Programmable interconnect or cell using silicided MOS transistors
    1.
    发明授权
    Programmable interconnect or cell using silicided MOS transistors 失效
    使用硅化MOS晶体管的可编程互连或单元

    公开(公告)号:US5019878A

    公开(公告)日:1991-05-28

    申请号:US332652

    申请日:1989-03-31

    摘要: A programmable device (10) is formed from a silicided MOS transistor. The transistor 10) is formed at a face of a semiconductor layer (12), and includes a diffused drain region (17, 22) and a source region (19, 24) that are spaced apart by a channel region (26). At least the drain region (22) has a surface with a silicided layer (28) formed on a portion thereof. The application of a programming voltage in the range of ten to fifteen volts from the drain region (17, 22) to the source region (19, 24) has been discovered to reliably form a melt filament (40) across the channel region (26). A gate voltage (V.sub.g) may be applied to the insulated gate (14) over the channel region (26) such that a ten-volt programming voltage (V.sub.PROG) will cause melt filaments to form in those transistors to which the gate voltage is applied, but will not cause melt filaments to form in the remaining transistors (10) of an array.

    摘要翻译: 可编程器件(10)由硅化MOS晶体管形成。 晶体管10)形成在半导体层(12)的表面,并且包括被沟道区域(26)隔开的扩散漏极区域(17,22)和源极区域(19,24)。 至少漏极区域(22)具有在其一部分上形成有硅化物层(28)的表面。 已经发现,从漏区(17,22)到源区(19,24)的施加从十到十五伏的范围内的编程电压可靠地在通道区域(26)上形成熔丝(40) )。 栅极电压(Vg)可以在沟道区域(26)上施加到绝缘栅极(14),使得十伏编程电压(VPROG)将在施加栅极电压的晶体管中形成熔丝 ,但不会在阵列的剩余晶体管(10)中形成熔丝。

    Low voltage triggering semiconductor controlled rectifiers
    2.
    发明授权
    Low voltage triggering semiconductor controlled rectifiers 失效
    低电压触发半导体受控整流器

    公开(公告)号:US5465189A

    公开(公告)日:1995-11-07

    申请号:US289983

    申请日:1994-08-12

    IPC分类号: H01L27/02 H02H9/04

    CPC分类号: H01L27/0259 H01L29/87

    摘要: A new semiconductor controlled rectifier which may be used to provide on-chip protection against ESD stress applied at the input, output, power supply pins or between any arbitrary pair of pins of an integrated circuit is disclosed. The structure which has the lowest breakdown voltage for a given technology is incorporated into the SCR enabling a SCR trigger voltage determined by the lowest breakdown-structure.

    摘要翻译: 公开了一种新的半导体可控整流器,其可用于提供片上保护以防止在输入,输出,电源引脚或集成电路的任意任意一对引脚之间施加的ESD应力。 对于给定技术具有最低击穿电压的结构被并入到SCR中,使得能够由最低击穿结构确定的SCR触发电压。

    Programmable interconnect or cell using silicided MOS transistors
    3.
    发明授权
    Programmable interconnect or cell using silicided MOS transistors 失效
    使用硅化MOS晶体管的可编程互连或单元

    公开(公告)号:US5068696A

    公开(公告)日:1991-11-26

    申请号:US574981

    申请日:1990-08-29

    IPC分类号: H01L29/10 H01L29/78

    CPC分类号: H01L29/78 H01L29/1033

    摘要: A programmable device (10) is formed from a silicided MOS transistor. The transistor (10) is formed at a face of a semiconductor layer (12), and includes a diffused drain region (17, 22) and a source region (19, 24) that are spaced apart by a channel region (26). At least the drain region (22) has a surface with a silicided layer (28) formed on a portion thereof. The application of a programming voltage in the range of ten to fifteen volts from the drain region (17, 22) to the source region (19, 24) has been discovered to reliably form a melt filament (40) across the channel region (26). A gate voltage (V.sub.g) may be applied to the insulated gate (14) over the channel region (26) such that a ten-volt programming voltage (V.sub.PROG) will cause melt filaments to form in those transistors to which the gate voltage is applied, but will not cause melt filaments to form in the remaining transistors (10) of an array.

