公开(公告)号：US08166633B2

公开(公告)日：2012-05-01

申请号：US12972332

申请日：2010-12-17

申请人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

发明人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/398 ,  G11B5/3993 ,  G11C11/14 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

摘要翻译： 描述了具有减小的尺寸和增加的分辨率的非常大的磁阻传感器（EMR传感器）的制造方法。 传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。 传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。 这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。

公开(公告)号：US20110086440A1

公开(公告)日：2011-04-14

申请号：US12972332

申请日：2010-12-17

申请人： Thomas Dudley Boone, JR. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

发明人： Thomas Dudley Boone, JR. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

IPC分类号： H01L21/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/398 ,  G11B5/3993 ,  G11C11/14 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

摘要翻译： 描述了具有减小的尺寸和增加的分辨率的非常大的磁阻传感器（EMR传感器）的制造方法。 传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。 传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。 这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。

公开(公告)号：US07738219B2

公开(公告)日：2010-06-15

申请号：US12345724

申请日：2008-12-30

申请人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Neil Smith

发明人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Neil Smith

IPC分类号： G11B5/39 ,  G11B5/37

CPC分类号： G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3993 ,  G11B5/4853

摘要： A Lorenz magnetoresistive sensor having a pair of voltage leads and a pair of current leads. The voltage leads are located at either side of one of the current leads and are separated by a distance that is substantially equal to the length of a bit to be measured. The Lorenz magnetoresistive sensor can be, for example an extraordinary magnetoresistive sensor having a quantum well structure such as a two dimensional electron gas and a shunt structure formed on an edge of the quantum well structure opposite the voltage and current leads.

摘要翻译： 一种具有一对电压引线和一对电流引线的洛伦兹磁阻传感器。 电压引线位于电流引线之一的两侧，并分开一段距离，该距离基本上等于要测量的位的长度。 Lorenz磁阻传感器可以是例如具有诸如二维电子气体的量子阱结构的异常磁阻传感器，以及形成在与电压和电流引线相反的量子阱结构的边缘上的分流结构。

公开(公告)号：US07881020B2

公开(公告)日：2011-02-01

申请号：US11747683

申请日：2007-05-11

申请人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

发明人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

IPC分类号： G11B5/39 ,  H01L29/82 ,  G01R33/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/398 ,  G11B5/3993 ,  G11C11/14 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

摘要翻译： 描述了具有减小的尺寸和增加的分辨率的非凡的磁阻传感器（EMR传感器）。 传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。 传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。 这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。

公开(公告)号：US20100165518A1

公开(公告)日：2010-07-01

申请号：US12345795

申请日：2008-12-30

申请人： Thomas Dudley Boone, JR. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

发明人： Thomas Dudley Boone, JR. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC分类号： G11B5/33

CPC分类号： G01R33/028 ,  G01R33/091 ,  G01R33/095 ,  G11B5/3993 ,  G11B2005/0002 ,  H01L43/08

摘要： A Lorentz magnetoresistive sensor that employs a gating voltage to control the momentum of charge carriers in a quantum well structure. A gate electrode can be formed at the top of the sensor structure to apply a gate voltage. The application of the gate voltage reduces the momentum of the charge carriers, which makes their movement more easily altered by the presence of a magnetic field, thereby increasing the sensitivity of the sensor.

摘要翻译： 洛伦兹磁阻传感器采用门控电压来控制量子阱结构中电荷载流子的动量。 栅电极可以形成在传感器结构的顶部以施加栅极电压。 施加栅极电压降低了电荷载流子的动量，这使得它们的移动更容易被存在磁场所改变，从而增加了传感器的灵敏度。

公开(公告)号：US20080278860A1

公开(公告)日：2008-11-13

申请号：US11747683

申请日：2007-05-11

申请人： Thomas Dudley Boone, JR. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

发明人： Thomas Dudley Boone, JR. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/398 ,  G11B5/3993 ,  G11C11/14 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

摘要翻译： 描述了具有减小的尺寸和增加的分辨率的非凡的磁阻传感器（EMR传感器）。 传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。 传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。 这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。

公开(公告)号：US08000062B2

公开(公告)日：2011-08-16

申请号：US12345795

申请日：2008-12-30

申请人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

发明人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G01R33/028 ,  G01R33/091 ,  G01R33/095 ,  G11B5/3993 ,  G11B2005/0002 ,  H01L43/08

摘要： A Lorentz magnetoresistive sensor that employs a gating voltage to control the momentum of charge carriers in a quantum well structure. A gate electrode can be formed at the top of the sensor structure to apply a gate voltage. The application of the gate voltage reduces the momentum of the charge carriers, which makes their movement more easily altered by the presence of a magnetic field, thereby increasing the sensitivity of the sensor.

