公开(公告)号：US07061021B2

公开(公告)日：2006-06-13

申请号：US10837862

申请日：2004-05-03

申请人： Tangali S. Sudarshan ,  Stanislav Soloviev ,  Ying Gao

发明人： Tangali S. Sudarshan ,  Stanislav Soloviev ,  Ying Gao

IPC分类号： H01L31/0312

CPC分类号： H01L21/0455 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/861 ,  Y10S438/931

摘要： This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating SiC diodes having linearly graded, deep pn junctions. One method that this invention uses to achieve its advantages is by diffusing an acceptor impurity into a substrate using a crucible, acceptor source, substrate, and furnace.

摘要翻译： 本发明涉及通过将受主杂质扩散到衬底中来制造PN和PiN二极管的系统和方法。 本发明特别有利于制造具有线性渐变，深pn结的SiC二极管。 本发明用于实现其优点的一种方法是使用坩埚，受体源，基底和炉子将受主杂质扩散到基底中。

公开(公告)号：US20050184296A1

公开(公告)日：2005-08-25

申请号：US11111602

申请日：2005-04-21

申请人： T.S. Sudarshan ,  Stanislav Soloviev ,  Ying Gao

发明人： T.S. Sudarshan ,  Stanislav Soloviev ,  Ying Gao

IPC分类号： H01L20060101 ,  H01L29/15 ,  H01L29/22 ,  H01L29/24 ,  H01L31/0312 ,  H01L31/105

CPC分类号： H01L21/0455 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/861 ,  Y10S438/931

摘要： This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating SiC diodes having linearly graded, deep pn junctions. One method that this invention uses to achieve its advantages is by diffusing an acceptor impurity into a substrate using a crucible, acceptor source, substrate, and furnace.

摘要翻译： 本发明涉及通过将受主杂质扩散到衬底中来制造PN和PiN二极管的系统和方法。 本发明特别有利于制造具有线性渐变，深pn结的SiC二极管。 本发明用于实现其优点的一种方法是使用坩埚，受体源，基底和炉子将受主杂质扩散到基底中。

公开(公告)号：US20070224784A1

公开(公告)日：2007-09-27

申请号：US11386128

申请日：2006-03-22

申请人： Stanislav Soloviev ,  Larry Rowland ,  Stephen Arthur

发明人： Stanislav Soloviev ,  Larry Rowland ,  Stephen Arthur

IPC分类号： H01L21/20

CPC分类号： H01L21/02647 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02447 ,  H01L21/02488 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/02639 ,  H01L21/02642

摘要： A semiconductor material having an epitaxial layer formed thereon and methods of forming an epitaxial layer on a semiconductor material are provided. The method includes disposing a masking layer and patterning the masking layer to form openings and growing an epitaxial layer through the openings and over the masking layer where the epitaxial layer is coalescent.

摘要翻译： 提供其上形成有外延层的半导体材料和在半导体材料上形成外延层的方法。 该方法包括设置掩模层并图案化掩模层以形成开口并且通过开口以及在外延层聚结的掩模层上方生长外延层。