hiroaki Ishiwata ,  Yoshinori Iida

IPC分类号： H01L31062

CPC分类号： H01L27/14609 ,  H01L27/14687

摘要： Part of a photodiode layer extends to a position under a gate electrode. The photodiode layer and a drain layer are separated by a punch-through stopper region. A surface shield layer is formed on the photodiode layer. When a voltage is applied to the gate electrode, the charge accumulated in the photodiode layer is transferred to the drain region via a channel formed under the gate electrode, not being affected by a potential barrier in the surface shield layer.

摘要翻译： 光电二极管层的一部分延伸到栅电极下方的位置。 光电二极管层和漏极层由穿通止挡区域分开。 在光电二极管层上形成表面屏蔽层。 当向栅电极施加电压时，积聚在光电二极管层中的电荷经由形成在栅电极下面的沟道传输到漏区，不受表面屏蔽层中的势垒的影响。

公开(公告)号：US06344666B1

公开(公告)日：2002-02-05

申请号：US09407847

申请日：1999-09-29

申请人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hiroaki Ishiwata ,  Akiko Mori

发明人： Tetsuya Yamaguchi ,  Hisanori Ihara ,  Hiroaki Ishiwata ,  Akiko Mori

IPC分类号： H01L3100

CPC分类号： H01L27/14609 ,  H01L27/14627 ,  H01L27/14645 ,  H01L31/02164

摘要： In an amplifier-type solid-state image sensor device, each unit cell comprises a photoconverter and a signal scanning circuit in an image sensing region on a semiconductor substrate, a metal film has an opening region for defining regions where light is radiated in the photoconverters of the unit cells, and a center position of the opening region of the metal film is displaced to the side of the center of the image sensing region with respect to a center portion of the photoconverter, so that the amount of light entering the center of the semiconductor chip and the peripheral portions of the semiconductor chip can be made equal, thereby obtaining substantially the same sensitivity at the center and peripheral portions of the semiconductor chip.

摘要翻译： 在放大器型固态图像传感器装置中，每个单位单元包括在半导体衬底上的图像感测区域中的光转换器和信号扫描电路，金属膜具有用于限定在光转换器中照射光的区域的开口区域 ，并且金属膜的开口区域的中心位置相对于光转换器的中心部分位移到图像感测区域的中心侧，使得进入光电转换器的中心的光量 可以使半导体芯片和半导体芯片的周边部分相等，从而在半导体芯片的中心和周边部分获得基本上相同的灵敏度。

公开(公告)号：US08809922B2

公开(公告)日：2014-08-19

申请号：US13592538

申请日：2012-08-23

申请人： Hitoshi Moriya ,  Hiroaki Ishiwata ,  Kazuyoshi Yamashita ,  Hiroyuki Mori

发明人： Hitoshi Moriya ,  Hiroaki Ishiwata ,  Kazuyoshi Yamashita ,  Hiroyuki Mori

IPC分类号： H01L31/062

CPC分类号： H01L27/1461 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14645

摘要： Disclosed is a solid-state image sensing device including: a first photoelectric conversion element having a first semiconductor region of a first conductivity type formed inside a semiconductor substrate; a second photoelectric conversion element having a second semiconductor region of a first conductivity type formed at a deeper position of the semiconductor substrate than the first photoelectric conversion element; a gate electrode laminated on the semiconductor substrate and to which a predetermined voltage is applied at a charge transfer time; a floating diffusion region to which the charges accumulated in the first photoelectric conversion element and the second photoelectric conversion element are transferred at the charge transfer time; and a third semiconductor region of a first conductivity type arranged between the first semiconductor region and the second semiconductor region in a depth direction of the semiconductor.

摘要翻译： 公开了一种固态摄像装置，包括：第一光电转换元件，其具有形成在半导体衬底内的第一导电类型的第一半导体区域; 第二光电转换元件，其具有形成在所述半导体衬底的比所述第一光电转换元件更深的位置处的第一导电类型的第二半导体区域; 层叠在所述半导体衬底上并且在电荷转移时间施加了预定电压的栅电极; 在第一光电转换元件和第二光电转换元件中累积的电荷在电荷转移时间被转移到的浮动扩散区域; 以及在半导体的深度方向上布置在第一半导体区域和第二半导体区域之间的第一导电类型的第三半导体区域。

公开(公告)号：US08697477B2

公开(公告)日：2014-04-15

申请号：US13116539

申请日：2011-05-26

申请人： Sanghoon Ha ,  Hiroaki Ishiwata

发明人： Sanghoon Ha ,  Hiroaki Ishiwata

IPC分类号： H01L21/00

CPC分类号： H01L27/14806 ,  H01L27/14616 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/18 ,  Y02E10/50

