Manufacturing method of metal oxide semiconductor material for gas sensor
    1.
    发明授权
    Manufacturing method of metal oxide semiconductor material for gas sensor 有权
    用于气体传感器的金属氧化物半导体材料的制造方法

    公开(公告)号:US08529799B2

    公开(公告)日:2013-09-10

    申请号:US13060886

    申请日:2009-08-28

    IPC分类号: H01B1/02 H01B1/22

    摘要: Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.

    摘要翻译: 提供了一种用于气体传感器的金属氧化物半导体材料的制造方法,在制造过程中氧化物前体和贵金属胶体颗粒将不容易凝固。 制造方法实现了前体溶液合成步骤1,其合成其中分散有氧化物前体的氧化物前体溶液,调节氧化物前体溶液的pH的pH调节步骤3,前体 - 胶体分散体制备步骤5, 氧化物前体和贵金属胶体基本上均匀分散的氧化物前体 - 贵金属胶体分散体,纯化氧化物前体 - 贵金属胶体分散体以获得纯化的氧化物前体贵金属胶体分散体的纯化步骤7和冷冻 干燥步骤11,将纯化的氧化物前体 - 贵金属胶体分散体的沉淀物冷冻干燥。

    Gas sensor element and manufacturing method of the same
    2.
    发明授权
    Gas sensor element and manufacturing method of the same 有权
    气体传感器元件及其制造方法相同

    公开(公告)号:US09176084B2

    公开(公告)日:2015-11-03

    申请号:US13500236

    申请日:2010-10-01

    CPC分类号: G01N27/12

    摘要: Provided herein are a gas sensor element in which deformation of a sensitive portion due to stress may be reduced and a method of manufacturing the gas sensor element. A base insulating layer 9 including a heater wiring pattern 19 is formed on a front surface 3A of a support 3. The base insulating layer 9 includes a fixed portion 15 fixed to the front surface 3A of the support 3, and a nonfixed portion 17 located over an opening portion 5. A cavity portion 7 having the opening portion 5 is formed in the support 3. An electrode wiring pattern 27 and a sensitive film 31 are formed over a central portion 21 of the nonfixed portion 17 of the base insulating layer 9. The nonfixed portion 17 includes the central portion 21 and a plurality of connecting portions 23 connecting the central portion 21 and the fixed portion 15. Four connecting portions 23 each include a base portion 33 and an extended portion 35. The base portion 33 of each connecting portion 23 is formed to extend along an edge portion 5A of the opening portion 5. Each extended portion 35 is formed to extend from the base portion 33 to the central portion 21 to be connected to the central portion 21. The connecting portions 23 are formed such that the maximum width W1 of each base portion 33 is larger than the maximum width W2 of each extended portions 35.

    摘要翻译: 这里提供了一种气体传感器元件,其中可以减少由于应力引起的敏感部分的变形,以及制造气体传感器元件的方法。 包括加热器布线图案19的基底绝缘层9形成在支撑体3的前表面3A上。基底绝缘层9包括固定在支撑体3的前表面3A上的固定部分15和位于 在支撑体3上形成具有开口部分5的空腔部分7.在基底绝缘层9的非固定部分17的中心部分21上形成电极布线图案27和敏感膜31 非固定部分17包括中心部分21和连接中心部分21和固定部分15的多个连接部分23.四个连接部分23各自包括基部33和延伸部分35.每个 连接部分23形成为沿着开口部分5的边缘部分5A延伸。每个延伸部分35形成为从基部33延伸到中心部分21以连接到中心端口 连接部23形成为使得每个基部33的最大宽度W1大于每个延伸部35的最大宽度W2。

    GAS SENSOR ELEMENT AND MANUFACTURING METHOD OF THE SAME
    3.
    发明申请
    GAS SENSOR ELEMENT AND MANUFACTURING METHOD OF THE SAME 有权
    气体传感器元件及其制造方法

