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公开(公告)号：US5205904A
公开(公告)日：1993-04-27
申请号：US668950
申请日：1991-03-13
Applicant: Kazuhisa Yamamoto , Kunihiko Takeshige , Tetsuo Taniuchi
Inventor： Kazuhisa Yamamoto , Kunihiko Takeshige , Tetsuo Taniuchi
CPC classification number: G02F1/3558 , G02F1/377
Abstract: A method to fabricate nonlinear optical frequency doubler devices comprised of a process to form periodic tantalum masks on a LiNb.sub.x Ta.sub.1-x O.sub.3 (wherein 0.ltoreq.x.ltoreq.1) crystal substrate, a process to form periodic proton exchanged regions by applying a phosphoric acid treatment, and a process to form an optical waveguide on the surface of said crystal.According to this fabrication method of the present invention, deeper domain-inverted regions can be formed on said crystal surface, and by this, a fundamental wave can be transformed into a harmonic wave at a high efficiency.
Abstract translation: 一种制造非线性光学倍频装置的方法，包括在LiNbxTa1-xO3（其中0
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公开(公告)号：US4951293A
公开(公告)日：1990-08-21
申请号：US354324
申请日：1989-05-19
Applicant: Kazuhisa Yamamoto , Tetsuo Taniuchi
Inventor： Kazuhisa Yamamoto , Tetsuo Taniuchi
CPC classification number: H01S5/02 , G02B6/26 , G02B6/42 , G02F1/377 , G02B2006/12195 , G02B6/4208 , G02B6/4234
Abstract: A visible laser source comprises a sub mount. A semiconductor laser located on the sub mount has an active layer formed at a surface of the semiconductor laser. The active-layer formed surface of the semiconductor laser opposes the sub mount. An optical nonlinear device located on the sub mount has a waveguide formed at a surface of the optical nonlinear device. The waveguide formed surface of the optical nonlinear device opposes the sub mount. The semiconductor laser and the waveguide are directly coupled to each other for direct application of a fundamental wave from the semiconductor laser to the optical nonlinear device.
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公开(公告)号：US5323262A
公开(公告)日：1994-06-21
申请号：US11136
申请日：1993-01-29
Applicant: Kiminori Mizuuchi , Kazuhisa Yamamoto , Tetsuo Taniuchi , Yoichi Sasai
Inventor： Kiminori Mizuuchi , Kazuhisa Yamamoto , Tetsuo Taniuchi , Yoichi Sasai
CPC classification number: G02F1/3558 , G02F1/377
Abstract: A wavelength conversion device exhibiting an excellent wavelength conversion efficiency is provided by forming it in such a manner that an LiTaO.sub.3 substrate is subjected to a proton exchange treatment to form a proton-exchange layer before the proton-exchange layer is subjected to heat treatment to form a domain-inverted structure. Heat treatment is performed at a high temperature rising speed to prevent the thermal diffusion of the proton-exchange layer so that the expansion of the domain-inverted structure to be formed in the proton-exchange layer is restrained. As a result, a higher harmonic wave wavelength conversion device can be provided.
Abstract translation: 通过使LiTaO 3基板进行质子交换处理以形成质子交换层，在质子交换层进行热处理以形成之前，形成具有优异的波长转换效率的波长转换元件 域反转结构。 以高温上升速度进行热处理，以防止质子交换层的热扩散，从而抑制在质子交换层中形成的畴反转结构的膨胀。 结果，可以提供高次谐波波长转换装置。
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4.发明授权
公开(公告)号：US5142596A
公开(公告)日：1992-08-25
申请号：US730442
申请日：1991-07-16
Applicant: Kiminori Mizuuchi , Kazuhisa Yamamoto , Tetsuo Taniuchi
Inventor： Kiminori Mizuuchi , Kazuhisa Yamamoto , Tetsuo Taniuchi
CPC classification number: G02F1/377 , G02B6/1228 , G02B6/305 , G02B6/4206 , G02B2006/1204 , G02B2006/12183 , G02B2006/12195 , G02F1/3525 , G02F2001/374
Abstract: A tapered light wave guide reduced in propagation loss, improved in coupling efficiency and free from the problem of optical damage. An input section, a widthwise tapered coupling section having a depth d2, and a wave guide having a depth d1 are formed on an LiNbO.sub.3 substrate. A depthwise tapered section in which the depth is changed from d2 to d1 is provided to connect the widthwise tapered coupling section having constant depth d2 and the wave guide, whereby a reduction in light propagation efficiency due to optical damage is prevented.
