公开(公告)号：US5014132A

公开(公告)日：1991-05-07

申请号：US383179

申请日：1989-07-21

申请人： Tetsuro Kumesawa ,  Yasuo Kanou ,  Osamu Nishima ,  Masaaki Isobe ,  Hiromichi Matsui

发明人： Tetsuro Kumesawa ,  Yasuo Kanou ,  Osamu Nishima ,  Masaaki Isobe ,  Hiromichi Matsui

IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  H04N5/353 ,  H04N5/355 ,  H04N5/359 ,  H04N5/3728

CPC分类号： H01L27/14831

摘要： A CCD imager includes a large number of light receiving sections each having in turn a semiconductor surface region of a second conductivity type, a first semiconductor region of a first conductivity type, a semiconductor region of the second conductivity type and a second semiconductor region of the first conductivity type, vertically. The second semiconductor region is formed by a dual structure of the low concentration semiconductor region and the high concentration semiconductor region. The dual structure provides for shuttering at a lower voltage since the potential barrier along the depth of the light receiving section is no longer affected by the amount of the stored charges, while spreading of the depletion layer at the junction is suppressed by the high concentration semiconductor region.

公开(公告)号：US5892251A

公开(公告)日：1999-04-06

申请号：US892935

申请日：1997-07-15

申请人： Tetsuro Kumesawa ,  Hiromichi Matsui

发明人： Tetsuro Kumesawa ,  Hiromichi Matsui

IPC分类号： H01L29/762 ,  G11C19/28 ,  H01L21/339 ,  H01L27/148 ,  H01L29/768

CPC分类号： H01L29/76816 ,  G11C19/285 ,  H01L27/14831 ,  H01L29/76833

摘要： A charge transferring apparatus comprising, e.g., a buried type charge coupled device in which a pair of transfer electrodes located at the most downstream point of a charge transfer direction is driven by a drive pulse other than that for any other pair of transfer electrodes and a potential well formed at the pair of the transfer electrodes located at the most downstream point is made shallower than that at any other pair of transfer electrodes allowing the output dynamic range of a charge transfer device to be increased for improving the output quality.

摘要翻译： 一种电荷转移装置，其包括例如掩埋型电荷耦合器件，其中位于电荷转移方向的最下游点的一对转移电极由不同于任何另一对转移电极的驱动脉冲驱动， 在位于最下游点的一对转移电极处良好形成的电位比在任何另一对转移电极处的电位更浅，允许增加电荷转移装置的输出动态范围以提高输出质量。

公开(公告)号：US5289022A

公开(公告)日：1994-02-22

申请号：US882121

申请日：1992-05-13

申请人： Tetsuya Iizuka ,  Naoki Nishi ,  Tetsuro Kumesawa

发明人： Tetsuya Iizuka ,  Naoki Nishi ,  Tetsuro Kumesawa

IPC分类号： H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H01L29/78 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14831

摘要： A CCD shift register which is improved in the transfer efficiency with a minimal decrease in the amount of electric charge that can be handled. The CCD shift register has an array of transfer electrodes, each comprising a pair of storage and transfer gate electrodes, which are formed on a semiconductor substrate through a gate insulator. A semiconductor region under each storage gate electrode is divided into a plurality of subregions by using impurities.

摘要翻译： 一种CCD移位寄存器，其传输效率得到提高，可以处理的电荷量的减少最小。 CCD移位寄存器具有传输电极阵列，每个传输电极包括一对存储和传输栅极电极，其通过栅极绝缘体形成在半导体衬底上。 每个存储栅电极下方的半导体区域通过使用杂质被分成多个子区域。

公开(公告)号：US07709863B2

公开(公告)日：2010-05-04

申请号：US11243910

申请日：2005-10-04

申请人： Tetsuro Kumesawa

发明人： Tetsuro Kumesawa

IPC分类号： H01L27/148

CPC分类号： H04N5/2355 ,  H01L27/14601 ,  H01L27/14643 ,  H01L27/14806 ,  H04N5/35527 ,  H04N5/3728

摘要： A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.

摘要翻译： 获得γ特性并且提供动态范围的放大的固态成像装置。 本发明的固态成像装置包括垂直溢出功能，其特征在于，从曝光开始到曝光结束的期间，半导体基板的电位从高电位向低电位变化为阶梯式 。

公开(公告)号：US08426896B2

公开(公告)日：2013-04-23

申请号：US13170779

申请日：2011-06-28

申请人： Tetsuro Kumesawa

发明人： Tetsuro Kumesawa

IPC分类号： H01L27/148

CPC分类号： H04N5/2355 ,  H01L27/14601 ,  H01L27/14643 ,  H01L27/14806 ,  H04N5/35527 ,  H04N5/3728

摘要： A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.

摘要翻译： 获得伽马特性并且提供动态范围的放大的固态成像装置。 本发明的固态成像装置包括垂直溢出功能，其特征在于，从曝光开始到曝光结束的期间，半导体基板的电位从高电位向低电位变化为阶梯式 。

公开(公告)号：US20110253882A1

公开(公告)日：2011-10-20

申请号：US13170779

申请日：2011-06-28

申请人： Tetsuro Kumesawa

发明人： Tetsuro Kumesawa

IPC分类号： H01L27/146

CPC分类号： H04N5/2355 ,  H01L27/14601 ,  H01L27/14643 ,  H01L27/14806 ,  H04N5/35527 ,  H04N5/3728

摘要： A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.

