摘要:
Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.
摘要:
Provided herein are a gas sensor element in which deformation of a sensitive portion due to stress may be reduced and a method of manufacturing the gas sensor element. A base insulating layer 9 including a heater wiring pattern 19 is formed on a front surface 3A of a support 3. The base insulating layer 9 includes a fixed portion 15 fixed to the front surface 3A of the support 3, and a nonfixed portion 17 located over an opening portion 5. A cavity portion 7 having the opening portion 5 is formed in the support 3. An electrode wiring pattern 27 and a sensitive film 31 are formed over a central portion 21 of the nonfixed portion 17 of the base insulating layer 9. The nonfixed portion 17 includes the central portion 21 and a plurality of connecting portions 23 connecting the central portion 21 and the fixed portion 15. Four connecting portions 23 each include a base portion 33 and an extended portion 35. The base portion 33 of each connecting portion 23 is formed to extend along an edge portion 5A of the opening portion 5. Each extended portion 35 is formed to extend from the base portion 33 to the central portion 21 to be connected to the central portion 21. The connecting portions 23 are formed such that the maximum width W1 of each base portion 33 is larger than the maximum width W2 of each extended portions 35.
摘要:
Provided herein are a gas sensor element in which deformation of a sensitive portion due to stress may be reduced and a method of manufacturing the gas sensor element. A base insulating layer 9 including a heater wiring pattern 19 is formed on a front surface 3A of a support 3. The base insulating layer 9 includes a fixed portion 15 fixed to the front surface 3A of the support 3, and a nonfixed portion 17 located over an opening portion 5. A cavity portion 7 having the opening portion 5 is formed in the support 3. An electrode wiring pattern 27 and a sensitive film 31 are formed over a central portion 21 of the nonfixed portion 17 of the base insulating layer 9. The nonfixed portion 17 includes the central portion 21 and a plurality of connecting portions 23 connecting the central portion 21 and the fixed portion 15. Four connecting portions 23 each include a base portion 33 and an extended portion 35. The base portion 33 of each connecting portion 23 is formed to extend along an edge portion 5A of the opening portion 5. Each extended portion 35 is formed to extend from the base portion 33 to the central portion 21 to be connected to the central portion 21. The connecting portions 23 are formed such that the maximum width W1 of each base portion 33 is larger than the maximum width W2 of each extended portions 35.
摘要:
Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.
摘要:
Provided herein is a vibration-type angular velocity sensor capable of improving detection precision of angular velocities around the Z axis and preventing detection precision of angular velocities around the X and Y axes from deteriorating. A weight 3 is columnar or conic. The outline of an outer peripheral portion of a diaphragm 1 has such shape that a straight portion ST is formed at each of four corner portions of a square. Four vibration exciting electrodes 11 are respectively located in four regions partitioned by a first imaginary line L1 and a second imaginary line L2. Four angular velocity sensing electrodes 13 are respectively located in four regions partitioned by a first imaginary diagonal line CL1 and a second imaginary diagonal line Cl2.
摘要:
Provided herein is a vibration-type angular velocity sensor capable of improving detection precision of angular velocities around the Z axis and preventing detection precision of angular velocities around the X and Y axes from deteriorating. A weight 3 is columnar or conic. The outline of an outer peripheral portion of a diaphragm 1 has such shape that a straight portion ST is formed at each of four corner portions of a square. Four vibration exciting electrodes 11 are respectively located in four regions partitioned by a first imaginary line L1 and a second imaginary line L2. Four angular velocity sensing electrodes 13 are respectively located in four regions partitioned by a first imaginary diagonal line CL1 and a second imaginary diagonal line Cl2.