公开(公告)号：US20150027522A1

公开(公告)日：2015-01-29

申请号：US14241762

申请日：2011-11-16

申请人： Thomas Mueller ,  Armin Gerhard Aberle

发明人： Thomas Mueller ,  Armin Gerhard Aberle

IPC分类号： H01L31/02 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/02008 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1868 ,  Y02E10/547

摘要： A method of fabricating an all-back-contact (ABC) solar cell is disclosed. A doped layer of a first polarity (102) is formed on a rear side of a wafer (100). A first masking structure (106, 110) is formed on the doped layer of the first polarity. Portions of the first masking structure (106, 110) are removed using a first laser ablation process. Doped regions of a second polarity (118, 135, 137) are formed in areas where the first masking structure has been removed. Contact bars (134, 136) are formed by screen printing and firing such that each contact bar is in contact with one of the doped regions (135, 137).

摘要翻译： 公开了制造全背接触（ABC）太阳能电池的方法。 在晶片（100）的后侧形成有第一极性（102）的掺杂层。 在第一极性的掺杂层上形成第一掩模结构（106,110）。 使用第一激光烧蚀工艺去除第一掩模结构（106,110）的部分。 第二极性的掺杂区域（118,135,137）形成在已经去除了第一掩模结构的区域中。 接触棒（134,136）通过丝网印刷和烧制形成，使得每个接触棒与一个掺杂区域（135,137）接触。

公开(公告)号：US20090308429A1

公开(公告)日：2009-12-17

申请号：US12438338

申请日：2007-08-21

申请人： Timothy Michael Walsh ,  Armin Gerhard Aberle

发明人： Timothy Michael Walsh ,  Armin Gerhard Aberle

IPC分类号： H01L31/042 ,  H01L31/18

CPC分类号： H01L31/046 ,  H01L31/022466 ,  H01L31/0475 ,  Y02E10/50

摘要： A thin-film solar cell module and a method of interconnecting thin-film solar cells are described. The method comprises forming one or more grooves (200) in a semiconductor thin-film diode structure (202) on a superstrate (102) such that the diode structure is divided into a plurality of discrete solar cells (206), and such that pairs of sidewalls (204) of the respective solar cells have a doping polarity that is the same as that of a superstrate-side semiconductor layer of the diode structure. A non-continuous insulating layer (300) is formed on the diode structure such that one sidewall of each pair of sidewalls is covered by the insulating layer while the other sidewall of each pair and one or more surface contact regions of each solar cell remain exposed. A non-continuous conductive layer (400) is formed on the diode structure such that for each pair of adjacent first and second solar cells (206a, 206b), the exposed sidewall of the first solar cell is electrically connected to the surface contact regions of the second solar cell and remains free from electrical connection to the surface contact regions of the first solar cell.

摘要翻译： 描述薄膜太阳能电池模块和互连薄膜太阳能电池的方法。 该方法包括在衬底（102）上的半导体薄膜二极管结构（202）中形成一个或多个凹槽（200），使得二极管结构被分成多个分立的太阳能电池（206），并且使得对 各个太阳能电池的侧壁（204）具有与二极管结构的衬底侧半导体层相同的掺杂极性。 在二极管结构上形成非连续绝缘层（300），使得每一对侧壁的一个侧壁被绝缘层覆盖，而每对的另一侧壁和每个太阳能电池的一个或多个表面接触区域保持暴露 。 在二极管结构上形成非连续导电层（400），使得对于每对相邻的第一和第二太阳能电池（206a，206b），第一太阳能电池的暴露的侧壁电连接到第一太阳能电池的表面接触区域 第二太阳能电池并且保持不与第一太阳能电池的表面接触区域的电连接。

公开(公告)号：US20080289683A1

公开(公告)日：2008-11-27

申请号：US11628387

申请日：2005-05-23

申请人： Timothy Michael Walsh ,  Armin Gerhard Aberle ,  Stewart Ross Wenham

发明人： Timothy Michael Walsh ,  Armin Gerhard Aberle ,  Stewart Ross Wenham

IPC分类号： H01L31/00

CPC分类号： H01L31/0465 ,  Y02E10/50

摘要： A method of interconnecting thin-film solar cells formed on a foreign insulating substrate or superstrate is described: the top and bottom layers of the thin-film solar cells having a sheet resistances below 10,000 Ω/sq. The method comprises the steps of forming a thin-film solar cell structure comprising at least an n+-type layer (2,3) and a p+ type layer (4) on the foreign substrate/superstrate, and forming one or more electrical contacts (19), each contact being between an n+ type layer on one portion of the substrate/superstrate to a p+-type layer (16) on an adjacent portion of the substrate/superstrate. Each electrical contact (19) is formed, at least in part, from respective materials of the n+ type layer (2,3) and the p+ type layer (4) of the initially formed solar cell structure: and the materials of the n+ type layer (2,3) and the p+ type layer (4) forming at least part of each electrical contact are brought into a liquid phase by eg laser a first time and subsequently into a mixed solid phase (16) during the formation of the other side of the electrical contact (19). Deposition of a conductor at the bottom of the groove formed by the laser forms the electrical interconnection (19) between the neighbouring cells.