摘要： Disclosed herein is a method for producing a solid-state imaging element which has pixels, each including a sensor section that performs photoelectric conversion and a charge transfer section that transfers charges generated by the sensor section. The method includes: forming an impurity region of the first conduction type and a second impurity region of the second conduction type on the impurity region of the first conduction type by ion implantation by using the same mask; forming on the surface of the semiconductor substrate a transfer gate constituting the charge transfer section which extends over the second impurity region of the second conduction type; forming a charge accumulating region of the first conduction type constituting the sensor section by ion implantation; and forming a first impurity region of the second conduction type, which has a higher impurity concentration than the second impurity region of the second conduction type, by ion implantation.

摘要翻译： 本发明公开了一种具有像素的固体摄像元件的制造方法，每个像素包括执行光电转换的传感器部分和传送由传感器部分产生的电荷的电荷转移部分。 该方法包括：通过使用相同的掩模通过离子注入在第一导电类型的杂质区上形成第一导电类型的杂质区和第二导电类型的第二杂质区; 在所述半导体衬底的表面上形成构成所述电荷转移部的传输门，所述电荷转移部在所述第二导电类型的所述第二杂质区上延伸; 通过离子注入形成构成传感器部分的第一导电类型的电荷累积区域; 并且通过离子注入形成具有比第二导电类型的第二杂质区更高的杂质浓度的第二导电类型的第一杂质区。

公开(公告)号：US08288770B2

公开(公告)日：2012-10-16

申请号：US12647173

申请日：2009-12-24

申请人： Hideo Kido ,  Hiroaki Ishiwata

发明人： Hideo Kido ,  Hiroaki Ishiwata

IPC分类号： H01L31/0203

CPC分类号： H01L27/14623 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14641

摘要： A solid-state imaging device is disclosed. In the solid-state imaging device, plural unit areas, each having a photoelectric conversion region converting incident light into electric signals are provided adjacently, in which each photoelectric conversion region is provided being deviated from the central position of each unit area to a boundary position between the plural unit areas, a high refractive index material layer is arranged over the deviated photoelectric conversion region, and a low refractive index material layer is provided over the photoelectric conversion regions at the inverse side of the deviated direction being adjacent to the high refractive index material layer, and optical paths of the incident light are changed by the high refractive index material layer and the low refractive index material layer, and the incident light enters the photoelectric conversion region.

摘要翻译： 公开了一种固态成像装置。 在固态成像装置中，相邻地设置将具有将入射光转换成电信号的光电转换区域的多个单位区域，其中设置每个光电转换区域从每个单位区域的中心位置偏离到边界位置 在多个单位区域之间，偏转光电转换区域上设置高折射率材料层，并且在与高折射率相邻的偏离方向的相反侧的光电转换区域上设置低折射率材料层 材料层和入射光的光路由高折射率材料层和低折射率材料层改变，并且入射光进入光电转换区域。

公开(公告)号：US08134620B2

公开(公告)日：2012-03-13

申请号：US12440064

申请日：2007-08-02

申请人： Hiroaki Ishiwata

发明人： Hiroaki Ishiwata

IPC分类号： H04N3/14

CPC分类号： H01L27/14603 ,  H01L27/14605 ,  H04N5/217 ,  H04N5/2254

摘要： A solid-state image device including a pixel-array section forming an image pick-up region and a wiring layer including wiring lines and contact units. In one embodiment, each of the contact units and wiring lines is provided for a respective pixel in the pixel-array section, and the image-pickup region is divided into a first region and a second region with respect to a central portion of the image-pickup region. Further, positions of contact units and wiring lines arranged in the first region are opposite to positions of corresponding contact units and wiring lines arranged in the second region.

摘要翻译： 一种固态图像装置，包括形成摄像区域的像素阵列部分和包括布线和接触单元的布线层。 在一个实施例中，每个接触单元和布线被设置用于像素阵列部分中的相应像素，并且图像拾取区域相对于图像的中心部分分成第一区域和第二区域 皮克区域。 此外，布置在第一区域中的接触单元和布线的位置与布置在第二区域中的相应的接触单元和布线的位置相反。

公开(公告)号：US11343451B2

公开(公告)日：2022-05-24

申请号：US16849843

申请日：2020-04-15

申请人： Hiroaki Ishiwata ,  Hideo Kido ,  Norihiro Kubo ,  Tetsuya Uchida

发明人： Hiroaki Ishiwata ,  Hideo Kido ,  Norihiro Kubo ,  Tetsuya Uchida

IPC分类号： H04N5/369 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/347

摘要： A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.