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    Polishing apparatus and polishing method
    1.
    发明授权
    Polishing apparatus and polishing method 有权
    抛光设备和抛光方法

    公开(公告)号：US08025759B2

    公开(公告)日：2011-09-27

    申请号：US10559815

    申请日：2004-07-01

    申请人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

    发明人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

    IPC分类号： H01L21/304 ,  B24B37/04

    CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

    摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

    摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有被配置为输入形成在待抛光的基板上的膜的期望厚度的接口（310）和被配置为在其中至少一个过去的基板上存储抛光速率数据的存储装置（308a）。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算抛光速率和基于抛光速率数据和期望厚度的最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

    POLISHING APPARATUS AND POLISHING METHOD
    2.
    发明申请
    POLISHING APPARATUS AND POLISHING METHOD 有权
    抛光装置和抛光方法

    公开(公告)号：US20110306274A1

    公开(公告)日：2011-12-15

    申请号：US13216576

    申请日：2011-08-24

    申请人： Tatsuya SASAKI ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

    发明人： Tatsuya SASAKI ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

    IPC分类号： B24B49/00

    CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

    摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

    摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有被配置为输入形成在待抛光的基板上的膜的期望厚度的接口（310）和被配置为在其中至少一个过去的基板上存储抛光速率数据的存储装置（308a）。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算抛光速率和基于抛光速率数据和期望厚度的最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

    Polishing apparatus and polishing method
    3.
    发明申请
    Polishing apparatus and polishing method 有权
    抛光设备和抛光方法

    公开(公告)号：US20060166503A1

    公开(公告)日：2006-07-27

    申请号：US10559815

    申请日：2004-07-01

    申请人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

    发明人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

    IPC分类号： B24B49/00 ,  H01L21/461 ,  B24B51/00

    CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

    摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

    摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有接口（310），其被配置为输入形成在待抛光的基板上的膜的期望厚度;以及存储装置（308a），被配置为将抛光速率数据存储在其中的至少一个过去的基板上。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算基于抛光速率数据和期望厚度的抛光速率和最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

    Polishing apparatus and polishing method
    4.
    发明授权
    Polishing apparatus and polishing method 有权
    抛光设备和抛光方法

    公开(公告)号：US08398811B2

    公开(公告)日：2013-03-19

    申请号：US13216576

    申请日：2011-08-24

    申请人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

    发明人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

    IPC分类号： B24B49/00

    CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

    摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

    摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有被配置为输入形成在待抛光的基板上的膜的期望厚度的接口（310）和被配置为在其中至少一个过去的基板上存储抛光速率数据的存储装置（308a）。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算抛光速率和基于抛光速率数据和期望厚度的最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

    Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method for selecting wavelength of light for polishing endpoint detection, and polishing endpoint detection method
    5.
    发明授权
    Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method for selecting wavelength of light for polishing endpoint detection, and polishing endpoint detection method 有权
    用于选择用于抛光端点检测的光的波长的图的制作方法，用于选择用于抛光端点检测的光的波长的选择方法和抛光终点检测方法

    公开(公告)号：US08388408B2

    公开(公告)日：2013-03-05

    申请号：US12461533

    申请日：2009-08-14

    申请人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta

    发明人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta

    IPC分类号： B24B49/00 ,  B24B51/00

    CPC分类号： B24B49/12 ,  B24B37/013

    摘要： A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time.

    摘要翻译： 提供了一种制造用于选择光学抛光终点检测中的光的波长的图的方法。 该方法包括通过抛光垫抛光具有膜的基板的表面; 在基板的研磨过程中将光施加到基板的表面并接收来自基板的反射光; 计算各波长的反射光的相对反射率; 确定反射光的波长，其指示随抛光时间变化的相对反射率的局部最大点和局部最小点; 识别指示表示局部最大点和局部最小点的波长的时间点; 并且将由波长相对应的波长和时间点指定的坐标绘制到具有指示光的波长和抛光时间的坐标轴的坐标系上。

    Polishing method and polishing apparatus
    6.
    发明申请
    Polishing method and polishing apparatus 审中-公开
    抛光方法和抛光装置

    公开(公告)号：US20070243797A1

    公开(公告)日：2007-10-18

    申请号：US11785190

    申请日：2007-04-16

    申请人： Akira Fukunaga ,  Noburu Shimizu ,  Shintaro Kamioka ,  Manabu Tsujimura

    发明人： Akira Fukunaga ,  Noburu Shimizu ,  Shintaro Kamioka ,  Manabu Tsujimura

    IPC分类号： B24B49/00 ,  B24B1/00

    CPC分类号： B24B37/042 ,  B24B49/045 ,  H01L22/26

    摘要： A polishing method for polishing a workpiece using the chemical polishing process endpoint detecting technology is applicable to actual polishing processes and polishing apparatus. The polishing method including pressing the workpiece against a polishing surface of a polishing table, moving the workpiece and the polishing surface relatively to each other to polish the workpiece, and disposing a gas suction pipe having a gas inlet port, directly above the polishing surface, supplying an atmospheric gas from above the polishing surface through the gas inlet port to a gas detector via the gas suction pipe, and monitoring a particular gas contained in the atmospheric gas with the gas detector while the workpiece is being polished.

    摘要翻译： 使用化学抛光处理终点检测技术对工件进行抛光的抛光方法适用于实际的抛光工艺和抛光装置。 抛光方法包括将工件压靠在抛光台的研磨面上，相对移动工件和抛光表面以抛光工件，并且在抛光表面正上方设置具有气体入口的气体吸入管， 通过气体吸入管将来自抛光表面上方的大气气体通过气体入口供给到气体检测器，并且在抛光工件时，利用气体检测器监测包含在气体中的特定气体。

    Processing end point detection method, polishing method,and polishing apparatus
    7.
    发明申请
    Processing end point detection method, polishing method,and polishing apparatus 有权
    处理终点检测方法，抛光方法和抛光装置

    公开(公告)号：US20100015889A1

    公开(公告)日：2010-01-21

    申请号：US12311560

    申请日：2007-10-05

    申请人： Noburu Shimizu ,  Shinro Ohta ,  Koji Maruyama ,  Yoichi Kobayashi ,  Ryuichiro Mitani ,  Shunsuke Nakai ,  Atsushi Shigeta

    发明人： Noburu Shimizu ,  Shinro Ohta ,  Koji Maruyama ,  Yoichi Kobayashi ,  Ryuichiro Mitani ,  Shunsuke Nakai ,  Atsushi Shigeta

    IPC分类号： B24B49/04 ,  B24B49/12 ,  B24B37/04

    CPC分类号： B24B49/04 ,  B24B37/013 ,  B24B49/12 ,  B24B49/16 ,  B24D7/12 ,  G01B11/0675 ,  G01N21/55 ,  G01N21/9501 ,  G05B19/406 ,  G05B19/4065 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

    摘要翻译： 本发明涉及通过计算工件（抛光对象）的表面的特性值来检测处理终点的定时（例如，抛光停止，改变抛光条件）的处理终点检测方法，例如 底物。 该方法包括：基于频谱波形，使用基准工件或模拟计算，产生指示处理终点处的反射强度与波长之间的关系的光谱波形，选择局部最大值的波长和局部最小值的局部最小值 反射强度，从所选择的波长的反射强度计算相对于要处理的表面的特征值，将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值 并且通过在工件的加工期间检测特征点来检测工件的加工终点。