摘要:
An implementation of a serial access memory register facility which allows the external selection of the portion of the SAM to be scanned out. A control signal is provided which causes the reloading of serial access memory address counter causing the reloading of serial access memory address counter causing the serial scanning to shift from one to another of the serial access memory registers. The result is an ability to select a stopping point when scanning out of the serial access memory. Thus, the present invention implements the ability in a video random access memory to specify both the starting and ending points of the data to be scanned out of the serial access memory. The preferred embodiment replaces the QSF status pin with a control pin to preserve the packaging configuration of standard VRAMs.
摘要:
An implementation of a serial access memory register that facilitates the selecting from two alternate frame buffers on a per pixel basis. The frame buffers are each stored in a portion of a row in a single video RAM. Following data transfer to the serial access memory register, data from each of the two frame buffers is available. A double buffer select signal controls the selection of which half of the serial access memory register will put data on the output bus for each serial clock signal. The serial clock increments the address pointers in both halves of the serial access memory port simultaneously.
摘要:
The selection in a dual port memory device of data from a serial access memory register having a lower byte and an upper byte of data is described herein. In one embodiment, the register is partitioned lengthwise into two sections, corresponding to, for example, a frame buffer A and a frame buffer B. On each serial clock cycle, frame buffer A or frame buffer B for each byte of data may be selected from the register. Each of the selected bytes of data are then passed to a serial output port. In another embodiment, the lower byte of data corresponds to, for example, a frame buffer A and the upper byte corresponds to a frame buffer B. Then either the upper byte or lower byte of data is selected to be output on the serial port. In yet a further embodiment, the serial access memory register is partitioned lengthwise into two sections, each section corresponding to, for example, a frame buffer and the bytes of data correspond to another buffer, then either the lower byte or upper byte is selected to be output on the serial port.
摘要:
A dual-port DRAM in which a single serial latch is shared between two pairs of folded bit lines from two arrays of memory cells. A first set of mux devices selects one of the two pairs of folded bit lines from each of the arrays, and a second set of mux devices selectively couple one of the remaining folded bit line pairs to either the parallel port or the serial latch for access to the serial port. This arrangement greatly decreases the consumption of chip real estate. At the same time, it makes unlimited vertical scrolling possible through the use of a copy mode that can be carried out in two operating cycles, and facilitates masked writing, while at the same time reducing clocking complexity.
摘要:
Methods and apparatus for operating a secondary sense amplifier according to different timings. Embodiments of the invention generally provide a secondary sense amplifier configured to dynamically adjust its timing according to a need for data in an output buffer. In one embodiment, the secondary sense amplifier is set (causing data to be driven out) by a signal, SSA_SET, the timing of which is adjusted on the basis of a predefined delay and a need for data at the output buffer.
摘要:
An invention is disclosed which implements bit line redundancy in a memory module, such as a dynamic random access memory (DRAM), in accordance with a block write operation. The block write operation is commonly used in dual port RAMs, sometimes referred to as video random access memories (VRAM). Specifically, a block write operation allows a plurality of bits of data to be written to a plurality of adjacent bit lines defined by a column address. The precise combination of adjacent bit lines selected by the column address is designated by an address mask. The invention provides a memory module with a redundant bit decoder that incorporates an address masking function into the redundant bit decoder during block write operations and also bypasses a masking function during normal read and write operations. This redundant bit decoder allows a single redundant bit line to replace any single defective bit line of the selected group of block write bit lines. It eliminates the need for replacing all the selected bit lines and, thereby, saves silicon area and maximizes the utilization of available redundant bit elements.
摘要:
A high performance latch for read and write operations in RAM having a Complimentary Interlock circuit that eliminates the need for external timing to the RAM which might limit its high performance operation. For both read and write operations, the complementary interlock circuit extends a latching signal until valid data appears on the read or write data lines, thus preventing a valid data miss.
摘要:
Methods and apparatus for operating a secondary sense amplifier according to different timings. Embodiments of the invention generally provide a secondary sense amplifier configured to dynamically adjust its timing according to a need for data in an output buffer. In one embodiment, the secondary sense amplifier is set (causing data to be driven out) by a signal, SSA_SET, the timing of which is adjusted on the basis of a predefined delay and a need for data at the output buffer.
摘要:
A circuit for detecting an input signal, the circuit having an input node and an output node, includes a first latch having a set input coupled to the input node, for detecting falling transitions at the input node. A second latch having a set input coupled to the input node, detects rising transitions at the input node. A first logic device, responsive to outputs of the first and second latches, detects that an input signal has been received at both the first and second latches. A second logic device, responsive to a complement output of both the first and second latches, resets both the first and second latches.
摘要:
Circuits and refresh address circuits for providing a refresh address, and methods for refreshing memory cells. One such method includes refreshing a first plurality of memory cells and interrupting the refreshing of the first plurality of memory cells. A second plurality of memory cells is refreshed, at least one of the second plurality of memory cells the same as one of the first plurality of memory cells. Refreshing of the first plurality of memory cells is resumed following the refreshing of the second plurality of memory cells. One such refresh address circuit includes a refresh address counter configured to provide addresses to be refreshed and a refresh address interrupt circuit configured to interrupt the provision of addresses. An alternate refresh address circuit is configured to provide an alternate address and the refresh address counter resumes providing the addresses responsive to completing the refreshing of the alternate address.