公开(公告)号：US06812487B1

公开(公告)日：2004-11-02

申请号：US10601417

申请日：2003-06-23

申请人： Tie-Jiang Wu ,  Chien-Chang Huang ,  Yu-Wei Ting ,  Bo-Ching Jiang ,  Tse-Main Kuo

发明人： Tie-Jiang Wu ,  Chien-Chang Huang ,  Yu-Wei Ting ,  Bo-Ching Jiang ,  Tse-Main Kuo

IPC分类号： H01L2358

CPC分类号： H01L27/10861 ,  G11C11/401 ,  G11C29/50 ,  G11C2029/0403 ,  G11C2029/5002 ,  H01L22/34 ,  H01L29/66181

摘要： A test key for validating the doping concentration of buried layers within a deep trench capacitor. The test key is deposited in the scribe line region of a wafer. In the test key of the present invention, the deep trench capacitor is deposited in the scribe line region and has three buried layers of three doping concentrations. An isolation region is deposited in the capacitor, and a first plug, a second and a third plug are coupled to three positions of one buried layer of the three respectively. The present invention determines whether the doping concentration of buried layers within a deep trench capacitor is valid by a first resistance measured between the first plug and the second plug and a second resistance measured between the second plug and the third plug.

摘要翻译： 一种用于验证深沟槽电容器内埋层掺杂浓度的测试键。 测试键被沉积在晶片的划线区域中。 在本发明的测试键中，深沟槽电容器沉积在划线区域中并且具有三个掺杂浓度的三个掩埋层。 隔离区域沉积在电容器中，并且第一插头，第二和第三插头分别耦合到三个一个埋层的三个位置。 本发明通过在第一插头和第二插头之间测量的第一电阻以及在第二插头和第三插头之间测量的第二电阻来确定深沟槽电容器内的埋层的掺杂浓度是否有效。

公开(公告)号：US06788598B2

公开(公告)日：2004-09-07

申请号：US10448661

申请日：2003-05-30

申请人： Ming-Cheng Chang ,  Tie-Jiang Wu ,  Jeng-Ping Lin ,  Tse-Main Kuo ,  Hsu-Cheng Fan

发明人： Ming-Cheng Chang ,  Tie-Jiang Wu ,  Jeng-Ping Lin ,  Tse-Main Kuo ,  Hsu-Cheng Fan

IPC分类号： G11C700

CPC分类号： H01L27/10861 ,  G11C11/401 ,  G11C29/50 ,  G11C2029/5002 ,  G11C2029/5004 ,  H01L22/34 ,  H01L27/0207 ,  H01L27/10891 ,  H01L29/66181

摘要： A test key disposed on a scribe line of a wafer. The test key includes: two active areas disposed on the substrate; two first deep trench capacitors disposed on the substrate outside the two active areas; a rectangular active word line disposed on the substrate covering the first deep trench capacitors and the active areas; first and second passing word lines disposed on one side of the rectangular active word line and across the parallel active areas; a third passing word line disposed on another side of the rectangular active word line and across another end of the two active areas; two second deep trench capacitors disposed on the substrate under where the two first passing word lines overlap the two active areas; and four contacts disposed on the first active areas between the first and second word lines and between the third and the rectangular active word line.