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公开(公告)号：US09095901B2
公开(公告)日：2015-08-04
申请号：US14328016
申请日：2014-07-10
发明人： Takanobu Miyashita , Yasuyuki Goto , Takamichi Yamamoto , Ryousuke Kushibiki , Masahiro Aono , Masahiro Nishiura
IPC分类号： C23C14/34 , B22F3/12 , B22F9/08 , C22C1/05 , C22C5/04 , C22C32/00 , G11B5/851 , B22F9/04 , C22C1/04 , C22C1/10 , H01J37/34 , C23C14/06 , C22C38/00 , C22C38/16
CPC分类号： B22F3/12 , B22F9/04 , B22F9/08 , B22F9/082 , B22F2201/03 , B22F2999/00 , C22C1/0466 , C22C1/05 , C22C1/10 , C22C5/04 , C22C32/00 , C22C38/002 , C22C38/16 , C23C14/0635 , C23C14/34 , C23C14/3414 , G11B5/851 , H01J37/3429 , H01J37/3491 , H01J2237/3322 , H01J2237/3323
摘要： An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target.
摘要翻译： 基于FePt的溅射靶具有FePt基合金相，含有不可避免的杂质的C相和含有不可避免的杂质的金属氧化物相相互分散的结构，含有Pt量的FePt系合金相40 ％以上且60原子％以下，余量为Fe和不可避免的杂质，其中C的含量相对于靶的总量大于0体积％和20体积％以下，金属氧化物 的含量相对于靶的总量为10体积％以上且小于40体积％，C和金属氧化物的总含量为20体积％以上且40体积％以下，基于 目标的总量。
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公开(公告)号：US20210242000A1
公开(公告)日：2021-08-05
申请号：US17050718
申请日：2019-07-25
发明人： Tomonari Kamada , Ryousuke Kushibiki , Kim Kong Tham , Shin Saito
摘要： For a further high capacity, provided is a sputtering target for a magnetic recording medium that can form a magnetic thin film having enhanced uniaxial magnetic anisotropy, reduced intergranular exchange coupling, and improved thermal stability and SNR (signal-to-noise ratio).
The sputtering target for a magnetic recording medium, comprises: a metal phase containing Pt and at least one or more selected from Cu and Ni, with the balance being Co and incidental impurities; and an oxide phase containing at least B2O3.-
公开(公告)号：US09358612B2
公开(公告)日：2016-06-07
申请号：US14330775
申请日：2014-07-14
发明人： Takanobu Miyashita , Yasuyuki Goto , Takamichi Yamamoto , Ryousuke Kushibiki , Masahiro Aono , Masahiro Nishiura
IPC分类号： C23C14/24 , B22F3/12 , B22F9/08 , C23C14/34 , C22C1/05 , C22C5/04 , C22C32/00 , G11B5/851 , B22F9/04 , C22C1/04 , C22C1/10 , H01J37/34 , C23C14/06 , C22C38/00 , C22C38/16
CPC分类号： B22F3/12 , B22F9/04 , B22F9/08 , B22F9/082 , B22F2201/03 , B22F2999/00 , C22C1/0466 , C22C1/05 , C22C1/10 , C22C5/04 , C22C32/00 , C22C38/002 , C22C38/16 , C23C14/0635 , C23C14/34 , C23C14/3414 , G11B5/851 , H01J37/3429 , H01J37/3491 , H01J2237/3322 , H01J2237/3323
摘要： An FePt-based sputtering target contains Fe, Pt, and a metal oxide, and further contains one or more kinds of metal elements other than Fe and Pt, wherein the FePt-based sputtering target has a structure in which an FePt-based alloy phase and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and less than 60 at % and the one or more kinds of metal elements in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with the total amount of Pt and the one or more kinds of metal elements being 60 at % or less, and wherein the metal oxide is contained in an amount of 20 vol % or more and 40 vol % or less based on the total amount of the target.
