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    ELECTRONIC DEVICE INCLUDING A FEATURE IN A TRENCH
    6.
    发明申请
    ELECTRONIC DEVICE INCLUDING A FEATURE IN A TRENCH 有权
    电子设备，其中包括在TRENCH中的功能

    公开(公告)号：US20120049320A1

    公开(公告)日：2012-03-01

    申请号：US12871390

    申请日：2010-08-30

    申请人： John Michael Parsey, JR. ,  Gordon M. Grivna

    发明人： John Michael Parsey, JR. ,  Gordon M. Grivna

    IPC分类号： H01L21/82 ,  H01L21/768

    CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L27/0207 ,  H01L28/10 ,  H01L28/20 ,  H01L28/91 ,  H01L29/6609 ,  H01L29/66106 ,  H01L29/861 ,  H01L29/866 ,  H01L29/945 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05025 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/00

    摘要： A semiconductor substrate can be patterned to define a trench and a feature. In an embodiment, the trench can be formed such that after filling the trench with a material, a bottom portion of the filled trench may be exposed during a substrate thinning operation. In another embodiment, the trench can be filled with a thermal oxide. The feature can have a shape that reduces the likelihood that a distance between the feature and a wall of the trench will be changed during subsequent processing. A structure can be at least partly formed within the trench, wherein the structure can have a relatively large area by taking advantage of the depth of the trench. The structure can be useful for making electronic components, such as passive components and through-substrate vias. The process sequence to define the trenches and form the structures can be tailored for many different process flows.

    摘要翻译： 半导体衬底可以被图案化以限定沟槽和特征。 在一个实施例中，可以形成沟槽，使得在用材料填充沟槽之后，填充沟槽的底部部分可以在衬底变薄操作期间暴露。 在另一个实施例中，沟槽可以用热氧化物填充。 该特征可以具有减小在后续处理期间在特征和沟槽的壁之间的距离将被改变的可能性的形状。 结构可以至少部分地形成在沟槽内，其中通过利用沟槽的深度，该结构可以具有相对大的面积。 该结构可用于制造电子部件，例如无源部件和贯穿基板通孔。 定义沟槽和形成结构的过程顺序可以针对许多不同的工艺流程进行定制。

    ELECTRONIC DEVICE INCLUDING A FEATURE IN AN OPENING
    7.
    发明申请
    ELECTRONIC DEVICE INCLUDING A FEATURE IN AN OPENING 有权
    电子设备，包括打开的功能

    公开(公告)号：US20130277807A1

    公开(公告)日：2013-10-24

    申请号：US13920675

    申请日：2013-06-18

    申请人： John Michael Parsey, JR. ,  Gordon M. GRIVNA

    发明人： John Michael Parsey, JR. ,  Gordon M. GRIVNA

    IPC分类号： H01L23/48

    CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L27/0207 ,  H01L28/10 ,  H01L28/20 ,  H01L28/91 ,  H01L29/6609 ,  H01L29/66106 ,  H01L29/861 ,  H01L29/866 ,  H01L29/945 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05025 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/00

    摘要： A semiconductor substrate can be patterned to define a trench and a feature. In an embodiment, the trench can be formed such that after filling the trench with a material, a bottom portion of the filled trench may be exposed during a substrate thinning operation. In another embodiment, the trench can be filled with a thermal oxide. The feature can have a shape that reduces the likelihood that a distance between the feature and a wall of the trench will be changed during subsequent processing. A structure can be at least partly formed within the trench, wherein the structure can have a relatively large area by taking advantage of the depth of the trench. The structure can be useful for making electronic components, such as passive components and through-substrate vias. The process sequence to define the trenches and form the structures can be tailored for many different process flows.

    摘要翻译： 半导体衬底可以被图案化以限定沟槽和特征。 在一个实施例中，可以形成沟槽，使得在用材料填充沟槽之后，填充沟槽的底部部分可以在衬底变薄操作期间暴露。 在另一个实施例中，沟槽可以用热氧化物填充。 该特征可以具有减小在后续处理期间在特征和沟槽的壁之间的距离将被改变的可能性的形状。 结构可以至少部分地形成在沟槽内，其中通过利用沟槽的深度，该结构可以具有相对大的面积。 该结构可用于制造电子部件，例如无源部件和贯穿基板通孔。 定义沟槽和形成结构的过程顺序可以针对许多不同的工艺流程进行定制。