公开(公告)号：US08025759B2

公开(公告)日：2011-09-27

申请号：US10559815

申请日：2004-07-01

申请人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

发明人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

IPC分类号： H01L21/304 ,  B24B37/04

CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有被配置为输入形成在待抛光的基板上的膜的期望厚度的接口（310）和被配置为在其中至少一个过去的基板上存储抛光速率数据的存储装置（308a）。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算抛光速率和基于抛光速率数据和期望厚度的最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

公开(公告)号：US20110306274A1

公开(公告)日：2011-12-15

申请号：US13216576

申请日：2011-08-24

申请人： Tatsuya SASAKI ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

发明人： Tatsuya SASAKI ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

IPC分类号： B24B49/00

CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有被配置为输入形成在待抛光的基板上的膜的期望厚度的接口（310）和被配置为在其中至少一个过去的基板上存储抛光速率数据的存储装置（308a）。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算抛光速率和基于抛光速率数据和期望厚度的最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

公开(公告)号：US20060166503A1

公开(公告)日：2006-07-27

申请号：US10559815

申请日：2004-07-01

申请人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

发明人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

IPC分类号： B24B49/00 ,  H01L21/461 ,  B24B51/00

CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有接口（310），其被配置为输入形成在待抛光的基板上的膜的期望厚度;以及存储装置（308a），被配置为将抛光速率数据存储在其中的至少一个过去的基板上。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算基于抛光速率数据和期望厚度的抛光速率和最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

公开(公告)号：US08398811B2

公开(公告)日：2013-03-19

申请号：US13216576

申请日：2011-08-24

申请人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

发明人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

IPC分类号： B24B49/00

CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有被配置为输入形成在待抛光的基板上的膜的期望厚度的接口（310）和被配置为在其中至少一个过去的基板上存储抛光速率数据的存储装置（308a）。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算抛光速率和基于抛光速率数据和期望厚度的最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

公开(公告)号：US08388409B2

公开(公告)日：2013-03-05

申请号：US12700917

申请日：2010-02-05

申请人： Hidetaka Nakao ,  Yasumitsu Kawabata ,  Yoshifumi Katsumata ,  Naoki Ozawa ,  Tatsuya Sasaki ,  Atsushi Shigeta

发明人： Hidetaka Nakao ,  Yasumitsu Kawabata ,  Yoshifumi Katsumata ,  Naoki Ozawa ,  Tatsuya Sasaki ,  Atsushi Shigeta

IPC分类号： B24B51/00

CPC分类号： B24B37/013 ,  B24B49/03 ,  B24B49/12

摘要： A substrate polishing apparatus is provided for preventing excessive polishing and insufficient polishing, and enabling a quantitative setting of an additional polishing time. The substrate polishing apparatus comprises a mechanism for polishing a substrate to be polished; a film thickness measuring device for measuring the thickness of a thin film deposited on the substrate; an interface for entering a target thickness for the polished thin film; a storage area for preserving past polishing results; and a processing unit for calculating a polishing time and a polishing rate. The substrate polishing apparatus builds an additional polishing database for storing data acquired from the result of additional polishing in the storage area.

摘要翻译： 提供了用于防止过度抛光和研磨不足的基板抛光装置，并且能够定量设定额外的抛光时间。 基板抛光装置包括用于抛光待抛光的基板的机构; 用于测量沉积在基板上的薄膜的厚度的膜厚测量装置; 用于输入抛光薄膜的目标厚度的界面; 用于保留过去抛光结果的存储区域; 以及用于计算抛光时间和抛光速率的处理单元。 衬底抛光装置构建另外的抛光数据库，用于存储从存储区域中的附加抛光结果获取的数据。

公开(公告)号：US20050142991A1

公开(公告)日：2005-06-30

申请号：US11013912

申请日：2004-12-17

申请人： Hidetaka Nakao ,  Yasumitsu Kawabata ,  Yoshifumi Katsumata ,  Naoki Ozawa ,  Tatsuya Sasaki ,  Atsushi Shigeta

发明人： Hidetaka Nakao ,  Yasumitsu Kawabata ,  Yoshifumi Katsumata ,  Naoki Ozawa ,  Tatsuya Sasaki ,  Atsushi Shigeta

IPC分类号： B24B51/00 ,  B24B49/03 ,  B24B49/12 ,  B24D7/12 ,  H01L21/304 ,  B24B7/00 ,  B24B9/00 ,  H01L21/76

CPC分类号： B24B37/013 ,  B24B49/03 ,  B24B49/12

摘要： A substrate polishing apparatus is provided for preventing excessive polishing and insufficient polishing, and enabling a quantitative setting of an additional polishing time. The substrate polishing apparatus comprises a mechanism for polishing a substrate to be polished; a film thickness measuring device for measuring the thickness of a thin film deposited on the substrate; an interface for entering a target thickness for the polished thin film; a storage area for preserving past polishing results; and a processing unit for calculating a polishing time and a polishing rate. The substrate polishing apparatus builds an additional polishing database for storing data acquired from the result of additional polishing in the storage area.

摘要翻译： 提供了用于防止过度抛光和研磨不足的基板抛光装置，并且能够定量设定额外的抛光时间。 基板抛光装置包括用于抛光待抛光的基板的机构; 用于测量沉积在基板上的薄膜的厚度的膜厚测量装置; 用于输入抛光薄膜的目标厚度的界面; 用于保存过去抛光结果的存储区域; 以及用于计算抛光时间和抛光速率的处理单元。 基板抛光装置构建另外的抛光数据库，用于存储从存储区域中的附加抛光结果获取的数据。