摘要翻译： 获得γ特性并且提供动态范围的放大的固态成像装置。 本发明的固态成像装置包括垂直溢出功能，其特征在于，从曝光开始到曝光结束的期间，半导体基板的电位从高电位向低电位变化为阶梯式 。

公开(公告)号：US07977710B2

公开(公告)日：2011-07-12

申请号：US12723319

申请日：2010-03-12

申请人： Tetsuro Kumesawa

发明人： Tetsuro Kumesawa

IPC分类号： H01L27/148

CPC分类号： H04N5/2355 ,  H01L27/14601 ,  H01L27/14643 ,  H01L27/14806 ,  H04N5/35527 ,  H04N5/3728

摘要： A solid state imaging device in which Υ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.

摘要翻译： 一种固态成像装置，其中＆Ugr; 获得特征并提供动态范围的放大。 本发明的固态成像装置包括垂直溢出功能，其特征在于，从曝光开始到曝光结束的期间，半导体基板的电位从高电位向低电位变化为阶梯式 。

公开(公告)号：US5796432A

公开(公告)日：1998-08-18

申请号：US591948

申请日：1996-01-23

申请人： Mamoru Iesaka ,  Tetsuro Kumesawa

发明人： Mamoru Iesaka ,  Tetsuro Kumesawa

IPC分类号： H04N5/359 ,  H04N5/369 ,  H04N5/3722 ,  H04N5/335

CPC分类号： H04N5/3722 ,  H04N5/3595 ,  H04N5/3698

摘要： A solid state imaging device and method of operating the same includes an imaging section for converting incident light into a signal charge which is temporarily stored in a storage section before being read out. A vertical transfer register extends from an imaging section to a storage section. A transfer clock pulse is applied to a portion of the vertical transfer register disposed in the storage section such that the potential of the vertical transfer register in the storage section is deeper than that in the imaging section. Excess charge is transferred to a smear drain section. According to an alternate feature, the potential of the vertical transfer register within either the imaging section or the storage section is maintained constant. A further feature makes use of two drain regions disposed at respective distal ends of the imaging section and the storage section.

摘要翻译： 固态成像装置及其操作方法包括：成像部分，用于将入射光转换成在被读出之前临时存储在存储部分中的信号电荷。 垂直传送寄存器从成像部分延伸到存储部分。 传送时钟脉冲被施加到设置在存储部分中的垂直传送寄存器的一部分，使得存储部分中的垂直传送寄存器的电位比成像部分的电位更深。 过量电荷转移到污迹排放部分。 根据替代特征，垂直传送寄存器在成像部分或存储部分内的电位保持恒定。 进一步的特征是利用设置在成像部分和存储部分的各个远端处的两个漏极区域。

公开(公告)号：US4794279A

公开(公告)日：1988-12-27

申请号：US50400

申请日：1987-05-18

申请人： Michio Yamamura ,  Hiroshi Terakawa ,  Tetsuro Kumesawa ,  Takashi Fukusyo

发明人： Michio Yamamura ,  Hiroshi Terakawa ,  Tetsuro Kumesawa ,  Takashi Fukusyo

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3728 ,  H03K3/42 ,  H01L27/14 ,  H01L29/78 ,  H04N3/14

CPC分类号： H01L27/14831

摘要： A solid state imager device having a substrate of a first conductivity type, a charge storage area of a second conductivity type formed on the substrate of the first conductivity type, and a forward electrode formed on the charge storage area of the second conductivity type through an insulating layer, and the forward electrode is alternately supplied with a first voltage for accumulating charges of the first conductivity type on a boundary between the charge storage area of the second conductivity type and the insulating layer and a second voltage so as to extend the depletion layer formed beneath the charge storage area of the second conductivity type.

摘要翻译： 一种固态成像装置，具有第一导电类型的基板，形成在第一导电类型的基板上的第二导电类型的电荷存储区域，以及形成在第二导电类型的电荷存储区域上的正电极， 绝缘层，并且正电极交替地被提供有用于在第二导电类型的电荷存储区域和绝缘层之间的边界上积累第一导电类型的电荷的第一电压和第二电压，以便延伸耗尽层 形成在第二导电类型的电荷存储区域下方。

公开(公告)号：US08115236B2

公开(公告)日：2012-02-14

申请号：US13050596

申请日：2011-03-17

申请人： Tetsuro Kumesawa

发明人： Tetsuro Kumesawa

IPC分类号： H01L27/148

CPC分类号： H04N5/2355 ,  H01L27/14601 ,  H01L27/14643 ,  H01L27/14806 ,  H04N5/35527 ,  H04N5/3728

摘要： A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.

摘要翻译： 获得γ特性并且提供动态范围的放大的固态成像装置。 固态成像装置包括垂直溢出功能，并且具有在从曝光开始到曝光结束的时段期间半导体衬底的电位以逐步的方式从高电位变为低电位的特征。