公开(公告)号：US06632321B2

公开(公告)日：2003-10-14

申请号：US09225825

申请日：1999-01-05

申请人： Thorsten Lill ,  David Mui ,  Michael Grimbergen

发明人： Thorsten Lill ,  David Mui ,  Michael Grimbergen

IPC分类号： C23F100

CPC分类号： H01L22/26 ,  H01J37/321 ,  H01J37/32935 ,  H01J2237/3348 ,  H01L21/67253

摘要： A method and apparatus for monitoring, measuring and/or controlling the etch rate in a dry etch semiconductor wafer processing system. The wafer processing system has a monitoring assembly which comprises an electromagnetic radiation source and detector which interferometrically measures the etch rate. The actual rate of change of the etch as it progresses is measures by this technique and is compared to a model of a desired rate of change in a controller. The error between the actual rate of change and the desired rate of change is then used to vary at least one of the process parameters of the system in a direction tending to null the difference.

摘要翻译： 一种用于在干蚀刻半导体晶片处理系统中监测，测量和/或控制蚀刻速率的方法和装置。 晶片处理系统具有监测组件，其包括电磁辐射源和检测器，其干涉测量蚀刻速率。 当进行蚀刻时，实际的蚀刻速率是通过该技术的测量值，并且与控制器中希望的变化率的模型进行比较。 然后，使用实际变化率与期望变化率之间的误差来改变系统的至少一个过程参数，以便将该差异置零。

公开(公告)号：US6074954A

公开(公告)日：2000-06-13

申请号：US144008

申请日：1998-08-31

申请人： Thorsten Lill ,  Michael Grimbergen

发明人： Thorsten Lill ,  Michael Grimbergen

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/334 ,  H01L21/763 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10861 ,  H01L21/32137 ,  H01L21/763 ,  H01L29/66181

摘要： The present disclosure pertains to our discovery that the use of a particular combination of etchant gases results in the formation of a substantially flat etch front for polysilicon etching applications. In general, the process of the invention is useful for controlling the shape of the etch front during the etchback of polysilicon. Typically, the process comprises isotropically etching the polysilicon using a plasma produced from a plasma source gas comprising a particular combination of reactive species which selectively etch polysilicon. The plasma source gas comprises from about 80% to about 95% by volume of a fluorine-comprising gas, and from about 5% to about 20% by volume of an additive gas selected from a group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof. One preferred mixture is SF.sub.6, Cl.sub.2 and HBr. A preferred method of the invention, used to perform recess etchback of a polysilicon-filled trench in a substrate, comprises the following steps: a) providing a trench 3 formed in a semiconductor structure, wherein the structure includes a substrate 2, at least one gate dielectric layer 6 overlying a surface of the substrate, and at least one etch barrier layer 8 overlying the gate dielectric layer; b) forming a conformal dielectric film 10 overlying the etch barrier layer and the sidewall and bottom of the trench; c) filling the trench with a layer of polysilicon 12 which overlies the conformal dielectric film; and d) isotropically etching the polysilicon back to a predetermined depth within the trench using a plasma produced from the invention plasma source gas. Also disclosed herein is a method of forming a trench capacitor in a single-crystal silicon substrate, the trench capacitor including a dielectric collar and a buried strap.

摘要翻译： 本公开涉及我们的发现，即使用特定的蚀刻气体组合导致形成用于多晶硅蚀刻应用的基本上平坦的蚀刻前沿。 通常，本发明的方法可用于在多晶硅回蚀期间控制蚀刻前沿的形状。 通常，该方法包括使用由等离子体源气体产生的等离子体蚀刻多晶硅，所述等离子体源气体包括选择性蚀刻多晶硅的反应物质的特定组合。 等离子体源气体包括约80体积％至约95体积％的含氟气体，以及约5体积％至约20体积％的选自以下的添加剂气体：由含溴气体， 含氯气体，含碘气体或其组合。 一种优选的混合物是SF 6，Cl 2和HBr。 用于对衬底中的多晶硅填充的沟槽执行凹坑回蚀的本发明的优选方法包括以下步骤：a）提供形成在半导体结构中的沟槽3，其中该结构包括衬底2，至少一个 栅极电介质层6覆盖在衬底的表面上，以及至少一个蚀刻阻挡层8，覆盖在栅极电介质层上; b）形成覆盖在蚀刻阻挡层和沟槽的侧壁和底部上的共形电介质膜10; c）用覆盖保形电介质膜的多晶硅层12填充沟槽; 和d）使用由本发明的等离子体源气体产生的等离子体将多晶硅各向同性蚀刻回到沟槽内的预定深度。 本文还公开了一种在单晶硅衬底中形成沟槽电容器的方法，该沟槽电容器包括介电环和埋入带。

