公开(公告)号：US06474986B2

公开(公告)日：2002-11-05

申请号：US09832909

申请日：2001-04-12

申请人： Tetsuya Oda ,  Mitsuhiro Tanoue ,  Toshichika Takei ,  Eiichi Shirakawa

发明人： Tetsuya Oda ,  Mitsuhiro Tanoue ,  Toshichika Takei ,  Eiichi Shirakawa

IPC分类号： F27D1502

CPC分类号： H01L21/67109 ,  F27D9/00

摘要： In a heat processing apparatus structured to heat a wafer on a hot plate, a black plate at least the rear face of which practically has a color with a JIS lightness of 0V to 4V is positioned above the hot plate. Moreover, cooling air is blown out from nozzles onto the rear face of the hot plate. Thus, the temperature of the hot plate can be cooled rapidly.

摘要翻译： 在构成为对热板上的晶片进行加热的热处理装置中，至少其背面实际上具有JIS亮度为0V〜4V的颜色的黑板位于热板上方。 此外，冷却空气从喷嘴吹出到热板的后表面上。 因此，可以快速冷却热板的温度。

公开(公告)号：US06450805B1

公开(公告)日：2002-09-17

申请号：US09634299

申请日：2000-08-09

申请人： Tetsuya Oda ,  Mitsuhiro Tanoue ,  Toshichika Takei

发明人： Tetsuya Oda ,  Mitsuhiro Tanoue ,  Toshichika Takei

IPC分类号： F27D1502

CPC分类号： F27D15/02 ,  F27B17/0025 ,  H01L21/67109

摘要： In a heat processing apparatus for heating a wafer on a hot plate, a black plate having at least a rear face practically having a color with a JIS lightness of 0V to 4V is positioned above the hot plate. Moreover, cooling air is blown out from nozzles onto the rear face of the hot plate so that the temperature of the hot plate can be cooled rapidly.

摘要翻译： 在用于加热热板上的晶片的加热装置中，至少具有JIS亮度为0V至4V的颜色的至少后面的黑板位于热板上方。 此外，冷却空气从喷嘴吹出到热板的后表面，使得热板的温度可以快速冷却。

公开(公告)号：US06815647B2

公开(公告)日：2004-11-09

申请号：US10350012

申请日：2003-01-24

申请人： Mitsuhiro Tanoue ,  Tetsuya Oda

发明人： Mitsuhiro Tanoue ,  Tetsuya Oda

IPC分类号： H05B368

CPC分类号： H01L21/67109

摘要： A heat treatment unit comprises a heat plate made of aluminum nitride which is excellent in heat conductivity and strength inside thereof. The entire circumference of the heat plate is supported by a supporting member which is excellent in thermal insulation. The heat treatment unit is equipped with a nozzle for blowing dry air against the reverse side of the heat plate. When a temperature of the heat plate is lowered, the dry air is blown from the nozzle, thereby quickly lowering the temperature of the heat plate.

摘要翻译： 热处理单元包括由氮化铝制成的加热板，其内部的导热性和强度优异。 加热板的整个圆周由绝热性优异的支撑构件支撑。 热处理单元配备有用于将干燥空气吹向加热板的背面的喷嘴。 当加热板的温度降低时，干燥空气从喷嘴吹出，从而快速降低加热板的温度。

公开(公告)号：US06534750B1

公开(公告)日：2003-03-18

申请号：US09672878

申请日：2000-09-29

申请人： Mitsuhiro Tanoue ,  Tetsuya Oda

发明人： Mitsuhiro Tanoue ,  Tetsuya Oda

IPC分类号： H05B368

CPC分类号： H01L21/67109

摘要： A heat treatment unit comprises a heat plate made of aluminum nitride which is excellent in heat conductivity and strength inside thereof. The entire circumference of the heat plate is supported by a supporting member which is excellent in thermal insulation. The heat treatment unit is equipped with a nozzle for blowing dry air against the reverse side of the heat plate. When a temperature of the heat plate is lowered, the dry air is blown from the nozzle, thereby quickly lowering the temperature of the heat plate.

摘要翻译： 热处理单元包括由氮化铝制成的加热板，其内部的导热性和强度优异。 加热板的整个圆周由绝热性优异的支撑构件支撑。 热处理单元配备有用于将干燥空气吹向加热板的背面的喷嘴。 当加热板的温度降低时，干燥空气从喷嘴吹出，从而快速降低加热板的温度。

