公开(公告)号：US20120101621A1

公开(公告)日：2012-04-26

申请号：US13338722

申请日：2011-12-28

申请人： Tatehito USUI ,  Kazuhiro Joo ,  Takashi Fujii

发明人： Tatehito USUI ,  Kazuhiro Joo ,  Takashi Fujii

IPC分类号： G06F19/00

CPC分类号： G01B11/0625 ,  H01J37/32935 ,  H01J37/32972

摘要： A plasma processing apparatus includes a detector for detecting interference light of multiple wavelengths from a surface of a sample during processing, a pattern comparator for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, a deviation comparator for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, a recorder for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit.

摘要翻译： 等离子体处理装置包括：检测器，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较器，用于比较在处理期间获得的干涉光上的实际偏差图案数据与多个标准偏差图案 对应于膜的两个或更多个厚度，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，偏差比较器，用于比较 数据和预定的偏差，并输出当时的样品的胶片的厚度，作为时间序列数据记录的胶片的厚度数据和端点判定单元的数据。

公开(公告)号：US20130200042A1

公开(公告)日：2013-08-08

申请号：US13840663

申请日：2013-03-15

申请人： Makoto SATAKE ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Tsutomu TETSUKA ,  Tatehito USUI ,  Ryoji NISHIO

发明人： Makoto SATAKE ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Tsutomu TETSUKA ,  Tatehito USUI ,  Ryoji NISHIO

IPC分类号： G11B5/84

CPC分类号： G11B5/84 ,  C23F4/00 ,  H01F10/14 ,  H01F10/16 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32449 ,  H01L43/12

摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

摘要翻译： 在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属， 用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时 功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

公开(公告)号：US20080011422A1

公开(公告)日：2008-01-17

申请号：US11780014

申请日：2007-07-19

申请人： Toshio MASUDA ,  Tatehito USUI ,  Mitsuru SUEHIRO ,  Hiroshi KANEKIYO ,  Hideyuki YAMAMOTO ,  Kazue TAKAHASHI ,  Hiromichi ENAMI

发明人： Toshio MASUDA ,  Tatehito USUI ,  Mitsuru SUEHIRO ,  Hiroshi KANEKIYO ,  Hideyuki YAMAMOTO ,  Kazue TAKAHASHI ,  Hiromichi ENAMI

IPC分类号： H05H1/00

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972

摘要： A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.

摘要翻译： 等离子体处理装置包括具有设置在处理室中的安装表面的样品台的真空容器，以及构成室的天花板的基本均匀的厚度和电功率的板。 该板与样品台相对设置并基本上平行，以覆盖舞台安装表面的整个区域并且在其中具有通孔。 直径大于通孔直径的光发射器设置在真空容器的内部，并且具有位于板的后表面上方且间隔很小距离的位置处的端面，以便接收来自腔室的光 通过通孔。 光发射器相对于板的后表面独立地可拆卸。