Exposure method and device manufacturing method using the same
    1.
    发明授权
    Exposure method and device manufacturing method using the same 失效
    曝光方法及使用其的装置制造方法

    公开(公告)号:US06828085B2

    公开(公告)日:2004-12-07

    申请号:US09391633

    申请日:1999-09-07

    IPC分类号: G03F700

    CPC分类号: G03F7/2022 G03F7/70466

    摘要: A method of producing a semiconductor chip includes (1) a first exposure step for exposing a device range inside a chip on a substrate, to a repetition pattern including a line and a space, wherein an exposure region of the repetition pattern has a size greater than the device range inside the chip, and (2) a second exposure step for exposing the device range inside the chip on the substrate, to a pattern which includes (i) a first line being parallel to the line of the repetition pattern and having substantially the same linewidth as that of the line or a first space being parallel to the space of the repetition pattern and having substantially the same width, and (ii) a second line of a width larger than the line of the repetition pattern or a second space of a width larger than the space of the repetition pattern. The first line overlaps with a portion of lines of the repetition pattern, or the first space overlaps with a portion of spaces of the repetition pattern. Also, the first and second exposure steps are carried out without a developing step interposed therebetween.

    摘要翻译: 一种制造半导体芯片的方法包括:(1)第一曝光步骤,用于将衬底上的芯片内的器件范围曝光到包括线和空间的重复图案,其中重复图案的曝光区域具有更大的尺寸 (2)第二曝光步骤,用于将衬底内的芯片内部的器件范围曝光到包括(i)第一线平行于重复图案的线并且具有 基本上与线的线宽相同或第一空间平行于重复图案的空间并且具有基本上相同的宽度,以及(ii)宽度大于重复图案的线的第二线或第二线 宽度大于重复图案的空间的空间。 第一行与重复图案的一部分线重叠,或者第一空间与重复图案的空间的一部分重叠。 此外,第一曝光步骤和第二曝光步骤不间断地进行显影步骤。

    SOLID-STATE IMAGING DEVICE
    2.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号:US20110157440A1

    公开(公告)日:2011-06-30

    申请号:US13045775

    申请日:2011-03-11

    IPC分类号: H04N5/335

    摘要: To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.

    摘要翻译: 为了控制放大时在阱中产生的电位分布并减小放大型固态成像装置中的阴影,本发明的放大型固态成像装置包括多个图像元素,每个图像元素包括光电 形成在第一导电型衬底内的第二导电类型共同阱中的转换元件,其中多个阱触点设置在像素阵列区域内。

    Image sensing apparatus
    4.
    发明授权
    Image sensing apparatus 失效
    影像传感装置

    公开(公告)号:US07639295B2

    公开(公告)日:2009-12-29

    申请号:US11289614

    申请日:2005-11-30

    IPC分类号: H04N3/14 H04N5/335

    摘要: An image sensing apparatus provided with a plurality of image sensing elements each including a plurality of photoelectric conversion sections and an adding circuit adapted to add signals from the plurality of photoelectric conversion sections to obtain a one-pixel signal, wherein the adding circuit adds the signals obtained by the addition are arranged at equal intervals in an area extending over the plurality of image sensing elements.

    摘要翻译: 一种具有多个图像感测元件的图像感测装置,每个图像感测元件包括多个光电转换部分和一个加法电路,适于从多个光电转换部分添加信号以获得一个像素信号,其中加法电路将信号 通过加法获得的区域以相等的间隔布置在多个图像感测元件上延伸的区域中。

    Solid-state imaging device
    5.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US07616355B2

    公开(公告)日:2009-11-10

    申请号:US11104538

    申请日:2005-04-13

    IPC分类号: H04N1/04

    摘要: To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.

