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    Solid-state imaging device, method for driving dolid-state imaging device, imaging method, and imager
    5.
    发明申请
    Solid-state imaging device, method for driving dolid-state imaging device, imaging method, and imager 审中-公开
    固态成像装置，驱动立体成像装置的方法，成像方法和成像装置

    公开(公告)号：US20050224842A1

    公开(公告)日：2005-10-13

    申请号：US10517222

    申请日：2003-06-12

    申请人： Takayuki Toyama

    发明人： Takayuki Toyama

    IPC分类号： H01L27/148 ,  H01L29/768 ,  H04N5/335 ,  H04N5/341 ,  H04N5/363 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/376 ,  H04N5/378

    CPC分类号： H01L29/76816 ,  H01L27/14831 ,  H04N5/335 ,  H04N5/3728 ,  H04N5/378

    摘要： The present invention relates to a CCD solid state image sensor of a scanning read-out type and to a drive method thereof as well as an image pick-up method and the image pick-up device, particularly in which a plurality of vertical CCD columns can be assigned to one electric-charge detection unit with the small number of wiring. In the present invention, adjacent columns of the vertical CCDs are assigned to one electric-charge detection unit. Further, the stages of the voltage transfer between the vertical CCD column and a voltage detection unit is made different; the electrode arrangement is devised; or the drive timing is adjusted. Accordingly, the phase of electric-charge transfer with respect to the plurality of adjacent vertical CCD columns, when the horizontal electric-charge at the same position in the direction of the row obtained by the photo-conductive units is made to reach the electric-charge detection unit, becomes different.

    摘要翻译： 本发明涉及一种扫描读出型的CCD固态图像传感器及其驱动方法以及图像拾取方法和图像拾取装置，特别地，其中多个垂直CCD列 可以分配一个电量较小的一个电荷检测单元。 在本发明中，垂直CCD的相邻列分配给一个电荷检测单元。 此外，使垂直CCD列和电压检测单元之间的电压转移的阶段不同; 设计电极布置; 或者调整驱动定时。 因此，当使由导光单元获得的行的方向上的相同位置处的水平电荷达到电 - 电位时，相对于多个相邻的垂直CCD列的电荷转移的相位， 充电检测单元变得不同。

    Semiconductor device and process for production thereof
    6.
    发明申请
    Semiconductor device and process for production thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US20050179054A1

    公开(公告)日：2005-08-18

    申请号：US11103121

    申请日：2005-04-11

    申请人： Takayuki Toyama

    发明人： Takayuki Toyama

    IPC分类号： H01L21/285 ,  H01L21/335 ,  H01L29/778 ,  H01L31/0328

    CPC分类号： H01L29/66462 ,  H01L21/28593 ,  H01L29/7785

    摘要： A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof. The semiconductor device includes a channel layer (which constitutes a current channel), a first semiconductor layer formed on said channel layer, a second semiconductor layer in an island-like shape doped with a conductive impurity and formed on said first semiconductor layer, and a gate electrode formed on said second semiconductor layer, wherein said first and second semiconductor layers under said gate electrode have a conductive impurity region formed therein to control the threshold value of current flowing through said channel layer, and the conductive impurity region formed in second semiconductor layer is doped with a conductive impurity more heavily than in the conductive impurity region formed in said first semiconductor layer.

    摘要翻译： 能够使用单个正电源并具有低栅极电阻的半导体器件及其制造方法。 半导体器件包括沟道层（其构成电流沟道），形成在所述沟道层上的第一半导体层，在所述第一半导体层上形成有导电杂质的岛状形状的第二半导体层，以及 栅极形成在所述第二半导体层上，其中所述栅电极下方的所述第一和第二半导体层具有形成在其中的导电杂质区，以控制流过所述沟道层的电流的阈值，以及形成在第二半导体层中的导电杂质区 掺杂有比在所述第一半导体层中形成的导电杂质区域更重的导电杂质。

    Solid-state image pickup device, method for driving solid-state image pickup device, and image pickup apparatus
    7.
    发明授权
    Solid-state image pickup device, method for driving solid-state image pickup device, and image pickup apparatus 有权
    固态图像拾取装置，用于驱动固态图像拾取装置的方法和图像拾取装置

    公开(公告)号：US08179461B2

    公开(公告)日：2012-05-15

    申请号：US12585177

    申请日：2009-09-08

    申请人： Ryoji Suzuki ,  Takayuki Toyama ,  Koji Mishina ,  Hiroyuki Tsuchiya

    发明人： Ryoji Suzuki ,  Takayuki Toyama ,  Koji Mishina ,  Hiroyuki Tsuchiya

    IPC分类号： H04N9/64 ,  H04N3/14 ,  H04N5/335 ,  H01L27/00 ,  H01L31/062 ,  H01L31/113

    CPC分类号： H04N5/361 ,  H04N5/3572 ,  H04N5/374

    摘要： A solid-state image pickup device includes a pixel array section including an effective pixel region, an optical black pixel region, and a pixel region between the effective pixel region and the optical black pixel region; a vertical drive section which performs driving so that signals of pixels of the pixel region disposed at a side of the effective pixel region in a vertical direction are skipped and signals of pixels of the effective pixel region and the optical black pixel region are read; and a horizontal drive section which performs driving so that, from among the pixels selected by the vertical drive section, the signals of the pixels of the pixel region disposed at a side of the effective pixel region in a horizontal direction are skipped and the signals of the pixels of the effective pixel region and the optical black pixel region are read.