公开(公告)号：US06284665B1

公开(公告)日：2001-09-04

申请号：US09465951

申请日：1999-12-17

申请人： Thorsten Lill ,  Michael Grimbergen

发明人： Thorsten Lill ,  Michael Grimbergen

IPC分类号： H01L213065

CPC分类号： H01L27/10861 ,  H01L21/32137 ,  H01L21/763 ,  H01L29/66181

摘要： The present disclosure pertains to our discovery that the use of a particular combination of etchant gases results in the formation of a substantially flat etch front for polysilicon etching applications. In general, the process of the invention is useful for controlling the shape 104 of the etch front during the etchback of polysilicon. Typically, the process comprises isotropically etching the polysilicon using a plasma produced from a plasma source gas comprising a particular combination of reactive species which selectively etch polysilicon. The plasma source gas comprises from about 80% to about 95% by volume of a fluorine-comprising gas, and from about 5% to about 20% by volume of an additive gas selected from a group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof. A preferred method of the invention, used to perform recess etchback of a polysilicon-filled trench in a substrate, comprises the following steps: a) providing a trench formed in a semiconductor structure, wherein the structure includes a substrate, at least one gate dielectric layer overlying a surface of the substrate, and at least one etch barrier layer overlying the gate dielectric layer; b) forming a conformal dielectric film overlying the etch barrier layer and the sidewall and bottom of the trench; c) filling the trench with a layer of polysilicon which overlies the conformal dielectric film; and d) isotropically etching the polysilicon back to a predetermined depth within the trench using a plasma produced from a plasma source gas comprising a reactive species which selectively etches polysilicon, wherein the plasma source gas comprises from about 80% to about 95% by volume of a fluorine-comprising gas, and from about 5% to about 20% by volume of an additive gas selected from a group consisting of a bromine-comprising gas, a chlorine-comprising gas, an iodine-comprising gas, or a combination thereof. Also disclosed herein is a method of forming a trench capacitor in a single-crystal silicon substrate, the trench capacitor including a dielectric collar and a buried strap.

公开(公告)号：US20140038091A1

公开(公告)日：2014-02-06

申请号：US13750937

申请日：2013-01-25

申请人： Michael Grimbergen

发明人： Michael Grimbergen

IPC分类号： G03F1/80

CPC分类号： G03F1/80

摘要： The present invention provides methods for etching a quartz substrate using a second level photoresist layer disposed thereon as an etching mask. In one embodiment, a method of etching a quartz substrate for forming a photomask includes providing a quartz substrate having a metal containing layer disposed thereon in an etch chamber, applying a first photoresist layer on a substrate, patterning the first photoresist layer to remove a first region of the metal containing layer to expose a first portion of the quartz substrate while remaining a second region of the metal containing layer on the quartz substrate, removing the remaining first photoresist layer on the quartz substrate, applying a second photoresist layer on the exposed quartz substrate and the second region of the metal containing layer, patterning the second photoresist layer to form openings in the second photoresist layer exposing the underlying quartz substrate, and etching the quartz substrate defined by the patterned second photoresist layer.

