摘要:
A photosensor with improved correction of image signals has a first photosensor portion including a plurality of photoelectric converting devices for reading an object and providing image signals thereof. A second photosensor portion includes a plurality of photoelectric converting devices and provides reference signals from light reflected from a reference member, or light received directly from a light source. Correction circuitry corrects the image signals from the first photosensor portion in accordance with the reference signals output from the second photosensor portion. Preferably, the photoelectric converting devices of the first and second photosensor portions are arranged in adjacent, parallel lines on the same substrate. Preferably, reference signals from the converting devices of the second photosensor are used by the correction circuitry to correct the electrical signals from substantially adjacent converting devices of the first photosensor portion. A single converting device of the second photosensor portion may be used to correct either one or more of the converting devices of the first photosensor portion.
摘要:
The present invention relates to a method of driving a thin film transistor type optical sensor, having a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode.The thin film transistor type optical sensor is driven by providing the gate electrode with a threshold voltage for a thin film transistor provided adjacent to the thin film transistor type optical sensor or a voltage based on the threshold voltage.
摘要:
The present invention relates to a method of driving a thin film transistor type optical sensor, having a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode.The thin film transistor type optical sensor is driven by providing the gate electrode with a threshold voltage for a thin film transistor provided adjacent to the thin film transistor type optical sensor or a voltage based on the threshold voltage.
摘要:
An image reading device includes a plurality of photoelectric converting elements, a plurality of accumulating elements corresponding to each of the photoelectric converting elements, and switching circuitry for reading out the signals accumulated in the accumulating elements. Each of the photoelectric converting elements comprises a switching portion and a sensor portion. Driving circuitry is provided for driving the photoelectric converting elements by activating the switching portions to release the charges accumulated in the accumulating elements through the photoelectric converting elements in order to reset the accumulated elements.
摘要:
A photosensor with improved correction of image signals has a first photosensor portion including a plurality of photoelectric converting devices for reading an object and providing image signals thereof. A second photosensor portion includes a plurality of photoelectric converting devices and provides reference signals from light reflected from a reference number, or light received directly from a light source. Correction circuitry corrects the image signals from the first photosensor portion in accordance with the reference signals output from the second photosensor portion. Preferably, the photoelectric converting devices of the first and second photosensor portions are arranged in adjacent, parallel lines on the same substrate. Preferably, reference signals from the converting devices of the second photosensor are used by the correction circuitry to correct the electrical signals from substantially adjacent converting devices of the first photosensor portion. A single converting device of the second photosensor portion may be used to correct either one or more of the converting devices of the first photosensor portion.
摘要:
A photoelectric conversion device comprises a plurality of blocks each having a plurality of sensor elements each consisting of a combination of a photoelectric conversion section, a charge storage section connected to the photoelectric conversion section, and a switch section arranged in a path for reading a charge from said charge storage section. Gate lines for operating a plurality of switch sections in a given block are commonly connected. Read lines from said switch sections are commonly connected in units of sensor elements corresponding to each block to constitute a wiring matrix. The gate lines are arranged between the adjacent common read lines of the wiring matrix.
摘要:
A semiconductor device wherein m.times.n switch means connected to m.times.n functional elements for transferring signals by switching, and a matrix wiring section having wiring connected respectively to said m.times.n switching means are formed on a common substrate, and wherein said matrix wiring section comprises a lamination structure formed by stacking, at least, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, a semiconductor layer, and a third conductive layer in this order.
摘要:
To eliminate non-read time in a photoelectric converting device, a photoelectric converting section is provided in which a plurality of photoelectric conversion elements, switching elements, matrix signal wirings, and gate drive wirings are arranged on the same substrate such that the photoelectric converting section generates parallel signals. A drive switching section is provided for applying drive signals to the gate drive wirings. A read switching section is provided for converting the parallel signals which are transferred from the matrix signal wirings into a serial signal, and for outputting the serial signal. The read switching section comprises a plurality of transfer switches respectively connected to the matrix signal wirings. The transfer switches are preferably activated together, simultaneously. A plurality of read capacitors are also provided in the read switching section to store the charges transferred through the matrix signal wirings. The read switching section also includes a plurality of read switches for reading out carriers stored in the plurality of read capacitors. The read switching section also includes reading circuitry for reading the read switches by sequentially switching the read switches so that a period of driving the transfer switches and a period of driving a first one of the read switches are partially overlapped.
摘要:
A liquid crystal device has a light source and liquid crystal elements which selectively transmit light emitted by the light source. The liquid crystal device comprises: the light source, being an electroluminescent device, having a transparent electrode disposed on a light output side of the light source, an electrode opposite to the transparent electrode, and an electroluminescence emission layer interposed between the transparent electrode and the opposite electrode; voltage supply means connected to the transparent electrode in order to feed a reference voltage to the transparent electrode; and driving voltage application means for applying a driving voltage to the opposite electrode. The driving voltage application means comprises a separate excitation type driving circuit using the capacitance of the electroluminescent device itself to produce an alternating current, and pulse generating means for generating a pulse responsive to an input signal to turn on and off a switch of the separate excitation type driving circuit. The pulse generating means includes a multivibrator and a capacitor and a resistor determine the width of the pulse.
摘要:
An electronic circuit apparatus comprises an array of M.times.N functional elements, M.times.N switching elements provided in a one-to-one correspondence with the M.times.N functional elements, a shift register having M output lines, and a selector having N select lines. M control lines are commonly connected in units of N elements of the M.times.N switching elements. The M control lines are connected to the M output lines of said shift register. N input and/or output lines are commonly connected in units of M elements of the M.times.N switching elements. The N input and/or output lines are connected to the N select lines of the selector. Transistors constituting the shift register are thin-film transistors. And, transistors constituting the selector are transistors each having an active region consisting of a single-crystal semiconductor.