Abstract translation: 锥形光波导减少了传播损耗，提高了耦合效率，并且没有光学损伤的问题。 在LiNbO 3衬底上形成输入部分，具有深度d2的宽度方向的锥形耦合部分和具有深度d1的波导管。 设置深度从d2变为d1的深度渐缩部分，以连接具有恒定深度d2的宽度方向的锥形联接部分和波导，从而防止由光学损伤引起的光传播效率的降低。
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公开(公告)号：US5690734A
公开(公告)日：1997-11-25
申请号：US616525
申请日：1996-03-19
Applicant: Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
Inventor： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
CPC classification number: C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1056 , Y10T117/1064
Abstract: A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
Abstract translation: 公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物 单晶体向下移动。
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Patent Agency Ranking
公开(公告)号：US5253259A
公开(公告)日：1993-10-12
申请号：US825124
申请日：1992-01-24
Applicant: Kazuhisa Yamamoto , Tetsuo Taniuchi , Kiminori Mizuuchi
Inventor： Kazuhisa Yamamoto , Tetsuo Taniuchi , Kiminori Mizuuchi
CPC classification number: G02F1/3775 , G02F2001/3546
Abstract: A frequency doubler of the invention employs a nonlinear optical effect of stabilizing the harmonic output from the frequency doubler. The frequency doubler has an LiNbO.sub.3 substrate, domain inverted regions and a waveguide, which are formed on the substrate, and a thin-film heater formed on the waveguide by depositing Ni-Cr. The temperature of the frequency doubler is controlled by applying a current to the thin-film heater so as to heat the frequency doubler. Even if the wavelength of a semiconductor laser is changed due to change in the environmental temperature, the frequency doubler can stably be operated by changing the temperature of the frequency doubler.
Abstract translation: 本发明的倍频器采用稳定来自倍频器的谐波输出的非线性光学效应。 倍频器具有形成在衬底上的LiNbO 3衬底，畴反转区域和波导，以及通过沉积Ni-Cr形成在波导上的薄膜加热器。 通过向薄膜加热器施加电流以加热倍频器来控制倍频器的温度。 即使半导体激光器的波长由于环境温度的变化而变化，倍频器也可以通过改变倍频器的温度来稳定地工作。
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公开(公告)号：US06036775A
公开(公告)日：2000-03-14
申请号：US358066
申请日：1999-07-21
Applicant: Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
Inventor： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
CPC classification number: C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1056 , Y10T117/1064
Abstract: A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
Abstract translation: 公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物 单晶体向下移动。
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公开(公告)号：US5221310A
公开(公告)日：1993-06-22
申请号：US796648
申请日：1991-11-22
Applicant: Kiminori Mizuuchi , Kazuhisa Yamamoto , Tetsuo Taniuchi , Yoichi Sasai
Inventor： Kiminori Mizuuchi , Kazuhisa Yamamoto , Tetsuo Taniuchi , Yoichi Sasai
CPC classification number: G02F1/3558 , G02F1/377
Abstract: A wavelength conversion device exhibiting an excellent wavelength conversion efficiency is provided by forming it in such a manner that an LiTaO.sub.3 substrate is subjected to a proton exchange treatment to form a proton-exchange layer before the proton-exchange layer is subjected to heat treatment to form a domain-inverted structure. Heat treatment is performed at a high temperature rising speed to prevent the thermal diffusion of the proton-exchange layer so that the expansion of the domain-inverted structure to be formed in the proton-exchange layer is restrained. As a result, a higher harmonic wave wavelength conversion device can be provided.
Abstract translation: 通过使LiTaO 3基板进行质子交换处理以形成质子交换层，在质子交换层进行热处理以形成之前，形成具有优异的波长转换效率的波长转换元件 域反转结构。 以高温上升速度进行热处理，以防止质子交换层的热扩散，从而抑制在质子交换层中形成的畴反转结构的膨胀。 结果，可以提供高次谐波波长转换装置。
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公开(公告)号：US5961720A
公开(公告)日：1999-10-05
申请号：US909138
申请日：1997-08-11
Applicant: Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
Inventor： Minoru Imaeda , Akihiko Honda , Katsuhiro Imai , Yuichiro Imanishi , Nobuyuki Kokune , Shoji Sogo , Kazuaki Yamaguchi , Tetsuo Taniuchi
CPC classification number: C30B15/08 , C30B15/00 , C30B29/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1056 , Y10T117/1064
Abstract: A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.
Abstract translation: 公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物 单晶体向下移动。
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公开(公告)号：US5032220A
公开(公告)日：1991-07-16
申请号：US477768
申请日：1990-02-09
Applicant: Kazuhisa Yamamoto , Shigeru Ohmori , Tetsuo Taniuchi
Inventor： Kazuhisa Yamamoto , Shigeru Ohmori , Tetsuo Taniuchi
CPC classification number: G02F1/377 , G02B6/1345 , G02F2202/20
Abstract: When fabricating an optical wavelength by proton exchange method on a substrate of LiNb.sub.x Ta.sub.1-x O.sub.3 (0.ltoreq.x.ltoreq.1), by using Ta.sub.2 O.sub.5 as the protective mask, the edge of the mask becomes smooth and diffusion of impurity from the protective mask into the substrate does not occur during heat treatment, and the propagation loss may be notably reduced. As a result, the efficiency of the frequency doubler may be enhanced.
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