摘要翻译： FePt系溅射靶包含Fe，Pt和金属氧化物，并且还含有除Fe和Pt以外的一种以上的金属元素，其中，FePt系溅射靶具有FePt系合金相 含有不可避免的杂质的金属氧化物相相互分散，含有40at％以上且小于60at％的Pt的FePt系合金相和超过一个以上的金属元素 0原子％和20原子％以下，余量为Fe和不可避免的杂质，Pt的总量和一种或多种金属元素的含量为60原子％以下，其中金属氧化物的含量 为20体积％以上且40体积％以下。
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公开(公告)号：US20230203639A1
公开(公告)日：2023-06-29
申请号：US17926571
申请日：2021-05-17
CPC分类号： C23C14/08 , C23C14/3407 , G11B5/851 , G11B5/66
摘要： Provided is a magnetic recording medium having a large magnetocrystalline anisotropy constant Ku and a high coercivity Hc as well as a sputtering target used for producing such a magnetic recording medium.
A Pt-oxide-based sputtering target consists of 60 vol % or more and less than 100 vol % of a Pt-base alloy phase and more than 0 vol % and 40 vol % or less of an oxide, where the Pt-base alloy phase contains 50 at % or more and 100 at % or less of Pt.-
公开(公告)号：US09314845B2
公开(公告)日：2016-04-19
申请号：US14328106
申请日：2014-07-10
发明人： Takanobu Miyashita , Yasuyuki Goto , Takamichi Yamamoto , Ryousuke Kushibiki , Masahiro Aono , Masahiro Nishiura
IPC分类号： C23C14/24 , B22F3/12 , B22F9/08 , C23C14/34 , C22C1/05 , C22C5/04 , C22C32/00 , G11B5/851 , B22F9/04 , C22C1/04 , C22C1/10 , H01J37/34 , C23C14/06 , C22C38/00 , C22C38/16
CPC分类号： B22F3/12 , B22F9/04 , B22F9/08 , B22F9/082 , B22F2201/03 , B22F2999/00 , C22C1/0466 , C22C1/05 , C22C1/10 , C22C5/04 , C22C32/00 , C22C38/002 , C22C38/16 , C23C14/0635 , C23C14/34 , C23C14/3414 , G11B5/851 , H01J37/3429 , H01J37/3491 , H01J2237/3322 , H01J2237/3323
摘要： A process for producing an FePt-based sputtering target includes adding C powder containing unavoidable impurities and metal oxide powder containing unavoidable impurities to FePt-based alloy powder containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities so that the C powder and the metal oxide powder are contained to satisfy: 0
摘要翻译： 制造FePt系溅射靶的方法包括将含有不可避免的杂质的C粉末和含有不可避免的杂质的金属氧化物粉末添加至含有40质量％以上且60原子％以下的Pt的FePt系合金粉末，余量 是Fe和不可避免的杂质，因此含有C粉末和金属氧化物粉末以满足：0 <α＆nlE; 20; 10＆nlE;＆bgr; <40; 和20＆nlE;α+＆bgr;＆nlE; 40，其中α和＆bgr; 基于FePt系合金粉末，C粉末和金属氧化物粉末的总量，分别以体积％表示C粉末和金属氧化物粉末的含量，然后将FePt系合金粉末， C粉末和金属氧化物粉末以产生粉末混合物。
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公开(公告)号：US11810700B2
公开(公告)日：2023-11-07
申请号：US17289500
申请日：2019-10-30
CPC分类号： H01F10/16 , C23C14/3407 , H01F41/18
摘要： A CoPt-oxide-based in-plane magnetized film having a magnetic coercive force of 2.00 kOe or more and remanent magnetization per unit area Mrt of 2.00 memu/cm2 or more. The in-plane magnetized film for use as a hard bias layer of a magnetoresistive element contains metal Co, metal Pt, and an oxide. The in-plane magnetized film contains the metal Co in an amount of 55 at % or more and less than 95 at % and the metal Pt in an amount of more than 5 at % and 45 at % or less relative to a total of metal components of the in-plane magnetized film, and contains the oxide in an amount of 10 vol % or more and 42 vol % or less relative to a whole amount of the in-plane magnetized film. The in-plane magnetized film has a thickness of 20 nm or more and 80 nm or less.
