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公开(公告)号：US09000493B2
公开(公告)日：2015-04-07
申请号：US13402298
申请日：2012-02-22
IPC分类号： H01L27/148 , H01L27/146 , H01L31/0224
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accumulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.
摘要翻译： 固态成像装置包括具有相对面对的第一表面和第二表面的基板，光被接收通过第二表面; 第一表面上的布线层; 基板上的光电检测器; 第二表面和光电检测器之间的电荷累积区域; 以及在所述第二表面上的绝缘层，所述绝缘层具有至少部分地结晶的区域。
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公开(公告)号：US08492804B2
公开(公告)日：2013-07-23
申请号：US12945217
申请日：2010-11-12
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。
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公开(公告)号：US08183603B2
公开(公告)日：2012-05-22
申请号：US11677645
申请日：2007-02-22
IPC分类号： H01L27/148
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。
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公开(公告)号：US08471314B2
公开(公告)日：2013-06-25
申请号：US12703848
申请日：2010-02-11
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
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公开(公告)号：US20120147241A1
公开(公告)日：2012-06-14
申请号：US13402298
申请日：2012-02-22
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accummulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.
摘要翻译： 固态成像装置包括具有相对面对的第一表面和第二表面的基板，光被接收通过第二表面; 第一表面上的布线层; 基板上的光电检测器; 所述第二表面和所述光电检测器之间的电荷累积区域; 以及在所述第二表面上的绝缘层，所述绝缘层具有至少部分地结晶的区域。
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公开(公告)号：US20110058062A1
公开(公告)日：2011-03-10
申请号：US12945217
申请日：2010-11-12
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。
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公开(公告)号：US20100141816A1
公开(公告)日：2010-06-10
申请号：US12703848
申请日：2010-02-11
IPC分类号： H04N5/335 , H01L27/148 , H01L31/18
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。
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公开(公告)号：US20070210395A1
公开(公告)日：2007-09-13
申请号：US11677645
申请日：2007-02-22
IPC分类号： H01L27/14
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。
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9.发明申请SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR THE SAME, AND IMAGING APPARATUS 有权固态成像装置，其制造方法和成像装置公开(公告)号：US20090189235A1
公开(公告)日：2009-07-30
申请号：US12339941
申请日：2008-12-19
申请人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
发明人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
IPC分类号： H01L31/10 , H01L31/18 , H01L31/0232
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.
摘要翻译： 具有光电转换入射光的受光部的固体摄像装置具备形成在受光部的受光面上的绝缘膜和形成在绝缘膜上的负固定电荷的膜。 在光接收部的受光面侧形成有空穴积聚层。 形成有外围电路的外围电路部分设置在光接收部分的一侧。 绝缘膜形成在外围电路部分的表面和具有负固定电荷的膜之间，使得从外围电路部分的表面到具有负固定电荷的膜的距离大于距离光的表面的距离 接收部分电影有负固定费用。
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10.发明授权Solid state imaging device, with suppressed dark current, method of manufacturing, and imaging apparatus 有权具有抑制暗电流的固态成像装置，制造方法和成像装置公开(公告)号：US08946840B2
公开(公告)日：2015-02-03
申请号：US12977766
申请日：2010-12-23
申请人： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
发明人： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
IPC分类号： H01L31/02 , H01L27/146
CPC分类号： H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
摘要： A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
摘要翻译： 具有执行入射光的光电转换的光感测部的固态成像装置包括：形成在感光部的受光面上的绝缘层; 在绝缘层上形成具有负电荷的层; 以及形成在光检测部的光接收表面上的空穴积聚层。
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