Direct overwrite magneto-optical storage medium not requiring an
initialization magnet
    3.
    发明授权
    Direct overwrite magneto-optical storage medium not requiring an initialization magnet 失效
    直接覆盖不需要初始化磁体的磁光存储介质

    公开(公告)号:US5361248A

    公开(公告)日:1994-11-01

    申请号:US891130

    申请日:1992-06-01

    IPC分类号: G11B11/105 G11B7/26

    摘要: A storage medium for use in a magneto-optical information storage medium does not require an initializing magnet. In one embodiment of the medium, a structure includes a memory layer, in which the orientation of magnetic regions perpendicular to the memory layer surface defines the data stored in the memory layer, a reference layer, and an intermediate layer, the intermediate layer mediating an exchange coupling between the memory layer and the reference layer. The combined properties of the storage medium provide a temperature at which, in the presence of a bias magnetic field, data stored in the medium in the form of oriented magnetic domains can be overwritten. In a second embodiment of the invention, a storage medium has two layers, a memory layer and a under layer, of materials with selected magnetic properties. The magnetic properties of the layers are selected to provide magneto-optical storage medium with direct overwriting capability, the operation of the storage medium not requiring an intialization magnet.

    摘要翻译: 用于磁光信息存储介质的存储介质不需要初始化磁体。 在介质的一个实施例中,结构包括存储层,其中垂直于存储层表面的磁区的取向限定存储在存储层中的数据,参考层和中间层,中间层介导 交换存储层和参考层之间的耦合。 存储介质的组合性质提供了在存在偏置磁场的情况下可以覆盖以定向磁畴形式存储在介质中的数据的温度。 在本发明的第二实施例中,存储介质具有两层具有选择的磁特性的材料的存储层和下层。 选择层的磁特性以提供具有直接重写能力的磁光存储介质,存储介质的操作不需要初始化磁体。

    Exchange-assisted spin transfer torque switching
    4.
    发明授权
    Exchange-assisted spin transfer torque switching 有权
    交流辅助自旋转矩转换

    公开(公告)号:US08134864B2

    公开(公告)日:2012-03-13

    申请号:US12541111

    申请日:2009-08-13

    IPC分类号: G11C11/00

    CPC分类号: G11C11/161

    摘要: In general, the invention is directed to techniques for reducing the amount of switching current that is utilized within a magnetic storage (e.g., MRAM) device. An example apparatus includes a fixed magnetic layer that provides a fixed direction of magnetization, an exchange-coupled magnetic multi-layer structure, and a non-magnetic layer placed between the fixed magnetic layer and the exchange-coupled magnetic multi-layer structure. The exchange-coupled magnetic multi-layer structure includes a recording layer configured to record information and an assisting layer having a lower anisotropy than the recording layer. The exchange coupling between the recording and assisting layers is operable to switch a magnetization direction of the recording layer. In some cases, the exchange-coupled magnetic multi-layer structure may further include a spacer separating the recording and assisting layers and configured to weaken an exchange coupling between the recording and assisting layers.

    摘要翻译: 通常,本发明涉及用于减少在磁存储(例如MRAM)设备内使用的开关电流量的技术。 示例性设备包括提供固定磁化方向的固定磁性层,交换耦合磁性多层结构和置于固定磁性层和交换耦合磁性多层结构之间的非磁性层。 交换耦合磁性多层结构包括记录信息的记录层和具有比记录层低的各向异性的辅助层。 记录层和辅助层之间的交换耦合可操作以切换记录层的磁化方向。 在一些情况下,交换耦合磁性多层结构还可以包括隔离记录和辅助层并被配置为削弱记录层和辅助层之间的交换耦合的隔离物。

    Optical recording medium having at least two separate recording layers
of different writing temperatures
    5.
    发明授权
    Optical recording medium having at least two separate recording layers of different writing temperatures 失效
    具有至少两个具有不同写入温度的分开的记录层的光学记录介质

    公开(公告)号:US5617405A

    公开(公告)日:1997-04-01

    申请号:US611266

    申请日:1996-03-05

    IPC分类号: G11B7/24 G11B11/105 G11B3/74

    CPC分类号: G11B7/24 G11B11/10582

    摘要: An optical storage device comprising at least two spaced apart recording layers, a spacer layer separating by being positioned between alternating recording layers, and each recording layer including a material responsive to a beam of radiation from a source to record information and at least one recording layer having a different write temperature selected to improve recording performance parameters.

    摘要翻译: 一种光学存储装置,包括至少两个间隔开的记录层,通过位于交替记录层之间分隔的间隔层,并且每个记录层包括响应来自源的辐射束以记录信息的材料和至少一个记录层 具有选择不同的写温度以改善记录性能参数。

    EXCHANGE-ASSISTED SPIN TRANSFER TORQUE SWITCHING
    6.
    发明申请
    EXCHANGE-ASSISTED SPIN TRANSFER TORQUE SWITCHING 有权
    交换辅助转子扭矩开关

    公开(公告)号:US20100039855A1

    公开(公告)日:2010-02-18

    申请号:US12541111

    申请日:2009-08-13

    CPC分类号: G11C11/161

    摘要: In general, the invention is directed to techniques for reducing the amount of switching current that is utilized within a magnetic storage (e.g., MRAM) device. An example apparatus includes a fixed magnetic layer that provides a fixed direction of magnetization, an exchange-coupled magnetic multi-layer structure, and a non-magnetic layer placed between the fixed magnetic layer and the exchange-coupled magnetic multi-layer structure. The exchange-coupled magnetic multi-layer structure includes a recording layer configured to record information and an assisting layer having a lower anisotropy than the recording layer. The exchange coupling between the recording and assisting layers is operable to switch a magnetization direction of the recording layer. In some cases, the exchange-coupled magnetic multi-layer structure may further include a spacer separating the recording and assisting layers and configured to weaken an exchange coupling between the recording and assisting layers.

    摘要翻译: 通常,本发明涉及用于减少在磁存储(例如MRAM)设备内使用的开关电流量的技术。 示例性设备包括提供固定磁化方向的固定磁性层,交换耦合磁性多层结构和置于固定磁性层和交换耦合磁性多层结构之间的非磁性层。 交换耦合磁性多层结构包括记录信息的记录层和具有比记录层低的各向异性的辅助层。 记录层和辅助层之间的交换耦合可操作以切换记录层的磁化方向。 在一些情况下,交换耦合磁性多层结构还可以包括隔离记录和辅助层并被配置为削弱记录层和辅助层之间的交换耦合的隔离物。