公开(公告)号：US06551448B2

公开(公告)日：2003-04-22

申请号：US09800465

申请日：2001-03-08

申请人： Yasuhiro Kuga ,  Mitsuhiro Tanoue ,  Kouichirou Tanaka

发明人： Yasuhiro Kuga ,  Mitsuhiro Tanoue ,  Kouichirou Tanaka

IPC分类号： H05H100

CPC分类号： H01L21/68728 ,  H01L21/67098

摘要： The present invention is an apparatus for operating heat processing to a substrate, and comprises a heating plate to mount and heat the substrate thereon, a supporting member to support a lower surface of a periphery of the heating plate, and a supporter to support the supporting member. The supporting member has a stepped portion to surround an outer peripheral surface of the heating plate. The supporting member is fixed to the supporter by a fixing member penetrating through the stepped portion in a vertical direction. The fixing member is provided between an inner peripheral surface of the stepped portion and the outer peripheral surface of the heating plate. According to the present invention, since the fixing member is provided between the outer peripheral surface of the heating plate and the inner peripheral surface of the stepped portion, the supporting member does not exist between the fixing member and the outer peripheral surface of the heating plate. Therefore, even when the heating plate is cooled, a part of the supporting member does not shrink toward the heating plate side, contrary to the conventional art. Thus, it is prevented that the part of the supporting member partially compresses the heating plate to distort the heating plate.

摘要翻译： 本发明是一种用于对基板进行热处理的装置，包括：加热板，用于安装和加热基板;支撑部件，用于支撑加热板的周边的下表面;以及支撑件，用于支撑支撑 会员。 支撑构件具有围绕加热板的外周面的台阶部。 支撑构件通过在垂直方向上穿过台阶部分的固定构件固定到支撑件。 固定部件设置在阶梯部的内周面和加热板的外周面之间。根据本发明，由于固定部件设置在加热板的外周面与内周面之间 在台阶部分之间，支撑部件不存在于固定部件和加热板的外周面之间。 因此，与传统技术相反，即使加热板被冷却，支撑部件的一部分也不朝向加热板侧收缩。 因此，防止支撑部件的一部分部分地压缩加热板以使加热板变形。

公开(公告)号：US07836845B2

公开(公告)日：2010-11-23

申请号：US11734384

申请日：2007-04-12

申请人： Mitsuhiro Tanoue ,  Suguru Enokida

发明人： Mitsuhiro Tanoue ,  Suguru Enokida

IPC分类号： B05C13/02 ,  B05C11/00 ,  B05B15/12 ,  B65G49/07

CPC分类号： H01L21/68707 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67769 ,  Y10S414/136 ,  Y10S414/14 ,  Y10S414/141

摘要： The present invention provides a substrate carrying and processing apparatus which is intended to reduce the size of the space for storing substrates in each substrate storing section as much as possible so as to downsize the apparatus and increase the number of substrates to be stored therein as well as to enhance the throughput. The substrate carrying and processing apparatus comprises a carrier block S1 which is adapted to position carriers 20 each receiving wafers W therein, a processing block S2 including processing units U1 to U4, 31 used for processing each wafer, a main arms A1 adapted to transfer each wafer to each processing unit, a rack unit U5 which is disposed between the carrier block and the processing block and able to store wafers to be processed, and a transfer arm D adapted to transfer each wafer to the rack unit. The rack unit has openings 11, 12 to which the main arm and the transfer arm can transfer each substrate along two directions crossing to each other, and includes a plurality of placing shelves with a space therebetween and adapted to support a wafer. The main arms and transfer arms are configured such that they can be advanced into and retracted from the substrate storing section and such that they can be overlapped to the corresponding placing shelf in the vertical direction, when viewed in the horizontal direction.

摘要翻译： 本发明提供了一种基板承载和处理装置，其旨在尽可能地减小用于在每个基板存储部分中存储基板的空间的尺寸，以便减小装置的尺寸并增加要存储在其中的基板的数量 以提高吞吐量。 衬底承载和处理设备包括载体块S1，其适于将载体20定位在其中接收晶片W的处理块S2，包括用于处理每个晶片的处理单元U1至U4,31的处理块S2，适于传送每个晶片的主臂A1 晶片连接到每个处理单元，设置在载体块和处理块之间并且能够存储要处理的晶片的齿条单元U5和适于将每个晶片传送到齿条单元的转移臂D。 齿条单元具有开口11,12，主臂和传送臂可以沿着彼此交叉的两个方向传送每个基板，并且包括多个搁置架，其间具有空间并且适于支撑晶片。 主臂和传送臂被构造成使得它们可以被推进到基板存储部分中并从基板收纳部分缩回，并且当从水平方向观察时，它们可以在垂直方向上与相应的搁置架重叠。

公开(公告)号：US06185370B2

公开(公告)日：2001-02-06

申请号：US09392639

申请日：1999-09-09

申请人： Eiichi Sekimoto ,  Mitsuhiro Tanoue

发明人： Eiichi Sekimoto ,  Mitsuhiro Tanoue

IPC分类号： A01G1306

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： An exhaust hole has a size covering not only a first region above a hot plate but also a second region surrounding the first region. A plate ember with a plurality of openings is disposed at the mouth of the exhaust hole. The exhaust hole exhausts air from the first region and the second region, even when the heat processing is not performed. Therefore, a solvent volatilized in the first region is also exhausted from the second region and will not leak outside the apparatus.

