Method for Plating Fine Grain Copper Deposit on Metal Substrate
    1.
    发明申请
    Method for Plating Fine Grain Copper Deposit on Metal Substrate 审中-公开
    金属基体上细晶铜沉积方法

    公开(公告)号:US20150197870A1

    公开(公告)日:2015-07-16

    申请号:US14593313

    申请日:2015-01-09

    Inventor: Ali A. Farvid

    Abstract: A method of depositing an oxygen-free electronic copper layer on a metal substrate is provided that includes cleaning a substrate surface, electropolishing the substrate surface activating the substrate surface, depositing nickel on the substrate; and depositing copper on the substrate using a cyanide copper strike bath and a cyanide copper plate bath, where a periodic pulse and a reverse periodic pulse current is applied using a pulse periodic reverse current power supply, where the deposited oxygen-free copper comprises a fine-grained, equiaxed structure having a uniform surface geometry and less than 10% thickness variation across all surfaces.

    Abstract translation: 提供了一种在金属基底上沉积无氧电子铜层的方法,其包括清洗衬底表面,电抛光激活衬底表面的衬底表面,在衬底上沉积镍; 并使用氰化铜冲击浴和氰化物铜板槽在基板上沉积铜,其中使用脉冲周期反向电流电源施加周期性脉冲和反向周期脉冲电流,其中沉积的无氧铜包括细 均匀的等轴结构具有均匀的表面几何形状,并且在所有表面上的厚度变化小于10%。

Patent Agency Ranking