    公开(公告)号:US20120193730A1

    公开(公告)日:2012-08-02

    申请号:US13500236

    申请日:2010-10-01

    IPC分类号: H01L29/66 H01L21/02

    CPC分类号: G01N27/12

    摘要: Provided herein are a gas sensor element in which deformation of a sensitive portion due to stress may be reduced and a method of manufacturing the gas sensor element. A base insulating layer 9 including a heater wiring pattern 19 is formed on a front surface 3A of a support 3. The base insulating layer 9 includes a fixed portion 15 fixed to the front surface 3A of the support 3, and a nonfixed portion 17 located over an opening portion 5. A cavity portion 7 having the opening portion 5 is formed in the support 3. An electrode wiring pattern 27 and a sensitive film 31 are formed over a central portion 21 of the nonfixed portion 17 of the base insulating layer 9. The nonfixed portion 17 includes the central portion 21 and a plurality of connecting portions 23 connecting the central portion 21 and the fixed portion 15. Four connecting portions 23 each include a base portion 33 and an extended portion 35. The base portion 33 of each connecting portion 23 is formed to extend along an edge portion 5A of the opening portion 5. Each extended portion 35 is formed to extend from the base portion 33 to the central portion 21 to be connected to the central portion 21. The connecting portions 23 are formed such that the maximum width W1 of each base portion 33 is larger than the maximum width W2 of each extended portions 35.

    摘要翻译: 这里提供了一种气体传感器元件,其中可以减少由于应力引起的敏感部分的变形,以及制造气体传感器元件的方法。 包括加热器布线图案19的基底绝缘层9形成在支撑体3的前表面3A上。基底绝缘层9包括固定在支撑体3的前表面3A上的固定部分15和位于 在支撑体3上形成具有开口部分5的空腔部分7.在基底绝缘层9的非固定部分17的中心部分21上形成电极布线图案27和敏感膜31 非固定部分17包括中心部分21和连接中心部分21和固定部分15的多个连接部分23.四个连接部分23各自包括基部33和延伸部分35.每个 连接部分23形成为沿着开口部分5的边缘部分5A延伸。每个延伸部分35形成为从基部33延伸到中心部分21以连接到中心端口 连接部23形成为使得每个基部33的最大宽度W1大于每个延伸部35的最大宽度W2。

    MANUFACTURING METHOD FOR METAL OXIDE SEMICONDUCTOR MATERIAL FOR GAS SENSOR
    4.
    发明申请
    MANUFACTURING METHOD FOR METAL OXIDE SEMICONDUCTOR MATERIAL FOR GAS SENSOR 有权
    用于气体传感器的金属氧化物半导体材料的制造方法

    公开(公告)号:US20120112137A1

    公开(公告)日:2012-05-10

    申请号:US13060886

    申请日:2009-08-28

    IPC分类号: H01B1/02

    摘要: Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.

    摘要翻译: 提供了一种用于气体传感器的金属氧化物半导体材料的制造方法,在制造过程中氧化物前体和贵金属胶体颗粒将不容易凝固。 制造方法实现了前体溶液合成步骤1,其合成其中分散有氧化物前体的氧化物前体溶液,调节氧化物前体溶液的pH的pH调节步骤3,前体 - 胶体分散体制备步骤5, 氧化物前体和贵金属胶体基本上均匀分散的氧化物前体 - 贵金属胶体分散体,纯化氧化物前体 - 贵金属胶体分散体以获得纯化的氧化物前体贵金属胶体分散体的纯化步骤7和冷冻 干燥步骤11,将纯化的氧化物前体 - 贵金属胶体分散体的沉淀物冷冻干燥。

    ANGULAR VELOCITY SENSOR
    6.
    发明申请
    ANGULAR VELOCITY SENSOR 有权
    角速度传感器

    公开(公告)号:US20140224015A1

    公开(公告)日:2014-08-14

    申请号:US14241950

    申请日:2012-09-03

    IPC分类号: G01C19/56

    摘要: Provided herein is a vibration-type angular velocity sensor capable of improving detection precision of angular velocities around the Z axis and preventing detection precision of angular velocities around the X and Y axes from deteriorating. A weight 3 is columnar or conic. The outline of an outer peripheral portion of a diaphragm 1 has such shape that a straight portion ST is formed at each of four corner portions of a square. Four vibration exciting electrodes 11 are respectively located in four regions partitioned by a first imaginary line L1 and a second imaginary line L2. Four angular velocity sensing electrodes 13 are respectively located in four regions partitioned by a first imaginary diagonal line CL1 and a second imaginary diagonal line Cl2.

    摘要翻译: 本发明提供能够提高Z轴周围的角速度的检测精度的振动型角速度传感器,能够防止X轴和Y轴的角速度的检测精度降低。 重量3是圆柱形或圆锥形。 隔膜1的外周部的轮廓具有在正方形的四个角部的每一个处形成直线部ST的形状。 四个振动激励电极11分别位于由第一虚线L1和第二虚线L2分隔的四个区域中。 四个角速度感测电极13分别位于由第一虚拟对角线CL1和第二虚拟对角线C12分隔的四个区域中。