    摘要翻译: 可编程器件(10)由硅化MOS晶体管形成。 晶体管(10)形成在半导体层(12)的表面,并且包括由沟道区域(26)间隔开的扩散漏极区域(17,22)和源极区域(19,24)。 至少漏极区域(22)具有在其一部分上形成有硅化物层(28)的表面。 已经发现,从漏区(17,22)到源区(19,24)的施加从十到十五伏的范围内的编程电压可靠地在通道区域(26)上形成熔丝(40) )。 栅极电压(Vg)可以在沟道区域(26)上施加到绝缘栅极(14),使得十伏编程电压(VPROG)将在施加栅极电压的晶体管中形成熔丝 ,但不会在阵列的剩余晶体管(10)中形成熔丝。

    Gate coupled SCR for ESD protection circuits
    4.
    发明授权
    Gate coupled SCR for ESD protection circuits 失效
    用于ESD保护电路的门极耦合SCR

    公开(公告)号:US5907462A

    公开(公告)日:1999-05-25

    申请号:US302145

    申请日:1994-09-07

    IPC分类号: H01L27/02 H02H9/00

    CPC分类号: H01L27/0262 H01L29/87

    摘要: A protection device comprising a gate-coupled silicon-controlled rectifier (SCR) (100), SCR (100) comprises an anode (105) formed in n-well (104) and connected to a pad (128) and a cathode (111) connected to ground. A gate-coupled NMOS transistor (120) has a gate (116) connected through a resistive element (118) to ground. A n+ region (112) forms both the cathode (111) and a source of the NMOS transistor (120). N-well (104) forms the drain. Stress voltage is coupled from pad (128) to gate electrode (116) causing NMOS transistor (120) to conduct. This, in turn, triggers SCR (100) which dissipates the stress current at the pad (128). The coupled voltage at gate electrode (116) dissipates within a designed time constant through resistive element (118).

    摘要翻译: 一种保护装置,包括栅极耦合的可硅可控整流器(SCR)(100),SCR(100)包括形成在n阱(104)中并连接到焊盘(128)和阴极(111)的阳极 )连接到地面。 栅极耦合NMOS晶体管(120)具有通过电阻元件(118)连接到地的栅极(116)。 n +区域(112)形成阴极(111)和NMOS晶体管(120)的源极。 N阱(104)形成排水管。 应力电压从焊盘(128)耦合到栅电极(116),导致NMOS晶体管(120)导通。 这反过来又触发SCR(100),其消耗衬垫(128)处的应力电流。 栅极(116)处的耦合电压通过电阻元件(118)在设计的时间常数内消散。

    NOVEL NANOPARTICLE PHOSPHOR
    6.
    发明申请
    NOVEL NANOPARTICLE PHOSPHOR 审中-公开
    新型纳米磷光体

    公开(公告)号:US20100252778A1

    公开(公告)日:2010-10-07

    申请号:US12675924

    申请日:2008-07-25

    IPC分类号: C09K11/54 B05D3/02

    CPC分类号: C09K11/883

    摘要: An object of the present invention is to reduce the incompleteness of the surface state due to lattice constant and steric hindrance, which was heretofore nearly unavoidable, in the surface treatment of light-emitting semiconductor nanoparticles. The present invention provides an excellent luminescent material that has enhanced photoluminescence efficiency, reduced photoluminescence spectrum width, and increased chemical resistance. Specifically, the present invention provides a luminescent material comprising semiconductor nanoparticles having a mean particle size of 2 to 12 nm and a band gap of 3.8 eV or less, each of the semiconductor nanoparticles being coated with a silicon-containing layer, the semiconductor nanoparticles in the luminescent material having a peak emission wavelength 20 nm or more towards the longer-wavelength side than the peak emission wavelength of the semiconductor nanoparticles alone.

    摘要翻译: 本发明的目的在于减少发光半导体纳米粒子的表面处理中由于晶格常数和空间位阻而导致的表面状态的不完全性,这在以前几乎是不可避免的。 本发明提供了具有增强的光致发光效率,降低的光致发光光谱宽度和增加的耐化学性的优异的发光材料。 具体地说,本发明提供一种发光材料,其包含平均粒度为2〜12nm,带隙为3.8eV以下的半导体纳米粒子,各半导体纳米粒子均涂覆有含硅层,半导体纳米粒子 所述发光材料的峰值发射波长比仅在半导体纳米颗粒的峰值发射波长长的波长侧为20nm以上。

    Binarizing method and device thereof
    7.
    发明授权
    Binarizing method and device thereof 有权
    二价法及其装置

    公开(公告)号:US07564384B2

    公开(公告)日:2009-07-21

    申请号:US12132959

    申请日:2008-06-04

    IPC分类号: H03M7/00

    摘要: A binary coding and decoding method and apparatus for MVD (Motion Vector Difference) absolute values, includes: dividing symbols for MVD absolute values to be coded into a plurality of subsets according to probability distribution properties; assigning a binary codeword for each subset; assigning a binary codeword for each symbol in each subset; concatenating and outputting the binary codeword for each subset and the binary codeword for each symbol in the subset, as the binary coding result. At the decoding side, decoding operations are performed by using a principle corresponding to that at the coding side. In this manner, the invention makes full use of the source properties on one hand, and effectively prevents the codeword length from being too long on the other hand. It has been experimentally testified that a better compression effect may be achieved during arithmetic coding process and thus the image coding performance may be improved effectively.