摘要翻译： 排气孔的尺寸不仅覆盖热板上方的第一区域，而且覆盖围绕第一区域的第二区域。 具有多个开口的板坯被设置在排气孔的口部。 即使不进行热处理，排气孔也从第一区域和第二区域排出空气。 因此，在第一区域中挥发的溶剂也从第二区域排出，并且不会泄漏到设备外部。

公开(公告)号：US07661894B2

公开(公告)日：2010-02-16

申请号：US11523015

申请日：2006-09-19

申请人： Nobuaki Matsuoka ,  Mitsuhiro Tanoue ,  Shinji Okada

发明人： Nobuaki Matsuoka ,  Mitsuhiro Tanoue ,  Shinji Okada

IPC分类号： G03D5/00 ,  G03B27/32 ,  B05C11/02 ,  B05C13/02

CPC分类号： H01L21/67178 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67745

摘要： A processing block S2 includes unit blocks, a BCT layer B3, COT layer B4 and TCT layer B5, for forming coating films, and further includes DEV layers B1, B2 layered with the unit blocks B3, B4, B5 and used as unit blocks for a developing process. Beside the unit blocks B1 to B5, a group G of transfer sections comprising transfer sections adapted to transfer each wafer W with each main arm A1 to A5 of the unit block B1 to B5 and hydrophobicity rendering units adapted to provide a hydrophobicity rendering process to the wafer W is provided. The wafer W is transferred by a transfer arm D between the transfer sections and the hydrophobicity rendering units. In this case, since it is not necessary to transfer the wafer W to the hydrophobicity rendering unit by using, for example, a main arm A4 of a COT layer B4, the load on the arm A4 can be reduced, thereby enhancing the carrying throughput.

摘要翻译： 处理块S2包括用于形成涂膜的单元块，BCT层B3，COT层B4和TCT层B5，并且还包括与单元块B3，B4，B5分层的DEV层B1，B2，并用作单元块 一个发展过程。 除了单元块B1至B5之外，传送部分组G包括适于将单元块B1至B5的每个主臂A1至A5传送每个晶片W的转移部分和适用于向单元块B1至B5提供疏水性渲染处理的疏水性渲染单元 提供晶片W。 晶片W在转印部分和疏水性渲染单元之间由转印臂D转印。 在这种情况下，由于不需要使用例如COT层B4的主臂A4将晶片W转移到疏水性呈现单元，所以能够降低臂A4上的负荷，从而提高承载量 。

公开(公告)号：US20070089673A1

公开(公告)日：2007-04-26

申请号：US11523015

申请日：2006-09-19

申请人： Nobuaki Matsuoka ,  Mitsuhiro Tanoue ,  Shinji Okada

发明人： Nobuaki Matsuoka ,  Mitsuhiro Tanoue ,  Shinji Okada

IPC分类号： B05C11/00 ,  B05C13/00 ,  B05D3/00

CPC分类号： H01L21/67178 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67745

摘要： A processing block S2 includes unit blocks, a BCT layer B3, COT layer B4 and TCT layer B5, for forming coating films, and further includes DEV layers B1, B2 layered with the unit blocks B3, B4, B5 and used as unit blocks for a developing process. Beside the unit blocks B1 to B5, a group G of transfer sections comprising transfer sections adapted to transfer each wafer W with each main arm A1 to A5 of the unit block B1 to B5 and hydrophobicity rendering units adapted to provide a hydrophobicity rendering process to the wafer W is provided. The wafer W is transferred by a transfer arm D between the transfer sections and the hydrophobicity rendering units. In this case, since it is not necessary to transfer the wafer W to the hydrophobicity rendering unit by using, for example, a main arm A4 of a COT layer B4, the load on the arm A4 can be reduced, thereby enhancing the carrying throughput.

摘要翻译： 处理块S2包括用于形成涂膜的单元块，BCT层B 3，COT层B 4和TCT层B 5，并且还包括与单元块B 3，B 4分层的DEV层B 1，B 2 ，B 5并用作开发过程的单位块。 在单元块B 1至B 5之外，传送部分组G包括适于将单元块B1至B5的每个主臂A 1至A 5传送每个晶片W的传送部分和适于提供的单元块B 1至B 5的疏水性渲染单元 提供了对晶片W的疏水性渲染过程。 晶片W在转印部分和疏水性渲染单元之间由转印臂D转印。 在这种情况下，由于不需要使用例如COT层B 4的主臂A 4将晶片W转移到疏水性呈现单元，所以能够降低臂A 4上的负荷，从而提高 携带吞吐量。