摘要翻译： 本发明提供了使用设置在其上的第二级光致抗蚀剂层作为蚀刻掩模蚀刻石英衬底的方法。 在一个实施例中，蚀刻用于形成光掩模的石英衬底的方法包括提供在蚀刻室中设置有金属含有层的石英衬底，在衬底上施加第一光致抗蚀剂层，图案化第一光致抗蚀剂层以去除第一 区域，以暴露出石英衬底的第一部分，同时在石英衬底上保留金属含有层的第二区域，去除石英衬底上剩余的第一光致抗蚀剂层，在暴露的石英上施加第二光致抗蚀剂层 衬底和含金属层的第二区域，图案化第二光致抗蚀剂层以在第二光致抗蚀剂层中形成暴露下面的石英衬底的开口，以及蚀刻由图案化的第二光致抗蚀剂层限定的石英衬底。

公开(公告)号：US08092695B2

公开(公告)日：2012-01-10

申请号：US11926482

申请日：2007-10-29

申请人： Michael Grimbergen

发明人： Michael Grimbergen

IPC分类号： C23F1/02

CPC分类号： C23F4/00 ,  G03F1/80 ,  H01J37/32963

摘要： Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.

公开(公告)号：US20070068456A1

公开(公告)日：2007-03-29

申请号：US11561403

申请日：2006-11-19

申请人： Michael Grimbergen ,  Shaoher Pan

发明人： Michael Grimbergen ,  Shaoher Pan

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32458 ,  H01J37/32935

摘要： A substrate processing apparatus comprises a process chamber comprising walls defining an enclosure for processing a substrate, and having at least one window in a wall to allow a radiation to be transmitted therethrough. A process monitoring assembly is provided to monitor a process being conducted in the chamber. The process monitoring assembly comprises a plurality of signal sensors that each receive a radiation reflected from the substrate and that passes through the window, each signal sensor being capable of generating a signal in relation to a received radiation.

摘要翻译： 衬底处理设备包括处理室，其包括限定用于处理衬底的外壳的壁，并且在壁中具有至少一个窗口以允许辐射透过其中。 提供过程监控组件以监视在室中进行的过程。 过程监控组件包括多个信号传感器，每个信号传感器接收从衬底反射并且穿过窗口的辐射，每个信号传感器能够相对于所接收的辐射产生信号。

公开(公告)号：US6129807A

公开(公告)日：2000-10-10

申请号：US944240

申请日：1997-10-06

申请人： Michael Grimbergen ,  Shaoher X. Pan

发明人： Michael Grimbergen ,  Shaoher X. Pan

IPC分类号： H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02

CPC分类号： H01J37/32458 ,  H01J37/32935

摘要： Apparatus for in-situ monitoring of a process in a semiconductor wafer processing system consists of a process chamber having a dome, an enclosure disposed above the chamber, a process monitoring assembly positioned proximate the dome, an opening in the dome, and a window covering the opening. A portion of the apparatus supports the process monitoring assembly to establish a line-of-sight propagation path of monitoring beams from above the dome, through the window to the substrate to facilitate etch depth measurement without encountering interference from high power energy sources proximate the chamber. A method of fabricating a process monitoring apparatus consists of the steps of boring an opening into a dome, positioning the process monitoring assembly in proximity to the dome so as to allow a line-of-sight propagation path of monitoring beams from the process monitoring assembly to a wafer, and covering the opening with a window. The window is permanent or removable dependent upon the type of process monitoring assembly being used in the system.

摘要翻译： 用于在半导体晶片处理系统中对工艺进行现场监测的装置包括具有圆顶的处理室，设置在室上方的外壳，位于圆顶附近定位的过程监控组件，穹顶中的开口，以及窗盖 开幕。 该装置的一部分支持过程监控组件，以建立监视来自穹顶上方的通过窗口到基板的光束的视线传播路径，以便于蚀刻深度测量，以便不会受到靠近腔室的高功率能源的干扰 。 一种制造过程监控装置的方法包括将开口钻入圆顶的步骤，将过程监控组件定位在靠近圆顶的位置，以便允许来自过程监控组件的监视光束的视距传播路径 到晶片，并用窗口覆盖开口。 窗口是永久的或可移动的，取决于系统中使用的过程监视组件的类型。