    摘要翻译: 为了控制放大时在阱中产生的电位分布并减小放大型固态成像装置中的阴影,本发明的放大型固态成像装置包括多个图像元素,每个图像元素包括光电 形成在第一导电型衬底内的第二导电类型共同阱中的转换元件,其中多个阱触点设置在像素阵列区域内。

    Photoelectric conversion apparatus which avoids certain shading effects
    7.
    发明授权
    Photoelectric conversion apparatus which avoids certain shading effects 有权
    避免某些阴影效应的光电转换装置

    公开(公告)号:US07221397B1

    公开(公告)日:2007-05-22

    申请号:US09161294

    申请日:1998-09-28

    申请人: Tetsunobu Kochi

    发明人: Tetsunobu Kochi

    IPC分类号: H04N3/14

    摘要: In order to solve the problem in which voltages Vsig1 read in units of rows have differences to cause vertical shading, thereby degrading image quality, and the problem in which the dynamic ranges of source follower circuits are different in units of rows because finite resistances are distributed in the power supply lines, a photoelectric conversion apparatus includes photoelectric conversion portions placed in a plurality of rows, an amplification section including a load section arranged in units of vertical output lines to amplify signal charges accumulated in the photoelectric conversion portions placed in a plurality of rows, a vertical scanning section for sequentially scanning signals amplified by the amplification section to read the signals onto the vertical output lines, and a horizontal scanning section for sequentially scanning the signals amplified by the amplification section to read the signals onto horizontal output lines, wherein the load sections are located on a side vertically opposite to the direction of signal output from the amplification section.

    摘要翻译: 为了解决以行为单位读取的电压Vsig1具有差异导致垂直阴影的问题,从而降低图像质量,以及源极跟随器电路的动态范围由于有限电阻分布而以行为单位的问题 在电源线中,光电转换装置包括放置在多行中的光电转换部分,放大部分包括以垂直输出线为单位布置的负载部分,以放大多个光电转换部分中累积的信号电荷 行,垂直扫描部分,用于顺序地扫描由放大部分放大的信号,以将信号读取到垂直输出线;以及水平扫描部分,用于顺序扫描由放大部分放大的信号,以将信号读取到水平输出线上,其中 负载部分位于侧面 e垂直相对于从放大部分输出的信号的方向。

    Solid-state imaging apparatus comprising reference electric power source having the same circuit structure as that of signal amplification means for amplifying a signal from photoelectric conversion element
    9.
    发明授权
    Solid-state imaging apparatus comprising reference electric power source having the same circuit structure as that of signal amplification means for amplifying a signal from photoelectric conversion element 有权
    固态成像装置包括具有与用于放大来自光电转换元件的信号的信号放大装置相同的电路结构的参考电源

    公开(公告)号:US07135668B2

    公开(公告)日:2006-11-14

    申请号:US10887816

    申请日:2004-07-12

    IPC分类号: H01J40/14

    CPC分类号: H04N5/3692 H04N5/361

    摘要: A solid-state imaging device includes a plurality of pixels each including a photoelectric conversion element and a signal amplification element which receives a signal from the photoelectric conversion element to amplify and output the signal, a signal amplifier including a first input terminal which receives the signal from the signal amplification element and a second input terminal into which a reference voltage is input, and a reference electric power supply, which supplies the reference voltage to the second input terminal of the signal amplifier, the reference electric power supply including a circuit configuration equivalent to the signal amplification element.

    摘要翻译: 固态成像装置包括多个像素,每个像素包括光电转换元件和信号放大元件,信号放大元件接收来自光电转换元件的信号以放大和输出信号;信号放大器,包括接收信号的第一输入端 从信号放大元件和输入基准电压的第二输入端子和将参考电压提供给信号放大器的第二输入端的参考电源,该参考电源包括电路配置等效电路 到信号放大元件。

    Image sensor, multi-chip module type image sensor and contact image sensor

    公开(公告)号:US20060197006A1

    公开(公告)日:2006-09-07

    申请号:US11348317

    申请日:2006-02-07

    申请人: Tetsunobu Kochi

    发明人: Tetsunobu Kochi

    IPC分类号: H01L27/00

    摘要: The invention is to suppress a loss in image quality resulting from a sensitivity difference among different colors and to suppress an increase in a chip area. The invention provides for example an image sensor including three light detecting element rows respectively having R, G and B color filters on light detecting apertures, in which the light detecting element in the G light detecting element row has a light detecting area larger than that of the light detecting element in other B and R light detecting element rows and centers of gravity of light detecting parts of the light detecting elements in the respective light detecting element rows are arranged with a constant pitch (pitch Q) among the light detecting element rows and in which the G light detecting element row with a larger light detecting area in the light detecting element is not positioned as an end row among the R, G and B light detecting element rows but as a central light detecting element row.