High Voltage Converter Power Stage

    公开(公告)号:US20250080108A1

    公开(公告)日:2025-03-06

    申请号:US18461648

    申请日:2023-09-06

    Abstract: Described embodiments include a power driver circuit having a first transistor coupled between an input voltage terminal and an intermediate terminal, and having a first control terminal. A second transistor is coupled between the intermediate terminal and a switching terminal, and has a second control terminal coupled to an output of a gate drive circuit. A first diode has a first anode coupled to the input voltage terminal, and a first cathode coupled to the first control terminal through a resistor. A first voltage clamp circuit is coupled between the first control terminal and the intermediate terminal. A second voltage clamp circuit is coupled between the first control terminal and the switching terminal. A second diode is coupled between the first control terminal and a voltage supply terminal.

    Wide voltage gate driver using low gate oxide transistors

    公开(公告)号:US12218655B2

    公开(公告)日:2025-02-04

    申请号:US18126080

    申请日:2023-03-24

    Abstract: A gate driver circuit includes first through third transistors, a first voltage clamp, and control logic. The first transistor has a first control input and first and second current terminals. The first current terminal couples to a first voltage terminal. The first voltage clamp couples between the first voltage terminal and the first control input. The second transistor couples between the first control input and the second voltage terminal. The third transistor couples between the first control input and the second voltage terminal. The third transistor is smaller than the second transistor. The control logic is configured to turn on both the second and third transistors to thereby turn on the first transistor, and the first control logic configured to turn off the second transistor after the first transistor turns on while maintaining in an on-state the third transistor to maintain the first transistor in the on-state.

    Bandgap circuitry
    3.
    发明授权

    公开(公告)号:US12001234B1

    公开(公告)日:2024-06-04

    申请号:US18150914

    申请日:2023-01-06

    CPC classification number: G05F3/205 G05F3/227 G05F3/267 G05F3/30

    Abstract: In a described example, a circuit includes a first bipolar junction transistor (BJT) having a first base, a first emitter and a first collector. A second BJT has a second base, a second emitter and a second collector, in which the first collector is coupled to the second collector. A bandgap core circuit has first and second core inputs and a bandgap output. The first core input is coupled to the first emitter, the second core input is coupled to the second emitter, and the first and second bases are coupled to the bandgap output.

    WIDE VOLTAGE GATE DRIVER USING LOW GATE OXIDE TRANSISTORS

    公开(公告)号:US20230246640A1

    公开(公告)日:2023-08-03

    申请号:US18126080

    申请日:2023-03-24

    CPC classification number: H03K17/102

    Abstract: A gate driver circuit includes first through third transistors, a first voltage clamp, and control logic. The first transistor has a first control input and first and second current terminals. The first current terminal couples to a first voltage terminal. The first voltage clamp couples between the first voltage terminal and the first control input. The second transistor couples between the first control input and the second voltage terminal. The third transistor couples between the first control input and the second voltage terminal. The third transistor is smaller than the second transistor. The control logic is configured to turn on both the second and third transistors to thereby turn on the first transistor, and the first control logic configured to turn off the second transistor after the first transistor turns on while maintaining in an on-state the third transistor to maintain the first transistor in the on-state.

    Wide input voltage low IQ switching converter

    公开(公告)号:US11349393B2

    公开(公告)日:2022-05-31

    申请号:US16996207

    申请日:2020-08-18

    Abstract: A system has an input voltage source, a power stage coupled to the input voltage source, a load coupled to an output node of the power stage and a control circuit, the control circuit implemented on a semiconductor die and including: an error amplifier having a first input, a second input and an output; a voltage divider coupled to the output node and configured to provide an output voltage sense value to the first input of the error amplifier; and a programmable reference voltage circuit with an output coupled to the second input of the error amplifier. The programmable reference voltage circuit includes: a reference voltage source; scaling circuit components between the reference voltage source and the second input of the error amplifier; and a switch between the reference voltage source and the second input of the error amplifier. The control circuit is coupled to the power stage and is configured to generate a control signal for switches of the power stage.

    Wide voltage gate driver using low gate oxide transistors

    公开(公告)号:US11641198B1

    公开(公告)日:2023-05-02

    申请号:US17538953

    申请日:2021-11-30

    Abstract: A gate driver circuit includes first through third transistors, a first voltage clamp, and control logic. The first transistor has a first control input and first and second current terminals. The first current terminal couples to a first voltage terminal. The first voltage clamp couples between the first voltage terminal and the first control input. The second transistor couples between the first control input and the second voltage terminal. The third transistor couples between the first control input and the second voltage terminal. The third transistor is smaller than the second transistor. The control logic is configured to turn on both the second and third transistors to thereby turn on the first transistor, and the first control logic configured to turn off the second transistor after the first transistor turns on while maintaining in an on-state the third transistor to maintain the first transistor in the on-state.

    Dual supply low-side gate driver
    7.
    发明授权

    公开(公告)号:US11532979B2

    公开(公告)日:2022-12-20

    申请号:US17011184

    申请日:2020-09-03

    Abstract: A system including: a first regulator having a first input voltage and a first output voltage; a second regulator having a second input voltage and a second output voltage; a first driver circuit coupled to the first regulator and a switch, wherein the first driver circuit is configured to drive the switch based on the first output voltage; a second driver circuit coupled to the second regulator and the switch, wherein the second driver circuit is configured to drive the switch based on the second output voltage; a driver controller coupled to the first driver circuit and the second driver circuit, wherein the driver controller is configured to select one of the first driver circuit and the second driver circuit to drive the switch based on a control signal; and a switch node coupled to the switch, wherein a switch node voltage at the switch node is a function of the switch being turned on and off.

    Dual supply low-side gate driver
    8.
    发明授权

    公开(公告)号:US10797579B2

    公开(公告)日:2020-10-06

    申请号:US16418613

    申请日:2019-05-21

    Abstract: An automotive system includes a first regulator configured to provide a first output voltage based on a first input voltage level. The system also includes a second regulator configured to provide a second output voltage based on a second input voltage level. The system also includes a driver controller coupled to a first driver circuit and a second driver circuit, wherein the driver controller is configured to select one of the first driver circuit and the second driver circuit to drive a switch based on a control signal. The system also includes a switch node coupled to the switch, wherein a switch node voltage at the switch node is a function of the switch being turned on and off. The system also includes a load coupled to the switch node.

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