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6 条记录 (耗时 0.021 秒)

    Magnetoresistor using a superlattice of GaAs and AlGaAs
    3.
    发明授权
    Magnetoresistor using a superlattice of GaAs and AlGaAs 失效
    使用GaAs和AlGaAs的超晶格的磁控管

    公开(公告)号：US5189367A

    公开(公告)日：1993-02-23

    申请号：US796709

    申请日：1991-11-21

    申请人： Mark Lee ,  Stuart A. Solin ,  Peter A. Wolff

    发明人： Mark Lee ,  Stuart A. Solin ,  Peter A. Wolff

    IPC分类号： G01R33/09 ,  H01L21/20 ,  H01L43/08 ,  H01L43/10

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  H01L43/10

    摘要： A superlattice comprising alternating layers of undoped GaAs and silicon doped Al.sub.0.3 Ga.sub.0.7 As is used as a magnetoresistor for measuring magnet fields in excess of one Tesla. The magnetic field to be measured is passed vertically through the superlattice and current from a source of constant current is flowed vertically through the resulting superlattice and the voltage drop across the superlattice is measured to provide an indication of the strength of the magnetic field.

    摘要翻译： 使用包括未掺杂的GaAs和掺杂硅的Al 0.3 Ga 0.7 As的交替层的超晶格作为用于测量超过一特斯拉的磁场的磁电阻。 要测量的磁场垂直通过超晶格，并且来自恒定电流源的电流垂直地流过所得超晶格，并且测量跨越超晶格的电压降以提供磁场强度的指示。

    Near-field scanning optical microscope probe exhibiting resonant plasmon excitation
    4.
    发明授权
    Near-field scanning optical microscope probe exhibiting resonant plasmon excitation 失效
    显示共振等离激元激发的近场扫描光学显微镜探针

    公开(公告)号：US5789742A

    公开(公告)日：1998-08-04

    申请号：US739096

    申请日：1996-10-28

    申请人： Peter A. Wolff

    发明人： Peter A. Wolff

    IPC分类号： G01Q60/22 ,  G02B6/24 ,  G02B6/26 ,  G02B21/00

    CPC分类号： G01Q60/22 ,  B82Y20/00 ,  B82Y35/00 ,  G02B6/241

    摘要： A tapered probe tip for use in near-field scanning optical microscopy is coated with a sheath of metal material having a plasma frequency comparable to optical frequencies. Alternatively, the sheath material has lower energy plasmons. The preferred sheath material is silver. Other preferred sheath materials are potassium, Rb, cesium, tungsten oxide, sodium tungsten oxide and Re oxide.

    摘要翻译： 在近场扫描光学显微镜中使用的锥形探针尖端涂覆有具有与光学频率相当的等离子体频率的金属材料护套。 或者，护套材料具有较低能量等离子体激元。 优选的护套材料是银。 其它优选的护套材料是钾，Rb，铯，氧化钨，氧化钨钠和Re氧化物。

    Third order room temperature nonlinear optical switches
    5.
    发明授权
    Third order room temperature nonlinear optical switches 失效
    三阶室温非线性光开关

    公开(公告)号：US5406407A

    公开(公告)日：1995-04-11

    申请号：US206549

    申请日：1994-03-04

    申请人： Peter A. Wolff

    发明人： Peter A. Wolff

    IPC分类号： G02F1/35 ,  G02F1/355 ,  G02F3/02

    CPC分类号： G02F3/024 ,  G02F1/3551

    摘要： An optical switching device comprises a material which exhibits third order optical nonlinearity (X.sup.(3)) at frequencies just below the band gap of the material, a room temperature and at a wavelength of approximately 1.55.mu.. The switching device is particularly useful for optical communication applications. The preferred material is n-Al.sub.x Ga.sub.1-x Sb, where x is approximately 0.1. Additional preferred materials are those which have a band gap (at .GAMMA.) just above the photon energy of the system and have a subsidiary conduction band (at X or L) approximately 0.1 ev above the E.sub.o level at .GAMMA. at a predetermined wavelength. Such alloy systems include (AlGaIn)As with 0.635.mu..ltoreq..lambda..ltoreq.0.672.mu., and (AlGaIn)P with 0.56.mu..ltoreq..lambda..ltoreq.0.65.mu..

    摘要翻译： 光学开关装置包括在低于材料带隙的频率，室温和约1.55μm的波长处呈现三阶光学非线性（X（3））的材料。 开关装置对光通信应用特别有用。 优选的材料是n-Al x Ga 1-x Sb，其中x为约0.1。 另外优选的材料是具有刚好高于系统的光子能量的带隙（GAMMA）的那些，并且具有在预定波长的GAMMA处的Eo电平以上约0.1ev的辅助导带（在X或L处）。 这种合金体系包括（AlGaIn）As，0.635μm，0.672μm，（AlGaIn）P为0.56μm，λ=0.65μm。

    Double channel heterostructures
    6.
    发明授权
    Double channel heterostructures 失效
    双通道异质结构

    公开(公告)号：US5159421A

    公开(公告)日：1992-10-27

    申请号：US722709

    申请日：1991-06-28

    申请人： Peter A. Wolff

    发明人： Peter A. Wolff

    IPC分类号： H01L29/15 ,  H01L29/739

    CPC分类号： H01L29/739 ,  H01L29/155

    摘要： A semiconductive device includes a dual channel heterostructure in which a pair of quantum wells separated by a thin barrier layer have their band gaps shifted by applied gate voltages between overlap and non-overlap relationships. When the gaps are in an overlap relationship intraband tunneling through the barrier between the two quantum wells serves to introduce charge carriers in the channels to make them conducting. A specific embodiment uses quantum wells of indium arsenide and gallium antimonide in a host lattice of aluminum antimonide.

    摘要翻译： 半导体器件包括双通道异质结构，其中由薄势垒层分隔开的一对量子阱的带隙通过施加的栅极电压在重叠和非重叠关系之间移位。 当间隙处于重叠关系时，穿过两个量子阱之间的势垒的隧道穿过通道中的载流子以使其导通。 具体实施方案使用砷化铟和锑化镓的量子阱在锑化锑的主晶格中。