公开(公告)号：US07163871B2

公开(公告)日：2007-01-16

申请号：US10763244

申请日：2004-01-26

申请人： Taishi Kubota ,  Yoshihiro Kitamura ,  Takuo Ohashi ,  Susumu Sakurai ,  Takayuki Kanda ,  Shinichi Horibe

发明人： Taishi Kubota ,  Yoshihiro Kitamura ,  Takuo Ohashi ,  Susumu Sakurai ,  Takayuki Kanda ,  Shinichi Horibe

IPC分类号： H01L21/76

CPC分类号： H01L21/76232

摘要： A manufacturing method of a semiconductor device having a trench is provided to form, at a corner portion of the trench, an oxide film which is greater in thickness and smaller in stress than at other portions. When the trench formed in the semiconductor substrate is oxidized, it is oxidized in an oxygen environment containing dichloroethylene at a predetermined weight percent to allow the formation of an oxide film having a greater thickness at the corner portion of the trench than thickness at other portions, whereby the semiconductor device improving dielectric breakdown characteristics can be obtained.

摘要翻译： 提供具有沟槽的半导体器件的制造方法，以在沟槽的角部形成厚度大于应力的氧化膜，其压力小于其它部分。 当在半导体衬底中形成的沟槽被氧化时，其在含有二氯乙烯的氧环境中以预定的重量百分数被氧化，以允许在沟槽的角部比其它部分的厚度形成厚度更大的氧化膜， 从而可以获得提高绝缘击穿特性的半导体器件。

公开(公告)号：US20050215026A1

公开(公告)日：2005-09-29

申请号：US11087585

申请日：2005-03-24

申请人： Takuo Ohashi ,  Taishi Kubota ,  Susumu Sakurai ,  Takayuki Kanda

发明人： Takuo Ohashi ,  Taishi Kubota ,  Susumu Sakurai ,  Takayuki Kanda

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L21/76224 ,  H01L21/823481

摘要： With respect to nitriding of an oxide film on an inner wall of a trench, a method for producing a semiconductor device is provided, the method preventing the characteristic deterioration of the semiconductor device by controlling and optimizing peak nitrogen concentration in an oxide film to reduce the stress and to suppress the threshold voltage shift due to the positive charge of nitrogen.

摘要翻译： 关于在沟槽的内壁上的氧化膜的氮化，提供了一种半导体器件的制造方法，该方法通过控制和优化氧化物膜中的氮浓度来降低半导体器件的特性劣化，从而减少 应力并抑制由氮的正电荷引起的阈值电压偏移。

公开(公告)号：US20050003618A1

公开(公告)日：2005-01-06

申请号：US10843694

申请日：2004-05-12

申请人： Takayuki Kanda

发明人： Takayuki Kanda

IPC分类号： H01L21/8234 ,  H01L21/8244 ,  H01L27/088 ,  H01L27/10 ,  H01L27/11 ,  H01L21/336

CPC分类号： H01L21/823462

摘要： After a first gate oxide film (302) is formed on a substrate (301), a nitride layer (303) is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate oxide film forming process forms a second gate oxide film (305A) in the thinner film part area and a third gate oxide film (305B) in a thicker film part area. By executing second oxynitriding process, nitride layers (306A and 306B) are formed at the thinner and the thicker part areas.

摘要翻译： 在基板（301）上形成第一栅氧化膜（302）之后，通过第一次氮氧化处理形成氮化物层（303）。 从衬底的薄膜部分区域中选择性地去除第一栅氧化膜。 第二栅极氧化膜形成工艺在较薄的膜部分区域中形成第二栅极氧化膜（305A），在较厚的膜部分区域形成第三栅极氧化膜（305B）。 通过执行第二氧氮化处理，在较薄和较厚的部分区域形成氮化物层（306A和306B）。

公开(公告)号：US06713353B1

公开(公告)日：2004-03-30

申请号：US09536756

申请日：2000-03-28

申请人： Takayuki Kanda ,  Atsushi Hiraiwa ,  Norio Suzuki ,  Satoshi Sakai ,  Shuji Ikeda ,  Yasuko Yoshida ,  Shinichi Horibe

发明人： Takayuki Kanda ,  Atsushi Hiraiwa ,  Norio Suzuki ,  Satoshi Sakai ,  Shuji Ikeda ,  Yasuko Yoshida ,  Shinichi Horibe

IPC分类号： H01L218234

CPC分类号： H01L21/823878 ,  H01L21/823857

摘要： A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.

公开(公告)号：US07737048B2

公开(公告)日：2010-06-15

申请号：US11514934

申请日：2006-09-05

申请人： Takayuki Kanda

发明人： Takayuki Kanda

IPC分类号： H01L21/31

CPC分类号： H01L22/20 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L22/12

摘要： A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.

摘要翻译： 形成氧化膜的方法包括在环境气体中使用1％-H2浓度的第一原位蒸汽产生（ISSG）方法和在环境气体中使用5％-H 2浓度的随后的第二ISSG方法，其中 第二ISSG过程补偿由第一ISSG工艺形成的膜的面内厚度分布。 第一和第二ISSG步骤的时间长度是基于期望的膜厚度，由第二ISSG工艺形成的膜的时间长度依赖性以及第一和第二ISSG工艺的氧化速率来确定的。

公开(公告)号：US20070054423A1

公开(公告)日：2007-03-08

申请号：US11514934

申请日：2006-09-05

申请人： Takayuki Kanda

发明人： Takayuki Kanda

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L22/12

摘要： A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.

