摘要:
A method of producing a semiconductor chip includes (1) a first exposure step for exposing a device range inside a chip on a substrate, to a repetition pattern including a line and a space, wherein an exposure region of the repetition pattern has a size greater than the device range inside the chip, and (2) a second exposure step for exposing the device range inside the chip on the substrate, to a pattern which includes (i) a first line being parallel to the line of the repetition pattern and having substantially the same linewidth as that of the line or a first space being parallel to the space of the repetition pattern and having substantially the same width, and (ii) a second line of a width larger than the line of the repetition pattern or a second space of a width larger than the space of the repetition pattern. The first line overlaps with a portion of lines of the repetition pattern, or the first space overlaps with a portion of spaces of the repetition pattern. Also, the first and second exposure steps are carried out without a developing step interposed therebetween.
摘要:
To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
摘要:
To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
摘要:
An image sensing apparatus provided with a plurality of image sensing elements each including a plurality of photoelectric conversion sections and an adding circuit adapted to add signals from the plurality of photoelectric conversion sections to obtain a one-pixel signal, wherein the adding circuit adds the signals obtained by the addition are arranged at equal intervals in an area extending over the plurality of image sensing elements.
摘要:
To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
摘要:
An image pickup device includes pixels each including a photoelectric conversion unit and a transfer switch for transferring a photoelectric conversion signal generated by the photoelectric conversion unit, and a driver for applying a pulse to the transfer switch a plurality of times when the signal generated by the photoelectric conversion unit is transferred via the transfer switch.
摘要:
In order to solve the problem in which voltages Vsig1 read in units of rows have differences to cause vertical shading, thereby degrading image quality, and the problem in which the dynamic ranges of source follower circuits are different in units of rows because finite resistances are distributed in the power supply lines, a photoelectric conversion apparatus includes photoelectric conversion portions placed in a plurality of rows, an amplification section including a load section arranged in units of vertical output lines to amplify signal charges accumulated in the photoelectric conversion portions placed in a plurality of rows, a vertical scanning section for sequentially scanning signals amplified by the amplification section to read the signals onto the vertical output lines, and a horizontal scanning section for sequentially scanning the signals amplified by the amplification section to read the signals onto horizontal output lines, wherein the load sections are located on a side vertically opposite to the direction of signal output from the amplification section.
摘要:
An image pickup apparatus having a plurality of pixels; and a color filter array of four colors disposed on the plurality of pixels, wherein the color filter array has a periodicity of two rows×two columns, and colors of four color filters in a periodical unit of two rows×two columns are all different.
摘要:
A solid-state imaging device includes a plurality of pixels each including a photoelectric conversion element and a signal amplification element which receives a signal from the photoelectric conversion element to amplify and output the signal, a signal amplifier including a first input terminal which receives the signal from the signal amplification element and a second input terminal into which a reference voltage is input, and a reference electric power supply, which supplies the reference voltage to the second input terminal of the signal amplifier, the reference electric power supply including a circuit configuration equivalent to the signal amplification element.
摘要:
The invention is to suppress a loss in image quality resulting from a sensitivity difference among different colors and to suppress an increase in a chip area. The invention provides for example an image sensor including three light detecting element rows respectively having R, G and B color filters on light detecting apertures, in which the light detecting element in the G light detecting element row has a light detecting area larger than that of the light detecting element in other B and R light detecting element rows and centers of gravity of light detecting parts of the light detecting elements in the respective light detecting element rows are arranged with a constant pitch (pitch Q) among the light detecting element rows and in which the G light detecting element row with a larger light detecting area in the light detecting element is not positioned as an end row among the R, G and B light detecting element rows but as a central light detecting element row.