公开(公告)号：US20090090274A1

公开(公告)日：2009-04-09

申请号：US12327117

申请日：2008-12-03

申请人： Teruhiko KUMADA ,  Hideharu Nobutoki ,  Tetsuya Yamamoto ,  Takuya Kamiyama

发明人： Teruhiko KUMADA ,  Hideharu Nobutoki ,  Tetsuya Yamamoto ,  Takuya Kamiyama

IPC分类号： H01B3/18 ,  H01B3/30 ,  H01L21/312

CPC分类号： H01L21/02112 ,  H01L21/02118 ,  H01L21/02255 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/318 ,  Y10T428/31504

摘要： A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.

摘要翻译： 通过使用包含含环硼氮环的化合物和下式表示的化合物作为溶剂的组合物和/或通过在氧浓度不高的气氛下退火含有环硼氮烷环化合物的组合物来制备低介电材料 在200〜600℃下为0.1vol％以下。在下式中，Ra和Rc独立地表示烷基或酰基。 Rb表示氢原子或烷基; n表示1〜5的整数。

公开(公告)号：US20130160711A1

公开(公告)日：2013-06-27

申请号：US13772795

申请日：2013-02-21

申请人： Teruhiko KUMADA ,  Hideharu Nobutoki ,  Naoki Yasuda

发明人： Teruhiko KUMADA ,  Hideharu Nobutoki ,  Naoki Yasuda

IPC分类号： B05D1/00

CPC分类号： H01L21/02274 ,  C23C16/30 ,  C23C16/342 ,  C23C16/511 ,  H01J37/32532 ,  H01L21/02112 ,  H01L21/02205 ,  H01L21/318

摘要： A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.

摘要翻译： 一种等离子体CVD装置，包括反应室，该反应室包括用于供给包含环硼氮烷骨架的化合物的入口，设置在反应室内的供电电极，用于支撑基板并施加负电荷;以及等离子体产生机构， 经由衬底到达馈电电极，用于在反应室内产生等离子体。 一种方法形成薄膜，其中通过使用包含环硼氮烷骨架的化合物作为原料形成薄膜，并且半导体器件包括通过诸如绝缘膜的方法形成的薄膜。 该装置和方法能够制造其中低介电常数和高机械强度长时间稳定地保持并且确保绝缘特性的薄膜。