摘要:
A photosensor with improved correction of image signals has a first photosensor portion including a plurality of photoelectric converting devices for reading an object and providing image signals thereof. A second photosensor portion includes a plurality of photoelectric converting devices and provides reference signals from light reflected from a reference member, or light received directly from a light source. Correction circuitry corrects the image signals from the first photosensor portion in accordance with the reference signals output from the second photosensor portion. Preferably, the photoelectric converting devices of the first and second photosensor portions are arranged in adjacent, parallel lines on the same substrate. Preferably, reference signals from the converting devices of the second photosensor are used by the correction circuitry to correct the electrical signals from substantially adjacent converting devices of the first photosensor portion. A single converting device of the second photosensor portion may be used to correct either one or more of the converting devices of the first photosensor portion.
摘要:
A photosensor with improved correction of image signals has a first photosensor portion including a plurality of photoelectric converting devices for reading an object and providing image signals thereof. A second photosensor portion includes a plurality of photoelectric converting devices and provides reference signals from light reflected from a reference number, or light received directly from a light source. Correction circuitry corrects the image signals from the first photosensor portion in accordance with the reference signals output from the second photosensor portion. Preferably, the photoelectric converting devices of the first and second photosensor portions are arranged in adjacent, parallel lines on the same substrate. Preferably, reference signals from the converting devices of the second photosensor are used by the correction circuitry to correct the electrical signals from substantially adjacent converting devices of the first photosensor portion. A single converting device of the second photosensor portion may be used to correct either one or more of the converting devices of the first photosensor portion.
摘要:
The present invention relates to a method of driving a thin film transistor type optical sensor, having a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode.The thin film transistor type optical sensor is driven by providing the gate electrode with a threshold voltage for a thin film transistor provided adjacent to the thin film transistor type optical sensor or a voltage based on the threshold voltage.
摘要:
The present invention relates to a method of driving a thin film transistor type optical sensor, having a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode.The thin film transistor type optical sensor is driven by providing the gate electrode with a threshold voltage for a thin film transistor provided adjacent to the thin film transistor type optical sensor or a voltage based on the threshold voltage.
摘要:
An image reading device includes a plurality of photoelectric converting elements, a plurality of accumulating elements corresponding to each of the photoelectric converting elements, and switching circuitry for reading out the signals accumulated in the accumulating elements. Each of the photoelectric converting elements comprises a switching portion and a sensor portion. Driving circuitry is provided for driving the photoelectric converting elements by activating the switching portions to release the charges accumulated in the accumulating elements through the photoelectric converting elements in order to reset the accumulated elements.
摘要:
A photoelectric conversion device comprises a plurality of blocks each having a plurality of sensor elements each consisting of a combination of a photoelectric conversion section, a charge storage section connected to the photoelectric conversion section, and a switch section arranged in a path for reading a charge from said charge storage section. Gate lines for operating a plurality of switch sections in a given block are commonly connected. Read lines from said switch sections are commonly connected in units of sensor elements corresponding to each block to constitute a wiring matrix. The gate lines are arranged between the adjacent common read lines of the wiring matrix.
摘要:
A semiconductor device wherein m.times.n switch means connected to m.times.n functional elements for transferring signals by switching, and a matrix wiring section having wiring connected respectively to said m.times.n switching means are formed on a common substrate, and wherein said matrix wiring section comprises a lamination structure formed by stacking, at least, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, a semiconductor layer, and a third conductive layer in this order.
摘要:
Disclosed is a photoelectric converter.According to the present invention, a photoelectric converter comprises a plurality of substrates, which are located adjacent to each other and on which a plurality of photoelectric conversion devices are two-dimensionally arranged, either scan circuits or detection circuits, at least, that are arranged on two opposing sides of the photoelectric converter, whereby scanning directions either from the scan circuits or from the detection circuits, which are arranged on the two opposing sides, are capable of being set so as to be performed in like directions.
摘要:
A photoelectric converter includes a plurality of substrates, which are located adjacent to each other and on which a plurality of photoelectric conversion devices are two-dimensionally arranged, and either scan circuits or detection circuits that are arranged on two opposing sides of the photoelectric converter, whereby scanning directions either from the scan circuits or from the detection circuits, which are arranged on the two opposing sides, are capable of being set so as to be performed in like directions.
摘要:
A photoelectric converter includes a plurality of substrates, which are located adjacent to each other and on which a plurality of photoelectric conversion devices are two-dimensionally arranged, and either scan circuits or detection circuits that are arranged on two opposing sides of the photoelectric converter, whereby scanning directions either from the scan circuits or from the detection circuits, which are arranged on the two opposing sides, are capable of being set so as to be performed in like directions.