公开(公告)号：US20230060695A1

公开(公告)日：2023-03-02

申请号：US17462880

申请日：2021-08-31

Applicant: Texas Instruments Incorporated

Inventor： Abbas Ali ,  Rajni J. Aggarwal ,  Steven J. Adler ,  Eugene C. Davis

IPC: H01L29/06 ,  H01L21/762 ,  H01L21/265

Abstract: An electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. The isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.

公开(公告)号：US20190103471A1

公开(公告)日：2019-04-04

申请号：US15720616

申请日：2017-09-29

Applicant: Texas Instruments Incorporated

Inventor： Umamaheswari Aghoram ,  Pushpa Mahalingam ,  Alexei Sadovnikov ,  Eugene C. Davis

IPC: H01L29/423 ,  H01L29/221 ,  H01L21/02

CPC classification number: H01L29/42336 ,  H01L21/02439 ,  H01L21/02502 ,  H01L21/761 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/221 ,  H01L29/402 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

Abstract: A laterally diffused metal oxide silicon (LDMOS) transistor and a method of making the LDMOS transistor are disclosed. The LDMOS transistor includes a drain drift region formed in a substrate and containing a drain contact region. A gate structure overlies a channel region in the substrate and a first shallow-trench isolation (STI) structure is formed between the drain contact region and the channel region. The first STI structure contains a high-k dielectric and a second STI structure contains silicon dioxide.

公开(公告)号：US20240429275A1

公开(公告)日：2024-12-26

申请号：US18776479

申请日：2024-07-18

Applicant: Texas Instruments Incorporated

Inventor： Abbas Ali ,  Rajni J. Aggarwal ,  Steven J. Adler ,  Eugene C. Davis

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/761 ,  H01L21/762 ,  H01L21/763

Abstract: An electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. The isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.

公开(公告)号：US12087813B2

公开(公告)日：2024-09-10

申请号：US17462880

申请日：2021-08-31

Applicant: Texas Instruments Incorporated

Inventor： Abbas Ali ,  Rajni J. Aggarwal ,  Steven J. Adler ,  Eugene C. Davis

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/761 ,  H01L21/762 ,  H01L21/763

CPC classification number: H01L29/0649 ,  H01L21/26513 ,  H01L21/76286 ,  H01L21/763 ,  H01L21/761

Abstract: An electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. The isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.