公开(公告)号：US20220140265A1

公开(公告)日：2022-05-05

申请号：US17433232

申请日：2020-02-19

Applicant: THE UNIVERSITY OF TOKYO

Inventor： Junichi TAKEYA ,  Shunichiro WATANABE ,  Mari SASAKI ,  Tatsuyuki MAKITA

IPC: H01L51/05 ,  H01L51/00

Abstract: The present disclosure provides an organic semiconductor single crystal film that can be disposed on a desired substrate and has a thickness thinner than that of a conventional film. The present disclosure is directed to an organic semiconductor device comprising: a substrate; and an organic semiconductor single crystal film on the substrate, wherein an average film thickness of the organic semiconductor single crystal film is 2 to 100 nm, and at least a portion of a surface of the substrate in contact with the organic semiconductor single crystal film is hydrophobic, solvent soluble, non-heat resistant, or a combination thereof.

公开(公告)号：US20240147741A1

公开(公告)日：2024-05-02

申请号：US18278073

申请日：2022-02-24

Applicant: THE UNIVERSITY OF TOKYO ,  DAICEL CORPORATION

Inventor： Junichi TAKEYA ,  Shunichiro WATANABE ,  Shouhei KUMAGAI ,  Xiaozhu WEI ,  Daiji IKEDA ,  Hiroki SATO ,  Yasuyuki AKAI

IPC: H10K19/20 ,  H10K10/46 ,  H10K71/12

CPC classification number: H10K19/20 ,  H10K10/464 ,  H10K10/466 ,  H10K71/12

Abstract: The present disclosure provides an inorganic/organic hybrid complementary semiconductor device that can be manufactured at a lower cost, has excellent long-term stability, has a well-balanced operation between the p-type transistor and the n-type transistor, and operates at a high speed. The present disclosure is related to an inorganic/organic hybrid complementary semiconductor device including a substrate, a p-type organic semiconductor single crystal layer, an n-type amorphous metal oxide inorganic semiconductor layer between the substrate and the single crystal layer, and a protective layer between the single crystal layer and the inorganic semiconductor layer, wherein when viewed from a direction perpendicular to a main surface of the single crystal layer, the single crystal layer is disposed and thus at least a part of the single crystal layer overlaps the inorganic semiconductor layer or the single crystal layer does not overlap the inorganic semiconductor layer, a distance between the single crystal layer and the inorganic semiconductor layer is 1 mm or less, and the inorganic semiconductor layer has a distribution of an oxygen defect amount in a thickness direction in which the oxygen defect amount is larger on the single crystal layer side than on the substrate side.

公开(公告)号：US20230165123A1

公开(公告)日：2023-05-25

申请号：US17905941

申请日：2021-03-10

Applicant: THE UNIVERSITY OF TOKYO

Inventor： Junichi TAKEYA ,  Shunichiro WATANABE ,  Mari SASAKI ,  Tatsuyuki MAKITA

IPC: H10K71/18 ,  H10K10/46 ,  H10K71/80

CPC classification number: H10K71/18 ,  H10K10/474 ,  H10K71/80

Abstract: A method for producing a patterned organic film includes: forming a hydrophobic organic film on a hydrophilic and non-water-soluble first substrate using a coating method, pressing the organic film formed on the first substrate against a convex portion of a stamp having the convex portion and a concave portion, transferring the organic film to the convex portion by applying water or an aqueous solution to an interface between the first substrate and the organic film, and pressing the organic film transferred to the convex portion against a second substrate to transfer the organic film to the second substrate to obtain a patterned organic film, wherein at least one of the organic film and the second substrate is an organic semiconductor.

公开(公告)号：US20240128144A1

公开(公告)日：2024-04-18

申请号：US18277129

申请日：2022-02-24

Applicant: THE UNIVERSITY OF TOKYO ,  DAICEL CORPORATION

Inventor： Junichi TAKEYA ,  Shunichiro WATANABE ,  Shouhei KUMAGAI ,  Xiaozhu WEI ,  Daiji IKEDA ,  Hiroki SATO ,  Yasuyuki AKAI

IPC: H01L23/31 ,  B05D1/00 ,  C23C16/40 ,  C23C16/455 ,  H01L21/56 ,  H01L23/29

CPC classification number: H01L23/3192 ,  B05D1/60 ,  C23C16/403 ,  C23C16/45525 ,  H01L21/56 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3171 ,  B05D2507/00

Abstract: The present disclosure provides a sealing material suitable for a compound having a non-stoichiometric composi263tion. The present disclosure is related to a sealing material for a compound having a non-stoichiometric composition, the sealing material including a polymer layer and an inorganic oxide insulator layer, wherein the polymer layer includes a first polymer layer containing an organic solvent soluble polymer.

公开(公告)号：US20220293874A1

公开(公告)日：2022-09-15

申请号：US17753409

申请日：2020-06-18

Applicant: THE UNIVERSITY OF TOKYO

Inventor： Junichi TAKEYA ,  Shunichiro WATANABE ,  Tatsuyuki MAKITA

IPC: H01L51/10 ,  H01L51/05 ,  H01L51/00

Abstract: The present disclosure provides fine electrodes in which an organic semiconductor does not easily change with time, and which can be applied to manufacturing of a practical integrated circuit of an organic semiconductor device. The present disclosure relates to electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes, wherein a channel length between the electrodes in each set is 200 μm or less, and the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less.

公开(公告)号：US20210328164A1

公开(公告)日：2021-10-21

申请号：US17272585

申请日：2019-09-03

Applicant: The University of Tokyo

Inventor： Junichi TAKEYA ,  Shunichiro WATANABE ,  Yu YAMASHITA ,  Keita YAEGASHI

IPC: H01L51/05 ,  H01L51/00

Abstract: An organic semiconductor element of the present invention includes: an organic semiconductor film formed from single crystal of an organic semiconductor, and a doped layer formed in a surface of the organic semiconductor film. A strain sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which is deformable, and which has the organic semiconductor element formed on one surface thereof. A vibration sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which has flexibility, and which is fixed at one end or both ends thereof, the substrate having the organic semiconductor element formed on the surface of the flexible portion of the substrate.