摘要:
The invention relates to an integrated circuit arrangement with connection contacts for the serial exchange of data and/or signals with external components and apparatuses and with a control apparatus and/or a serial interface for the clocked receiving of data by means of a signal voltage on such a connection contact, which voltage is modulated between at least one low, one middle and one high voltage state. The control apparatus and/or the interface are designed in such a manner that data is sent in a sending mode via the connection contact in that the switching apparatus, after having received a slope changing in particular from the middle voltage state into in particular the higher or the lower voltage state, pulls the voltage state into the in particular opposite lower or higher voltage state. Furthermore, the invention relates to an apparatus and a process for operating such a circuit arrangement.
摘要:
The invention relates to an integrated circuit arrangement with connection contacts for the serial exchange of data and/or signals with external components and apparatuses and with a control apparatus and/or a serial interface for the clocked receiving of data by means of a signal voltage on such a connection contact, which voltage is modulated between at least one low, one middle and one high voltage state. The control apparatus and/or the interface are designed in such a manner that data is sent in a sending mode via the connection contact in that the switching apparatus, after having received a slope changing in particular from the middle voltage state into in particular the higher or the lower voltage state, pulls the voltage state into the in particular opposite lower or higher voltage state. Furthermore, the invention relates to an apparatus and a process for operating such a circuit arrangement.
摘要:
A method and circuitry for checking the programming (P) and deletion (L) operations of memory cells (5) in a nonvolatile memory device (1). Parallel to the programming (P) or deletion (L) operations of the actual memory cells (5) the respective programming or deletion process is carried out on at least one similar checking cell (4.1, 4.2, 4.3), with the programming (P) or deletion (L) operations being less favorable by a defined extent than the programming (P) or deletion (L) operations of the actual memory cells (5). From the content of the checking cell (4.1, 4.2, 4.3) an evaluation device (6) determines whether the programming (P) or deletion (L) operation was successful or not, and a corresponding output signal (ak) indicative thereof is produced.
摘要:
A method and circuitry for checking the programming (P) and deletion (L) operations of memory cells (5) in a nonvolatile memory device (1). Parallel to the programming (P) or deletion (L) operations of the actual memory cells (5) the respective programming or deletion process is carried out on at least one similar checking cell (4.1, 4.2, 4.3), with the programming (P) or deletion (L) operations being less favorable by a defined extent than the programming (P) or deletion (L) operations of the actual memory cells (5). From the content of the checking cell (4.1, 4.2, 4.3) an evaluation device (6) determines whether the programming (P) or deletion (L) operation was successful or not, and a corresponding output signal (ak) indicative thereof is produced.