    摘要翻译： 固体摄像装置包括：像素阵列部，包括有效像素区域，光学黑色像素区域和有效像素区域与光学黑色像素区域之间的像素区域; 垂直驱动部，其进行驱动，使得设置在有效像素区域的垂直方向的一侧的像素区域的像素的信号被跳过，并且读取有效像素区域和光学黑色像素区域的像素的信号; 以及水平驱动部，其进行驱动，使得从垂直驱动部选择的像素中，跳过设置在水平方向上的有效像素区域侧的像素区域的像素的信号，并且， 读取有效像素区域和光学黑色像素区域的像素。

    Method of manufacturing a semiconductor device having a channel layer, a first semiconductor layer and a second semiconductor layer with a conductive impurity region
    8.
    发明授权
    Method of manufacturing a semiconductor device having a channel layer, a first semiconductor layer and a second semiconductor layer with a conductive impurity region 有权
    制造具有沟道层的半导体器件的方法，第一半导体层以及具有导电杂质区的第二半导体层

    公开(公告)号：US07141465B2

    公开(公告)日：2006-11-28

    申请号：US10983784

    申请日：2004-11-08

    申请人： Takayuki Toyama

    发明人： Takayuki Toyama

    IPC分类号： H01L21/335

    CPC分类号： H01L29/66462 ,  H01L21/28593 ,  H01L29/7785

    摘要： A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof.The semiconductor device includes a channel layer (which constitutes a current channel), a first semiconductor layer formed on said channel layer, a second semiconductor layer in an island-like shape doped with a conductive impurity and formed on said first semiconductor layer, and a gate electrode formed on said second semiconductor layer, wherein said first and second semiconductor layers under said gate electrode have a conductive impurity region formed therein to control the threshold value of current flowing through said channel layer, and the conductive impurity region formed in second semiconductor layer is doped with a conductive impurity more heavily than in the conductive impurity region formed in said first semiconductor layer.

    摘要翻译： 能够使用单个正电源并具有低栅极电阻的半导体器件及其制造方法。 半导体器件包括沟道层（其构成电流沟道），形成在所述沟道层上的第一半导体层，在所述第一半导体层上形成有导电杂质的岛状形状的第二半导体层，以及 栅极形成在所述第二半导体层上，其中所述栅电极下方的所述第一和第二半导体层具有形成在其中的导电杂质区，以控制流过所述沟道层的电流的阈值，以及形成在第二半导体层中的导电杂质区 掺杂有比在所述第一半导体层中形成的导电杂质区域更重的导电杂质。

    Semiconductor device and process for production thereof
    9.
    发明申请
    Semiconductor device and process for production thereof 有权

    公开(公告)号：US20050082569A1

    公开(公告)日：2005-04-21

    申请号：US10983784

    申请日：2004-11-08

    申请人： Takayuki Toyama

    发明人： Takayuki Toyama

    IPC分类号： H01L21/285 ,  H01L21/335 ,  H01L29/778 ,  H01L29/74 ,  H01L21/336

    CPC分类号： H01L29/66462 ,  H01L21/28593 ,  H01L29/7785

    摘要： A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof. The semiconductor device includes a channel layer (which constitutes a current channel), a first semiconductor layer formed on said channel layer, a second semiconductor layer in an island-like shape doped with a conductive impurity and formed on said first semiconductor layer, and a gate electrode formed on said second semiconductor layer, wherein said first and second semiconductor layers under said gate electrode have a conductive impurity region formed therein to control the threshold value of current flowing through said channel layer, and the conductive impurity region formed in second semiconductor layer is doped with a conductive impurity more heavily than in the conductive impurity region formed in said first semiconductor layer.

    Solid-state image pickup device, method for driving solid-state image pickup device, and image pickup apparatus
    10.
    发明授权
    Solid-state image pickup device, method for driving solid-state image pickup device, and image pickup apparatus 有权
    固态图像拾取装置，用于驱动固态图像拾取装置的方法和图像拾取装置

    公开(公告)号：US09077920B2

    公开(公告)日：2015-07-07

    申请号：US13451021

    申请日：2012-04-19

    申请人： Ryoji Suzuki ,  Takayuki Toyama ,  Koji Mishina ,  Hiroyuki Tsuchiya

    发明人： Ryoji Suzuki ,  Takayuki Toyama ,  Koji Mishina ,  Hiroyuki Tsuchiya

    IPC分类号： H04N5/374 ,  H04N5/361 ,  H04N5/357

    CPC分类号： H04N5/361 ,  H04N5/3572 ,  H04N5/374

    摘要： A solid-state image pickup device includes a pixel array section including an effective pixel region, an optical black pixel region, and a pixel region between the effective pixel region and the optical black pixel region; a vertical drive section which performs driving so that signals of pixels of the pixel region disposed at a side of the effective pixel region in a vertical direction are skipped and signals of pixels of the effective pixel region and the optical black pixel region are read; and a horizontal drive section which performs driving so that, from among the pixels selected by the vertical drive section, the signals of the pixels of the pixel region disposed at a side of the effective pixel region in a horizontal direction are skipped and the signals of the pixels of the effective pixel region and the optical black pixel region are read.

    摘要翻译： 固体摄像装置包括：像素阵列部，包括有效像素区域，光学黑色像素区域和有效像素区域与光学黑色像素区域之间的像素区域; 垂直驱动部，其进行驱动，使得设置在有效像素区域的垂直方向的一侧的像素区域的像素的信号被跳过，并且读取有效像素区域和光学黑色像素区域的像素的信号; 以及水平驱动部，其进行驱动，使得从垂直驱动部选择的像素中，跳过设置在水平方向上的有效像素区域侧的像素区域的像素的信号，并且， 读取有效像素区域和光学黑色像素区域的像素。