公开(公告)号：US08035927B2

公开(公告)日：2011-10-11

申请号：US12021085

申请日：2008-01-28

申请人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

发明人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/3993 ,  H01L43/08 ,  H01L43/12

摘要： An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.

摘要翻译： 具有与磁分路结构自对准的引线结构的非凡的磁阻传感器（EMR传感器）。 为了形成根据本发明的实施例的EMR传感器，沉积多个层以形成诸如二维电子气体结构（2DEG）的量子阱结构。 沉积具有两个开口的第一掩模结构，并且执行材料去除处理以将传感器材料的部分从由开口暴露的区域中去除。 第一掩模中的两个开口之间的距离限定一组引线和分流结构之间的距离。 然后沉积非磁性金属。 然后形成第二掩模结构以限定引线的形状。

公开(公告)号：US07881020B2

公开(公告)日：2011-02-01

申请号：US11747683

申请日：2007-05-11

申请人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

发明人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

IPC分类号： G11B5/39 ,  H01L29/82 ,  G01R33/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/398 ,  G11B5/3993 ,  G11C11/14 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

摘要翻译： 描述了具有减小的尺寸和增加的分辨率的非凡的磁阻传感器（EMR传感器）。 传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。 传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。 这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。

公开(公告)号：US08166633B2

公开(公告)日：2012-05-01

申请号：US12972332

申请日：2010-12-17

申请人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

发明人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/398 ,  G11B5/3993 ,  G11C11/14 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

摘要翻译： 描述了具有减小的尺寸和增加的分辨率的非常大的磁阻传感器（EMR传感器）的制造方法。 传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。 传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。 这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。

公开(公告)号：US08092704B2

公开(公告)日：2012-01-10

申请号：US12345715

申请日：2008-12-30

申请人： Hamid Balamane ,  Thomas Dudley Boone, Jr. ,  Jordan Asher Katine ,  Barry Cushing Stipe

发明人： Hamid Balamane ,  Thomas Dudley Boone, Jr. ,  Jordan Asher Katine ,  Barry Cushing Stipe

IPC分类号： B44C1/22 ,  B23P15/00

CPC分类号： G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/0021

摘要： A method of fabricating a c-aperture or E-antenna plasmonic near field source for thermal assisted recording applications in hard disk drives is disclosed. A c-aperture or E-antenna is built for recording head applications. The technique employs e-beam lithography, partial reactive ion etching and metal refill to build the c-apertures. This process strategy has the advantage over other techniques in the self-alignment of the c-aperture notch to the c-aperture internal diameter, the small number of process steps required, and the precise and consistent shape of the c-aperture notch itself.

摘要翻译： 公开了一种在硬盘驱动器中制造用于热辅助记录应用的c孔径或E-antenna等离激元近场源的方法。 C孔径或E天线用于记录头部应用。 该技术采用电子束光刻，部分反应离子蚀刻和金属填充来构建c-孔。 该过程策略相对于c孔径切口对c孔径内径的自对准，所需的少量工艺步骤以及c孔口凹口本身的精确且一致的形状具有优于其它技术的优点。

公开(公告)号：US07466521B2

公开(公告)日：2008-12-16

申请号：US11411606

申请日：2006-04-25

申请人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Stefan Maat

发明人： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Stefan Maat

IPC分类号： G11B5/39

CPC分类号： G11B5/3993 ,  G11B2005/0016 ,  G11C11/14

摘要： An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.

摘要翻译： 具有不连续分流结构的非凡磁阻器件EMR。 不连续的分流结构提高了EMR器件的响应线性。 EMR器件包括EMR异质结构，其包括EMR有源层。 异质结构可以包括第一，第二和第三半导体层，第二层夹在第一和第三层之间。 中间或第二半导体层提供二维电子气。 异质结构具有第一和第二相对侧，一对电压引线和一对与结构的第一侧连接的电流引线。 不连续的分流结构与结构的第二侧连接，并且可以是一系列不连续的导电元件，例如半球状金元素的形式。

公开(公告)号：US07738219B2

公开(公告)日：2010-06-15

申请号：US12345724

申请日：2008-12-30

申请人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Neil Smith

发明人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Neil Smith

IPC分类号： G11B5/39 ,  G11B5/37

CPC分类号： G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3993 ,  G11B5/4853

摘要： A Lorenz magnetoresistive sensor having a pair of voltage leads and a pair of current leads. The voltage leads are located at either side of one of the current leads and are separated by a distance that is substantially equal to the length of a bit to be measured. The Lorenz magnetoresistive sensor can be, for example an extraordinary magnetoresistive sensor having a quantum well structure such as a two dimensional electron gas and a shunt structure formed on an edge of the quantum well structure opposite the voltage and current leads.