公开(公告)号：US20130157388A1

公开(公告)日：2013-06-20

申请号：US13543222

申请日：2012-07-06

申请人： Michael Grimbergen

发明人： Michael Grimbergen

IPC分类号： H01L21/66

CPC分类号： H01L22/26 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/32136 ,  H01L22/12

摘要： A method and apparatus for etching a photomask substrate with enhanced process monitoring is provided. In one embodiment, a method of determining an etching endpoint includes performing an etching process on a first tantalum containing layer through a patterned mask layer, directing a radiation source having a first wavelength from about 200 nm and about 800 nm to an area uncovered by the patterned mask layer, collecting an optical signal reflected from the area covered by the patterned mask layer, analyzing a waveform obtained the reflected optical signal reflected from the substrate from a first time point to a second time point, and determining a first endpoint of the etching process when a slope of the waveform is changed about 5 percent from the first time point to the second time point.

公开(公告)号：US20130130409A1

公开(公告)日：2013-05-23

申请号：US13543845

申请日：2012-07-08

申请人： Michael Grimbergen

发明人： Michael Grimbergen

IPC分类号： H01L21/66

CPC分类号： G03F1/80 ,  G03F1/24 ,  H01J37/32963 ,  H01J37/32972

摘要： A method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at different regions of the photomask to obtain desired etch rate or thickness loss is provided. In one embodiment, the method includes performing an etching process on a reflective multi-material layer that includes at least one molybdenum layer and one silicon layer through a patterned mask, directing radiation having a wavelength from about 170 nm and about 800 nm to an area of the multi-material layer uncovered by the patterned mask, collecting an optical signal reflected from the area uncovered by the patterned mask, analyzing a waveform obtained from the reflected optical signal, and determining a first endpoint of the etching process when an intensity of the reflected optical signal is between about 60 percent and about 90 percent less than an initial reflected optical signal.

摘要翻译： 提供了一种用于通过增强的工艺监测蚀刻光掩模衬底的方法和装置，例如通过在光掩模的不同区域提供光学监测以获得期望的蚀刻速率或厚度损失。 在一个实施例中，该方法包括在反射多层材料层上执行蚀刻工艺，所述反射多材料层包括通过图案化掩模的至少一个钼层和一个硅层，将具有约170nm和约800nm的波长的辐射引导到 由所述图案化掩模未覆盖的所述多材料层收集从所述图案化掩模未覆盖的区域反射的光信号，分析从所述反射光信号获得的波形，以及当所述蚀刻工艺的强度 反射光信号比初始反射光信号小约60％至约90％。

公开(公告)号：US20070256784A1

公开(公告)日：2007-11-08

申请号：US11416547

申请日：2006-05-03

申请人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

发明人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01J37/321 ,  H01L21/68764

摘要： A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry. In a preferred embodiment, the reactor further includes apparatus for effecting axially symmetrical adjustments of plasma distribution, which may be either (or both) elevation apparatus for changing the location of said inner and outer portions relative to one another along said vertical axis of symmetry, or apparatus for apportioning the RF power levels applied to the inner and outer applicator portions.

摘要翻译： 一种用于处理工件的等离子体反应器包括处理室，该处理室包括包括天花板并且具有大致垂直于所述天花板的对称垂直轴线的外壳，所述室内的工件支撑基座和大体上面对天花板，处理气体注入装置 腔室和耦合到腔室的真空泵。 反应器还包括覆盖天花板并包括径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到所述内部和外部施加器部分的RF电力设备，以及能够使工件支撑基座 或外部施加器部分围绕垂直于所述对称轴线的径向轴线，并且能够围绕所述对称轴线旋转所述工件支撑基座。 在优选实施例中，反应器还包括用于实现等离子体分布的轴对称调节的装置，其可以是（或两个）升降装置，用于沿所述垂直对称轴线相对于彼此改变所述内部和外部部分的位置， 或用于分配施加到内部和外部施加器部分的RF功率电平的装置。