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    Nonvolatile memory system, semiconductor memory and writing method
    1.
    发明申请
    Nonvolatile memory system, semiconductor memory and writing method 失效
    非易失性存储器系统，半导体存储器和写入方法

    公开(公告)号：US20050157550A1

    公开(公告)日：2005-07-21

    申请号：US11075813

    申请日：2005-03-10

    申请人： Tatsuya Ishii ,  Hitoshi Nina ,  Osamu Tsuchiya ,  Shooji Kubono

    发明人： Tatsuya Ishii ,  Hitoshi Nina ,  Osamu Tsuchiya ,  Shooji Kubono

    IPC分类号： G11C16/02 ,  G11C7/00 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10

    CPC分类号： G11C16/3427 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3431 ,  G11C16/3459 ,  G11C2216/18

    摘要： A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

    摘要翻译： 非易失性半导体存储器由于与字线相关的干扰而恢复存储器单元的阈值的变化。 非易失性存储器在每次写入操作之后连续执行许多写入操作，而不执行单扇区擦除，执行比通常的写入操作更快的附加写入操作，以及减轻用于附加写入的软件的负担。 存储在指定扇区中的数据在保存在寄存器中之前被读出，并且当给出预定命令时，所选扇区被进行单扇区擦除。 然后写入预期值数据由保存的数据和要另外编写的数据形成，完成写入操作。

    Nonvolatile memory system, semiconductor memory, and writing method
    3.
    发明申请
    Nonvolatile memory system, semiconductor memory, and writing method 失效
    非易失性存储器系统，半导体存储器和写入方法

    公开(公告)号：US20080008009A1

    公开(公告)日：2008-01-10

    申请号：US11896969

    申请日：2007-09-07

    申请人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

    发明人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

    IPC分类号： G11C16/04

    CPC分类号： G11C16/3427 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3431 ,  G11C16/3459 ,  G11C2216/18

    摘要： A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

    摘要翻译： 非易失性半导体存储器由于与字线相关的干扰而恢复存储器单元的阈值的变化。 非易失性存储器在每次写入操作之后连续执行许多写入操作，而不执行单扇区擦除，执行比通常的写入操作更快的附加写入操作，以及减轻用于附加写入的软件的负担。 存储在指定扇区中的数据在保存在寄存器中之前被读出，并且当给出预定命令时，所选扇区被进行单扇区擦除。 然后写入预期值数据由保存的数据和要另外编写的数据形成，完成写入操作。

    Nonvolatile memory system, semiconductor memory and writing method
    5.
    发明授权
    Nonvolatile memory system, semiconductor memory and writing method 有权
    非易失性存储器系统，半导体存储器和写入方法

    公开(公告)号：US08004905B2

    公开(公告)日：2011-08-23

    申请号：US12726485

    申请日：2010-03-18

    申请人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

    发明人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

    IPC分类号： G11C11/34

    CPC分类号： G11C16/3427 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3431 ,  G11C16/3459 ,  G11C2216/18

    摘要： A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

    摘要翻译： 非易失性半导体存储器由于与字线相关的干扰而恢复存储器单元的阈值的变化。 非易失性存储器在每次写入操作之后连续执行许多写入操作，而不执行单扇区擦除，执行比通常的写入操作更快的附加写入操作，以及减轻用于附加写入的软件的负担。 存储在指定扇区中的数据在保存在寄存器中之前被读出，并且当给出预定命令时，所选扇区被进行单扇区擦除。 然后写入预期值数据由保存的数据和要另外编写的数据形成，完成写入操作。

    NONVOLATILE MEMORY SYSTEM, SEMICONDUCTOR MEMORY AND WRITING METHOD
    9.
    发明申请
    NONVOLATILE MEMORY SYSTEM, SEMICONDUCTOR MEMORY AND WRITING METHOD 有权
    非易失性存储器系统，半导体存储器和写入方法

    公开(公告)号：US20100182847A1

    公开(公告)日：2010-07-22

    申请号：US12726485

    申请日：2010-03-18

    申请人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

    发明人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

    IPC分类号： G11C16/04

    CPC分类号： G11C16/3427 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3431 ,  G11C16/3459 ,  G11C2216/18

    摘要： A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

    摘要翻译： 非易失性半导体存储器由于与字线相关的干扰而恢复存储器单元的阈值的变化。 非易失性存储器在每次写入操作之后连续执行许多写入操作，而不执行单扇区擦除，执行比通常的写入操作更快的附加写入操作，以及减轻用于附加写入的软件的负担。 存储在指定扇区中的数据在保存在寄存器中之前被读出，并且当给出预定命令时，所选扇区被进行单扇区擦除。 然后写入预期值数据由保存的数据和要另外编写的数据形成，完成写入操作。

    NONVOLATILE MEMORY SYSTEM, SEMICONDUCTOR MEMORY, AND WRITING METHOD
    10.
    发明申请
    NONVOLATILE MEMORY SYSTEM, SEMICONDUCTOR MEMORY, AND WRITING METHOD 失效
    非易失性存储器系统，半导体存储器和写入方法

    公开(公告)号：US20090003085A1

    公开(公告)日：2009-01-01

    申请号：US12145936

    申请日：2008-06-25

    申请人： Tatsuya ISHII ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

    发明人： Tatsuya ISHII ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

    IPC分类号： G11C16/06

    CPC分类号： G11C16/3427 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3431 ,  G11C16/3459 ,  G11C2216/18

    摘要： A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

    摘要翻译： 非易失性半导体存储器由于与字线相关的干扰而恢复存储器单元的阈值的变化。 非易失性存储器在每次写入操作之后连续执行许多写入操作，而不执行单扇区擦除，执行比通常的写入操作更快的附加写入操作，以及减轻用于附加写入的软件的负担。 存储在指定扇区中的数据在保存在寄存器中之前被读出，并且当给出预定命令时，所选扇区被进行单扇区擦除。 然后写入预期值数据由保存的数据和要另外编写的数据形成，完成写入操作。