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公开(公告)号：US20220383901A1
公开(公告)日：2022-12-01
申请号：US17773526
申请日：2020-10-27
发明人： Kim Kong Tham , Ryousuke Kushibiki , Shin Saito , Takashi Saito
摘要： Provided is a sputtering target to be used for forming a granular magnetic thin film in which FePt magnetic grains are isolated by an oxide and which constitutes a heat-assisted magnetic recording medium having enhanced uniaxial magnetic anisotropy, thermal stability, and SNR (signal-to-noise ratio).
The sputtering target for a heat-assisted magnetic recording medium contains an FePt alloy and a nonmagnetic material as main components, where the nonmagnetic material is an oxide having a melting point of 800° C. or higher and 1100° C. or lower.-
公开(公告)号：US10971181B2
公开(公告)日：2021-04-06
申请号：US16346073
申请日：2017-10-11
摘要： A sputtering target for magnetic recording media capable of producing a magnetic thin film in which the magnetic crystal grains are micronized and the distance between the centers of the grains is reduced while good magnetic properties are maintained. The target including metallic Pt and an oxide, with the balance being metallic Co and inevitable impurities, wherein the Co is contained in a range of 70 at % to 90 at % and the Pt is contained in a range of 10 at % to 30 at % relative to a total of metallic components in the sputtering target for magnetic recording media, the oxide is contained in a range of 26 vol % to 40 vol % relative to a total volume of the sputtering target for magnetic recording media, and the oxide is composed of B2O3 and one or more high-melting-point oxides having a melting point of 1470° C. or higher and 2800° C. or lower.
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公开(公告)号：US09314846B2
公开(公告)日：2016-04-19
申请号：US14330786
申请日：2014-07-14
发明人： Takanobu Miyashita , Yasuyuki Goto , Takamichi Yamamoto , Ryousuke Kushibiki , Masahiro Aono , Masahiro Nishiura
IPC分类号： B22F3/12 , B22F9/08 , C23C14/34 , C22C1/05 , C22C5/04 , C22C32/00 , G11B5/851 , B22F9/04 , C22C1/04 , C22C1/10 , H01J37/34 , C23C14/06 , C22C38/00 , C22C38/16
CPC分类号： B22F3/12 , B22F9/04 , B22F9/08 , B22F9/082 , B22F2201/03 , B22F2999/00 , C22C1/0466 , C22C1/05 , C22C1/10 , C22C5/04 , C22C32/00 , C22C38/002 , C22C38/16 , C23C14/0635 , C23C14/34 , C23C14/3414 , G11B5/851 , H01J37/3429 , H01J37/3491 , H01J2237/3322 , H01J2237/3323
摘要： A process for producing an FePt-based sputtering target includes adding metal oxide powder containing unavoidable impurities to FePt-based alloy powder containing Pt in an amount of 40 at % or more and less than 60 at % and one or more kinds of metal elements other than Fe and Pt in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with a total amount of Pt and the one or more kinds of metal elements being 60 at % or less so that the metal oxide powder accounts for 20 vol % or more and 40 vol % or less of a total amount of the FePt-based alloy powder and the metal oxide powder, followed by mixing the FePt-based alloy powder and the metal oxide powder to produce a powder mixture.
摘要翻译： 一种FePt系溅射靶的制造方法，其特征在于，在含有40质量％以上且小于等于60原子％的Pt的FePt系合金粉末中添加含有不可避免的杂质的金属氧化物粉末和其他金属元素 比Fe和Pt大于0at％和20at％或更少，余量为Fe和不可避免的杂质，并且Pt的总量和一种或多种金属元素的含量为60原子％以下，Fe 金属氧化物粉末占FePt系合金粉末和金属氧化物粉末总量的20体积％以上且40体积％以下，然后将FePt系合金粉末和金属氧化物粉末混合到 产生粉末混合物。
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公开(公告)号：US20210269911A1
公开(公告)日：2021-09-02
申请号：US17319375
申请日：2021-05-13
IPC分类号： C23C14/34 , C22C19/07 , G11B5/851 , C22C5/04 , C22C1/10 , C23C14/06 , H01J37/34 , C04B35/01 , C23C14/18
摘要： Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc.
The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide is B2O3 and the sputtering target comprises 10 to 50 vol % of the oxide.
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