摘要翻译： 一种具有一对电压引线和一对电流引线的洛伦兹磁阻传感器。 电压引线位于电流引线之一的两侧，并分开一段距离，该距离基本上等于要测量的位的长度。 Lorenz磁阻传感器可以是例如具有诸如二维电子气体的量子阱结构的异常磁阻传感器，以及形成在与电压和电流引线相反的量子阱结构的边缘上的分流结构。

公开(公告)号：US08760817B2

公开(公告)日：2014-06-24

申请号：US12470827

申请日：2009-05-22

申请人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Neil Smith

发明人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Neil Smith

IPC分类号： G11B5/33

CPC分类号： G11B5/39 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/398 ,  G11B2005/0005

摘要： A spin accumulation sensor having a three terminal design that allows the free layer to be located at the air bearing surface. A non-magnetic conductive spin transport layer extends from a free layer structure (located at the ABS) to a reference layer structure removed from the ABS. The sensor includes a current or voltage source for applying a current across a reference layer structure. The current or voltage source has a lead that is connected with the non-magnetic spin transport layer and also to electric ground. Circuitry for measuring a signal voltage measures a voltage between a shield that is electrically connected with the free layer structure and the ground. The free layer structure can include a spin diffusion layer that ensures that all spin current is completely dissipated before reaching the lead to the voltage source, thereby preventing shunting of the spin current to the voltage source.

摘要翻译： 具有允许自由层位于空气轴承表面的三端设计的自旋累积传感器。 非磁性导电自旋传输层从自由层结构（位于ABS处）延伸到从ABS去除的参考层结构。 传感器包括用于在参考层结构上施加电流的电流或电压源。 电流源或电压源具有与非磁性自旋传输层连接的引线，也与电接地连接。 用于测量信号电压的电路测量与自由层结构电连接的屏蔽与地之间的电压。 自由层结构可以包括自旋扩散层，其确保在到达电压源的引线之前所有自旋电流完全消散，从而防止自旋电流分流到电压源。

公开(公告)号：US08000062B2

公开(公告)日：2011-08-16

申请号：US12345795

申请日：2008-12-30

申请人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

发明人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G01R33/028 ,  G01R33/091 ,  G01R33/095 ,  G11B5/3993 ,  G11B2005/0002 ,  H01L43/08

摘要： A Lorentz magnetoresistive sensor that employs a gating voltage to control the momentum of charge carriers in a quantum well structure. A gate electrode can be formed at the top of the sensor structure to apply a gate voltage. The application of the gate voltage reduces the momentum of the charge carriers, which makes their movement more easily altered by the presence of a magnetic field, thereby increasing the sensitivity of the sensor.

摘要翻译： 洛伦兹磁阻传感器采用门控电压来控制量子阱结构中电荷载流子的动量。 栅电极可以形成在传感器结构的顶部以施加栅极电压。 栅极电压的应用降低了电荷载流子的动量，这使得它们的运动由于存在磁场而更容易改变，从而增加了传感器的灵敏度。

公开(公告)号：US07508635B2

公开(公告)日：2009-03-24

申请号：US11872652

申请日：2007-10-15

申请人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Neil Smith

发明人： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero ,  Neil Smith

IPC分类号： G11B5/39 ,  G11B5/37

CPC分类号： G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3993 ,  G11B5/4853

摘要： An Extraordinary Magnetoresistive Sensor (EMR Sensor) having wide voltage lead tabs for reduced noise and increased signal to noise ratio. The leads can be formed in a triad structure, wherein a pair of voltage leads is located at either side of a current lead, or can be formed in a diad structure having a single voltage lead located at one side of a current lead.

摘要翻译： 具有宽电压引线接头的非凡磁阻传感器（EMR传感器）可降低噪音，增加信噪比。 引线可以形成为三电极结构，其中一对电压引线位于电流引线的任一侧，或者可以形成为具有位于电流引线一侧的单个电压引线的二元结构。

公开(公告)号：US08619535B2

公开(公告)日：2013-12-31

申请号：US13438811

申请日：2012-04-03

申请人： Hamid Balamane ,  Thomas Dudley Boone, Jr. ,  Neil Leslie Robertson ,  Barry Cushing Stipe ,  Timothy Carl Strand

发明人： Hamid Balamane ,  Thomas Dudley Boone, Jr. ,  Neil Leslie Robertson ,  Barry Cushing Stipe ,  Timothy Carl Strand

IPC分类号： G11B7/135

CPC分类号： G11B5/3163 ,  G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

摘要： An apparatus according to one embodiment includes a near field transducer comprising a conductive metal film; and an optical waveguide for illumination of the near field transducer, a light guiding core layer of the optical waveguide being spaced from the near field transducer by less than about 100 nanometers and greater than 0 nanometers, wherein a longitudinal axis of the optical waveguide is substantially perpendicular to an air bearing surface.

摘要翻译： 根据一个实施例的装置包括：包括导电金属膜的近场换能器; 以及用于照明近场换能器的光波导，光波导的导光芯层与近场换能器间隔小于约100纳米且大于0纳米，其中光波导的纵向轴线基本上 垂直于空气轴承表面。