摘要翻译： 描述了形成在外部绝缘基板或覆层上的薄膜太阳能电池互连的方法：薄膜太阳能电池的顶层和底层具有低于10,000Ω/ sq的薄片电阻。 该方法包括以下步骤：在异物基底/覆层上形成至少包含n +型层（2,3）和p +型层（4）的薄膜太阳能电池结构，并形成一个或多个电触点（ 如图19所示），每个接触位于衬底/衬底的一部分上的n +型层与衬底/衬底的相邻部分上的p +型层（16）之间。 每个电接触件（19）至少部分地由初始形成的太阳能电池结构的n +型层（2,3）和p +型层（4）的各自材料形成，并且n +型材料 形成每个电接触的至少一部分的层（2,3）和p +型层（4）首先通过例如激光使其成为液相，随后在形成另一个时形成混合固相（16） 一侧的电接点（19）。 在由激光器形成的凹槽的底部处的导体的沉积形成相邻单元之间的电互连（19）。

公开(公告)号：US20110214714A1

公开(公告)日：2011-09-08

申请号：US12999160

申请日：2009-06-16

申请人： Armin Gerhard Aberle ,  Per Ingemar Widenborg ,  Peter Jaroslav Gress

发明人： Armin Gerhard Aberle ,  Per Ingemar Widenborg ,  Peter Jaroslav Gress

IPC分类号： H01L31/048 ,  H01L31/18

CPC分类号： H01L31/0504 ,  H01L31/0201 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

摘要： A thin-film solar cell module, and a method of interconnecting two or more thin-film solar cells on a foreign supporting substrate. The method comprises the step of wire-bonding an air-side electrode of one thin-film solar cell to a substrate-side electrode of an adjacent solar cell, such that said thin-film solar cells are connected in series.

摘要翻译： 薄膜太阳能电池模块以及在外部支撑基板上互连两个以上的薄膜太阳能电池的方法。 该方法包括将一个薄膜太阳能电池的空气侧电极与相邻的太阳能电池的基板侧电极导线接合的步骤，使得所述薄膜太阳能电池串联连接。

公开(公告)号：US20080276986A1

公开(公告)日：2008-11-13

申请号：US11908760

申请日：2006-02-28

申请人： Armin Gerhard Aberle ,  Timothy Michael Walsh ,  Daniel A. Inns

发明人： Armin Gerhard Aberle ,  Timothy Michael Walsh ,  Daniel A. Inns

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/022425 ,  Y02E10/547 ,  Y02P70/521

摘要： A photolithography method for contacting one or more contact regions of a thin-film semiconductor structure on a transparent supporting material is disclosed. The method comprises the steps of forming one or more openings (6a) in the semiconductor structure (2, 3, 4) to substantially expose respective surface portions (5a) of the supporting material (5) and respective contact regions (4a); covering the surface of the semiconductor structure with a positive photoresist (7); illuminating the semiconductor structure with an exposing light through the supporting material such that first portions of the photoresist covering the substantially exposed surface portions of the supporting material and at least portions of the contact regions respectively are exposed to the exposing light and such that the exposing light is absorbed in the semiconductor structure, leaving one or more second portions of the photoresist covering the semiconductor structure unexposed. Preferably, a conductive layer (9) is deposited over the remaining second portions of the photoresist, the surface portions (5a) of the supporting material, and at least portions of the contact regions, such that the conductive layer may be in contact with the supporting substrate and making electrical contact with the contact regions. Preferably, the remaining second portions of the photoresist are chemically dissolved, and portions of the conductive layer sitting above the second portions of the photoresist are lifted off, leaving remaining portions of the conductive layer in contact with the supporting substrate and making electrical contact with the contact regions.

摘要翻译： 公开了一种用于将透明支撑材料上的薄膜半导体结构的一个或多个接触区域接触的光刻方法。 该方法包括以下步骤：在半导体结构（2,3,4）中形成一个或多个开口（6a），以基本上暴露支撑材料（5）的相应表面部分（5a）和相应的接触区域（4a） ）; 用正性光致抗蚀剂（7）覆盖半导体结构的表面; 用暴露的光通过支撑材料照射半导体结构，使得覆盖支撑材料的基本上暴露的表面部分的光致抗蚀剂的第一部分和接触区域的至少部分分别暴露于曝光光，并使曝光光 被吸收在半导体结构中，使得光致抗蚀剂覆盖半导体结构的一个或多个第二部分未曝光。 优选地，导电层（9）沉积在光致抗蚀剂的剩余第二部分，支撑材料的表面部分（5a）和接触区域的至少一部分上，使得导电层可以与 支撑基板并与接触区域电接触。 优选地，光致抗蚀剂的其余第二部分被化学溶解，并且位于光致抗蚀剂的第二部分上方的导电层的部分被提起，导致导电层的剩余部分与支撑衬底接触并使其与 联系地区。