    摘要翻译: 用于MVD(运动矢量差)绝对值的二进制编码和解码方法和装置包括:根据概率分布特性将要编码的MVD绝对值的符号划分成多个子集; 为每个子集分配二进制码字; 为每个子集中的每个符号分配二进制码字; 作为二进制编码结果,连接并输出每个子集的二进制码字和子集中每个符号的二进制码字。 在解码侧,通过使用与编码侧对应的原理进行解码操作。 以这种方式,本发明一方面充分利用了源特性,另一方面有效地防止了码字长度过长。 已经通过实验证明,在算术编码过程中可以获得更好的压缩效果,因此可以有效地提高图像编码性能。

    Process for provisioning resources in a radiotelephone network
    8.
    发明授权
    Process for provisioning resources in a radiotelephone network 失效
    在无线电话网络中配置资源的过程

    公开(公告)号:US06173175B2

    公开(公告)日:2001-01-09

    申请号:US08955201

    申请日:1997-10-21

    IPC分类号: H04Q720

    摘要: The provisioning process of the present invention first determines the average number of units of the system resource that are held per call. This parameter is a function of the call model and call-related event holding times. The average number of units is used, along with the Busy Hour Call Attempts to determine the holding rate, Rresource, of that particular call-related event to be allocated memory. The holding rate is then used by ┌Rresource +7{square root over (Rresource)}┐ to determine the number of resources required to be allocated to the call-related event.

    摘要翻译: 本发明的供应过程首先确定每个呼叫保持的系统资源的平均单位数。 此参数是呼叫模式和呼叫相关事件保持时间的函数。 使用平均单位数,以及忙时呼叫尝试来确定要分配内存的特定呼叫相关事件的保持率Rresource。 然后,┌Rresource+7 {平方根(Rresource)} then使用保持率来确定要分配给呼叫相关事件的资源数量。

    Germanium yeast human diet nutritional supplement
    9.
    发明授权
    Germanium yeast human diet nutritional supplement 失效
    锗酵母人类饮食营养补充剂

    公开(公告)号:US6017526A

    公开(公告)日:2000-01-25

    申请号:US661089

    申请日:1996-06-10

    摘要: Germanium-containing compounds are known to have certain therapeutic and prophylactic properties when introduced to the human body, including chemotherapeutic qualities and stimulation of the immune system. The present invention discloses human dietary supplements containing a metabolizable form of germanium-containing yeast, and methods of preparation and use thereof. Although some germanium compounds are known to be toxic, the germanium-yeast product used in the nutritional supplements of the invention are in a form which is more pure, less toxic, and metabolized more readily by the human body.

    摘要翻译: 已知含锗化合物在引入人体时具有一定的治疗和预防性质,包括化学疗法的质量和免疫系统的刺激。 本发明公开了含有含锗酵母的代谢形式的人类膳食补充剂及其制备和使用方法。 虽然已知一些锗化合物是有毒的,但是用于本发明的营养补充剂中的锗酵母产品是更容易被人体更纯净,更少毒性和代谢的形式。

    ADAPTIVE MODE-SWITCHING SPATIAL MODULATION FOR MIMO WIRELESS COMMUNICATION SYSTEM
    10.
    发明申请
    ADAPTIVE MODE-SWITCHING SPATIAL MODULATION FOR MIMO WIRELESS COMMUNICATION SYSTEM 有权
    用于MIMO无线通信系统的自适应模式切换空间调制

    公开(公告)号:US20150195018A1

    公开(公告)日:2015-07-09

    申请号:US14408563

    申请日:2012-06-18

    摘要: Techniques are generally described related to tag refinement strategy. One example method for communicating between a first wireless system having a plurality of first antennas and a second wireless system having a plurality of second antennas may be presented. The method may include receiving configuration information associated with the plurality of first antennas and a plurality of modulation schemes which the first wireless system is configured to support; determining a plurality of configurations based on the configuration information, wherein each of the plurality of configurations defines a corresponding subset of first antennas selected from the plurality of first antennas and a corresponding modulation scheme selected from the plurality of modulation schemes; and selecting a first configuration from the plurality of configurations, wherein when operating under the first configuration, the first wireless system is configured to achieve one or more performance criteria.

    摘要翻译: 技术通常描述为与标签细化策略相关。 可以呈现用于在具有多个第一天线的第一无线系统与具有多个第二天线的第二无线系统之间进行通信的一个示例性方法。 该方法可以包括接收与多个第一天线相关联的配置信息和第一无线系统被配置为支持的多个调制方案; 基于所述配置信息确定多个配置,其中所述多个配置中的每一个配置定义从所述多个第一天线中选择的第一天线的相应子集以及从所述多个调制方案中选择的对应调制方案; 以及从所述多个配置中选择第一配置,其中当在所述第一配置下操作时,所述第一无线系统被配置为实现一个或多个性能标准。