摘要翻译： 形成氧化膜的方法包括在环境气体中使用1％-H 2 O 2浓度的第一原位蒸汽产生（ISSG）方法和使用5％-H 环境气体中的2 浓度，其中第二ISSG过程补偿由第一ISSG工艺形成的膜的面内厚度分布。 第一和第二ISSG步骤的时间长度是基于期望的膜厚度，由第二ISSG工艺形成的膜的时间长度依赖性以及第一和第二ISSG工艺的氧化速率来确定的。

公开(公告)号：US06604021B2

公开(公告)日：2003-08-05

申请号：US09886668

申请日：2001-06-21

申请人： Michita Imai ,  Hiroshi Ishiguro ,  Tesuo Ono ,  Takeshi Maeda ,  Takayuki Kanda

发明人： Michita Imai ,  Hiroshi Ishiguro ,  Tesuo Ono ,  Takeshi Maeda ,  Takayuki Kanda

IPC分类号： G06F1900

CPC分类号： G06N3/008 ,  G06F19/00

摘要： A communication robot includes a speaker. By generating a sound or voice through the speaker, the human is requested to cause a robot to make a certain action. When the human makes an action to the robot, the movement of the robot head or arm assists for the action.

摘要翻译： 通信机器人包括扬声器。 通过扬声器产生声音或声音，请人们使机器人做出一定的动作。 当人类对机器人采取行动时，机器人头部或手臂的运动有助于行动。

公开(公告)号：US20060125029A1

公开(公告)日：2006-06-15

申请号：US11291068

申请日：2005-12-01

申请人： Takayuki Kanda

发明人： Takayuki Kanda

IPC分类号： H01L29/94 ,  H01L21/8238

CPC分类号： H01L21/823462

摘要： After a first gate oxide film is formed on a substrate, a nitride layer is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate oxide film forming process forms a second gate oxide film in the thinner film part area and a third gate oxide film in a thicker film part area. By executing second oxynitriding process, nitride layers are formed at the thinner and the thicker part areas.

摘要翻译： 在基板上形成第一栅极氧化膜之后，通过第一次氮氧化处理形成氮化物层。 从衬底的薄膜部分区域中选择性地去除第一栅氧化膜。 第二栅极氧化膜形成工艺在较薄的膜部分区域中形成第二栅极氧化膜，并且在较厚的膜部分区域中形成第三栅极氧化物膜。 通过进行第二次氮氧化处理，在较薄的部分区域形成氮化物层。

公开(公告)号：US20050009072A1

公开(公告)日：2005-01-13

申请号：US10854327

申请日：2004-05-27

申请人： Koshi Maeda ,  Shinichi Fukuzono ,  Takayuki Kanda ,  Kokichi Sugano

发明人： Koshi Maeda ,  Shinichi Fukuzono ,  Takayuki Kanda ,  Kokichi Sugano

IPC分类号： G01N33/574 ,  C07H21/04 ,  C12N15/09 ,  C12Q1/68

CPC分类号： C07H21/04 ,  C12Q1/6886 ,  C12Q2600/156

摘要： A deletion in the end region of the long arm of a Chromosome 9 is efficiently detected. A genetic testing kit of bladder cancer according to the present invention includes a primer allowing for efficient amplification of a region containing a site of genetic polymorphism present in the ABO blood group genes of Chromosome 9. In the site of genetic polymorphism present in the ABO blood group genes, the frequency of heterozygote (heterozygosity) in the population is extremely high. Therefore, by detecting LOH using a polymorphic site present in the ABO blood group genes, it is possible to reliably detect a deletion near the polymorphic site, in other words, a deletion near the end of the long arm of Chromosome 9.

摘要翻译： 有效地检测染色体9的长臂的末端区域的缺失。 根据本发明的膀胱癌的遗传检测试剂盒包括允许有效扩增含有染色体9的ABO血型基因中存在的遗传多态性位点的区域的引物。在存在于ABO血液中的遗传多态性位点 群体基因，杂种（杂合性）在群体中的频率极高。 因此，通过使用存在于ABO血型基因中的多态性位点检测LOH，可以可靠地检测多态性位点附近的缺失，换句话说，在染色体9的长臂末端附近的缺失。

公开(公告)号：US07592137B2

公开(公告)日：2009-09-22

申请号：US10854327

申请日：2004-05-27

申请人： Koshi Maeda ,  Shinichi Fukuzono ,  Takayuki Kanda ,  Kokichi Sugano

发明人： Koshi Maeda ,  Shinichi Fukuzono ,  Takayuki Kanda ,  Kokichi Sugano

IPC分类号： C07H21/04 ,  C12Q1/68

CPC分类号： C07H21/04 ,  C12Q1/6886 ,  C12Q2600/156

摘要： A deletion in the end region of the long arm of a Chromosome 9 is efficiently detected.A genetic testing kit of bladder cancer according to the present invention includes a primer allowing for efficient amplification of a region containing a site of genetic polymorphism present in the ABO blood group gene of Chromosome 9. In the site of genetic polymorphism present in the ABO blood group gene, the frequency of heterozygote (heterozygosity) in the population is extremely high. Therefore, by detecting LOH using a polymorphic site present in the ABO blood group gene, it is possible to reliably detect a deletion near the polymorphic site, in other words, a deletion near the end of the long arm of Chromosome 9.

摘要翻译： 有效地检测染色体9的长臂的末端区域的缺失。 根据本发明的膀胱癌的遗传检测试剂盒包括允许有效扩增含有染色体9的ABO血型基因中存在的遗传多态性位点的区域的引物。在存在于ABO血液中的遗传多态性位点 群体基因，种群中杂合子（杂合性）的频率极高。 因此，通过使用ABO血型基因中存在的多态性位点检测LOH，可以可靠地检测多态性位点附近的缺失，换句话说，在染色体9的长臂末端附近的缺失。