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公开(公告)号：US06521925B1
公开(公告)日：2003-02-18
申请号：US09537745
申请日：2000-03-30
IPC分类号： H01L31062
CPC分类号： H01L29/0847 , H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L27/14654 , H01L31/0352
摘要： A solid-state image sensor comprises a photodiode which is provided in a p-type substrate or a p-type well and composed of a first n-type region for storing photoelectrically converted signal charges, a gate electrode provided above the substrate or well so as to be adjacent to one end of the photodiode, and a n-type drain provided at the surface of the substrate or well opposite to the photodiode, with the gate electrode interviewing therebetween. There is provided a second n-type region which is formed so as to be in contact with the upper part of the first n-type region on the gate electrode side and one end of which is formed to self-align with one end of the gate electrode to be part of the photodiode. This construction prevents the short-channel effect of the signal read transistor section and reduces or eradicates the left-over signal charges stored in the photodiode, thereby reducing noise and improving the sensitivity of the sensor.
摘要翻译： 固态图像传感器包括设置在p型衬底或p型阱中并由用于存储光电转换的信号电荷的第一n型区域，设置在衬底或阱上方的栅电极组成的光电二极管， 与光电二极管的一端相邻，以及设置在基板的表面或与光电二极管相对的阱的n型漏极，门电极与其间进行访问。 提供了第二n型区域，其形成为与栅极电极侧上的第一n型区域的上部接触，并且其一端形成为与第一n型区域的一端自对准 栅电极成为光电二极管的一部分。 这种结构防止信号读取晶体管部分的短沟道效应，并且减少或消除存储在光电二极管中的剩余信号电荷，从而降低噪声并提高传感器的灵敏度。
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公开(公告)号：US06344666B1
公开(公告)日：2002-02-05
申请号：US09407847
申请日：1999-09-29
IPC分类号： H01L3100
CPC分类号： H01L27/14609 , H01L27/14627 , H01L27/14645 , H01L31/02164
摘要： In an amplifier-type solid-state image sensor device, each unit cell comprises a photoconverter and a signal scanning circuit in an image sensing region on a semiconductor substrate, a metal film has an opening region for defining regions where light is radiated in the photoconverters of the unit cells, and a center position of the opening region of the metal film is displaced to the side of the center of the image sensing region with respect to a center portion of the photoconverter, so that the amount of light entering the center of the semiconductor chip and the peripheral portions of the semiconductor chip can be made equal, thereby obtaining substantially the same sensitivity at the center and peripheral portions of the semiconductor chip.
摘要翻译： 在放大器型固态图像传感器装置中，每个单位单元包括在半导体衬底上的图像感测区域中的光转换器和信号扫描电路，金属膜具有用于限定在光转换器中照射光的区域的开口区域 ，并且金属膜的开口区域的中心位置相对于光转换器的中心部分位移到图像感测区域的中心侧，使得进入光电转换器的中心的光量 可以使半导体芯片和半导体芯片的周边部分相等，从而在半导体芯片的中心和周边部分获得基本上相同的灵敏度。
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3.发明授权Solid-state image sensor having a substrate with an impurity concentration gradient 有权具有杂质浓度梯度的衬底的固态图像传感器公开(公告)号：US06441411B2
公开(公告)日：2002-08-27
申请号：US09728123
申请日：2000-12-04
IPC分类号： H01L27146
CPC分类号： H01L27/14643
摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.
摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。
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公开(公告)号：US06194244B1
公开(公告)日：2001-02-27
申请号：US09109061
申请日：1998-07-02
IPC分类号： H01L2100
CPC分类号： H01L27/14601 , H01L27/14689
摘要： The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least twice ion implantation.
摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上的各个隔离有源区域内的多个光电转换部分，其中包括多个光电转换部分的单元电池和信号扫描电路的图像区域布置在 二维阵列形式和用于从图像拾取区域内的相应单位单元读取信号的信号线，其中各个光电转换部分通过至少两次离子注入形成。
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公开(公告)号：US6072206A
公开(公告)日：2000-06-06
申请号：US272339
申请日：1999-03-19
IPC分类号： H01L27/146 , H01L31/0352 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/374 , H04N5/3745 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14643 , H01L31/03529 , Y02E10/50
摘要： The present invention provides a solid state image sensor constructed in such a manner that, even if the impurity concentration of the wells of a transistors is increased, the junction leakage current does not increase, and thus, the picture quality of the reproduced picture is not deteriorated. On a p-type substrate, there are formed a first p-type well for a photoelectric conversion portion comprising a photodiode, and a second p-type well for a signal scanning circuit portion. In the surface portions of the first and second p-type wells, a first and a second n-type diffused layers are formed, respectively. The drain of a reset transistor and the drain of an amplifying transistor which constitute the second n-type diffused layer are connected to a power supply line. Further, the source of an address transistor which is an n-type diffused layer is connected to a vertical signal line. The gates of the amplifying transistor and the address transistor are formed between second n-type diffused layers disposed at predetermined intervals on the surface of the second p-type well.
摘要翻译： 本发明提供了一种固态图像传感器，其构造方式是，即使晶体管的阱的杂质浓度增加，结漏电流也不增加，因此再现图像的图像质量不是 恶化 在p型衬底上形成有用于光电转换部分的第一p型阱以及用于信号扫描电路部分的第二p型阱。 在第一和第二p型阱的表面部分分别形成第一和第二n型扩散层。 构成第二n型扩散层的复位晶体管的漏极和放大晶体管的漏极连接到电源线。 此外，作为n型扩散层的地址晶体管的源极连接到垂直信号线。 放大晶体管和地址晶体管的栅极形成在第二p型阱的表面上以预定间隔设置的第二n型扩散层之间。
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6.发明授权Solid-state image sensor having a substrate with an impurity concentration gradient 失效具有杂质浓度梯度的衬底的固态图像传感器公开(公告)号：US06271554B1
公开(公告)日：2001-08-07
申请号：US09110074
申请日：1998-07-02
IPC分类号： H01L27146
CPC分类号： H01L27/14643
摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.
摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。
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公开(公告)号：US5527417A
公开(公告)日：1996-06-18
申请号：US446290
申请日：1995-05-22
申请人： Yoshinori Iida , Akihiko Furukawa , Tetsuya Yamaguchi , Michio Sasaki , Hisanori Ihara , Hidetoshi Nozaki , Takaaki Kamimura
发明人： Yoshinori Iida , Akihiko Furukawa , Tetsuya Yamaguchi , Michio Sasaki , Hisanori Ihara , Hidetoshi Nozaki , Takaaki Kamimura
IPC分类号： H01L21/205 , C23C16/44 , C23C16/48 , C23F1/02
CPC分类号： C23C16/4405 , C23C16/482 , C23C16/488
摘要： A photo-assisted CVD apparatus including a reaction chamber for storing a substrate, an inlet port for feeding a source gas into the reaction chamber, a light source for radiating light on the source gas fed into the reaction chamber to decompose the source gas upon radiating the light, thereby depositing a film on the substrate, an inlet port for supplying an etching gas into the reaction chamber, and a discharge electrode, arranged above the substrate and having a configuration, surrounding a space above the substrate, for exciting the etching gas.
摘要翻译： 一种光辅助CVD装置，包括用于存储基板的反应室，用于将源气体供给到反应室中的入口端口，用于在进入反应室的源气体上照射光的光源，以在辐射时分解源气体 由此在基板上沉积膜，将用于向反应室供给蚀刻气体的入口端口和放电电极，该放电电极布置在基板上方并且具有围绕基板上方的空间的激励蚀刻气体 。
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公开(公告)号：US07224003B2
公开(公告)日：2007-05-29
申请号：US11387819
申请日：2006-03-24
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H01L31/0328
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。
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公开(公告)号：US07042061B2
公开(公告)日：2006-05-09
申请号：US10727515
申请日：2003-12-05
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H01L31/06 , H01L27/148
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。
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公开(公告)号：US06690423B1
公开(公告)日：2004-02-10
申请号：US09272337
申请日：1999-03-19
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H04N314
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态摄像装置包括具有表面的p型硅衬底，在其上形成用于构成光电转换区域的p +扩散层和读取MOS场效应晶体管的漏极。 由p +扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在p +扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p +扩散层的读取栅电极的末端延伸到栅电极下方的位置。
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