摘要翻译： 洛伦兹磁阻传感器采用门控电压来控制量子阱结构中电荷载流子的动量。 栅电极可以形成在传感器结构的顶部以施加栅极电压。 栅极电压的应用降低了电荷载流子的动量，这使得它们的运动由于存在磁场而更容易改变，从而增加了传感器的灵敏度。

公开(公告)号：US07508635B2

公开(公告)日：2009-03-24

申请号：US11872652

申请日：2007-10-15

申请人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Neil Smith

发明人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Neil Smith

IPC分类号： G11B5/39 ,  G11B5/37

CPC分类号： G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3993 ,  G11B5/4853

摘要： An Extraordinary Magnetoresistive Sensor (EMR Sensor) having wide voltage lead tabs for reduced noise and increased signal to noise ratio. The leads can be formed in a triad structure, wherein a pair of voltage leads is located at either side of a current lead, or can be formed in a diad structure having a single voltage lead located at one side of a current lead.

摘要翻译： 具有宽电压引线接头的非凡磁阻传感器（EMR传感器）可降低噪音，增加信噪比。 引线可以形成为三电极结构，其中一对电压引线位于电流引线的任一侧，或者可以形成为具有位于电流引线一侧的单个电压引线的二元结构。

公开(公告)号：US20090251820A1

公开(公告)日：2009-10-08

申请号：US12487345

申请日：2009-06-18

申请人： Bruce Alvin Gurney ,  Ernesto E. Marinero

发明人： Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC分类号： G11B21/02 ,  G11B5/33

CPC分类号： G11B5/397 ,  G11B5/3993 ,  G11B5/59655

摘要： A magnetic storage system according to one embodiment includes magnetic media containing magnetic domain tracks; and at least one head for reading from the magnetic media, each head having: a first Extraordinary Magentoresistive (EMR) device for detecting magnetic fields of a first magnetic domain track; a second EMR device for detecting magnetic fields of a second magnetic domain track. The system further includes a slider for supporting the head; and a control unit coupled to the head for controlling operation of the head. A system according to another embodiment includes a first Extraordinary Magnetoresistive (EMR) device for detecting magnetic fields of a magnetic domain of interest. A system according to yet another embodiment includes an Extraordinary Magnetoresistive (EMR) device for deriving servoing information.

摘要翻译： 根据一个实施例的磁存储系统包括含有磁畴轨迹的磁介质; 以及用于从磁性介质读取的至少一个磁头，每个磁头具有：用于检测第一磁畴磁道的磁场的第一非均衡磁阻（EMR）装置; 用于检测第二磁畴轨道的磁场的第二EMR装置。 该系统还包括用于支撑头部的滑块; 以及耦合到头部用于控制头部的操作的控制单元。 根据另一实施例的系统包括用于检测感兴趣的磁畴的磁场的第一非均匀磁阻（EMR）装置。 根据又一实施例的系统包括用于导出伺服信息的非寻常磁阻（EMR）装置。

公开(公告)号：US20090195939A1

公开(公告)日：2009-08-06

申请号：US12027213

申请日：2008-02-06

申请人： Bruce Alvin Gurney ,  Ernesto E. Marinero

发明人： Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC分类号： G11B5/127

CPC分类号： G11B5/374

摘要： A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene.

摘要翻译： 洛伦兹磁阻传感器，其具有设置在量子阱结构和传感器表面之间的超薄捕获层。 捕获层防止传感器表面的电荷载体影响量子阱结构。 这允许量子阱结构形成得更接近传感器的表面，因此更接近于磁场源，大大提高了传感器的性能。 一种洛伦兹磁阻传感器，其具有顶部栅极以阻止表面电荷载流子扩散到量子阱中，所述顶部栅电极是高度导电的超薄图案化的金属层或图案化的石墨烯单原子层。