公开(公告)号：US07160822B2

公开(公告)日：2007-01-09

申请号：US10514660

申请日：2003-05-19

申请人： Timothy S. Jones ,  Patrick Howe ,  Ray Murray ,  Eric Le Ru

发明人： Timothy S. Jones ,  Patrick Howe ,  Ray Murray ,  Eric Le Ru

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0259 ,  H01L29/127 ,  H01L33/06 ,  H01S5/32366 ,  H01S5/3403 ,  H01S5/3412 ,  H01S5/34306 ,  Y10S438/962

摘要： A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots covered by a spacer layer with strained areas extending there through. The spacer layer then forms a template upon which quantum dots of an active layer may be formed with a surface with a surface density and formation that is influenced by the underlying first layer of quantum dots. This allows a choice of growth parameters more favourable to the formation of quantum dots in the active layer emitting at long wavelengths with a narrow inhomogeneous broadening. As an example, the active layer of quantum dots may be formed at a lower temperature than the first layer of quantum dots. The quantum dots of the active layer are then subject to less intermixing with the surrounding spacer and capping layers, and can also preserve a more strain-relaxed state, which results in a longer wavelength emission with a narrower inhomogeneous broadening. This method is particularly well suited to the growth of the active region of an optoelectronic device on a GaAs substrate.

摘要翻译： 一种形成包含半导体量子点的光电子器件的有源区的方法，该半导体量子点的基态发射在大致293K的温度下以超过1350nm的波长发生，通过形成由间隔层覆盖的第一层量子点，其具有应变区 延伸到那里 间隔层然后形成模板，有源层的量子点可以在其上形成具有表面密度和受下游第一量子点影响的形式的表面。 这允许选择更有利于在具有窄非均匀扩展的长波长发射的有源层中形成量子点的生长参数。 作为示例，量子点的活性层可以形成在比第一层量子点低的温度下。 有源层的量子点然后与周围的间隔物和覆盖层进行较少的混合，并且还可以保持更多的应变松弛状态，这导致较窄的不均匀扩展的较长波长发射。 该方法特别适用于在GaAs衬底上的光电器件的有源区的生长。

公开(公告)号：US20050227386A1

公开(公告)日：2005-10-13

申请号：US10514660

申请日：2003-05-19

申请人： Timothy Jones ,  Patrick Howe ,  Ray Murray ,  Erie Le Rus

发明人： Timothy Jones ,  Patrick Howe ,  Ray Murray ,  Erie Le Rus

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L29/12 ,  H01L33/06 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01L21/00

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0259 ,  H01L29/127 ,  H01L33/06 ,  H01S5/32366 ,  H01S5/3403 ,  H01S5/3412 ,  H01S5/34306 ,  Y10S438/962

摘要： A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots covered by a spacer layer with strained areas extending there through. The spacer layer then forms a template upon which quantum dots of an active layer may be formed with a surface with a surface density and formation that is influenced by the underlying first layer of quantum dots. This allows a choice of growth parameters more favourable to the formation of quantum dots in the active layer emitting at long wavelengths with a narrow inhomogeneous broadening. As an example, the active layer of quantum dots may be formed at a lower temperature than the first layer of quantum dots. The quantum dots of the active layer are then subject to less intermixing with the surrounding spacer and capping layers, and can also preserve a more strain-relaxed state, which results in a longer wavelength emission with a narrower inhomogeneous broadening. This method is particularly well suited to the growth of the active region of an optoelectronic device on a GaAs substrate.

摘要翻译： 一种形成包含半导体量子点的光电子器件的有源区的方法，该半导体量子点的基态发射在大致293K的温度下以超过1350nm的波长发生，通过形成由间隔层覆盖的第一层量子点，其具有应变区 延伸到那里 间隔层然后形成模板，有源层的量子点可以在其上形成具有表面密度和受下游第一量子点影响的形式的表面。 这允许选择更有利于在具有窄非均匀扩展的长波长发射的有源层中形成量子点的生长参数。 作为示例，量子点的活性层可以形成在比第一层量子点低的温度下。 有源层的量子点然后与周围的间隔物和覆盖层进行较少的混合，并且还可以保持更多的应变松弛状态，这导致较窄的不均匀扩展的较长波长发射。 该方法特别适用于在GaAs衬底上的光电器件的有源区的生长。

公开(公告)号：US20140138511A1

公开(公告)日：2014-05-22

申请号：US13694289

申请日：2012-11-16

申请人： Patrick Howe

发明人： Patrick Howe

IPC分类号： E04H12/22

CPC分类号： E04H12/2269 ,  E04H12/2261

摘要： The Z Bracket is a bracket that leans the post back from a 90 degree by 10 degrees with an 80 degree angle that allows the post to have more strength to hold a shade connected to the post and to a building opposite the post and bracket and gives the overall appearance unique and practical for patio areas and any area which a shaded area is preferred.

摘要翻译： Z支架是支架，将支柱从90度向后倾斜10度，角度为80度，允许柱子具有更多的强度以保持连接到柱的阴影和与柱和支架相对的建筑物 整体外观独特而实用，适用于庭院区域和阴影区域优先选择的任何区域。

公开(公告)号：US20070098457A1

公开(公告)日：2007-05-03

申请号：US11262576

申请日：2005-10-31

申请人： James Chappell ,  Patrick Howe ,  Michael Thompson

发明人： James Chappell ,  Patrick Howe ,  Michael Thompson

IPC分类号： G03G15/09

CPC分类号： G03G15/0935

摘要： A development subsystem is used to develop toner particles transported by semiconductive carrier particles. The development subsystem includes a developer housing for retaining a quantity of developer having semiconductive carrier particles and toner particles, a first magnetic roll having a stationary core with at least one magnet and a sleeve that rotates about the stationary core of the first magnetic roll, a second magnetic roll having a stationary core with at least one magnet and a sleeve that rotates about the stationary core of the second magnetic roll, a motor coupled to the first and the second magnetic rolls to drive the rotating sleeves of the first and the second magnetic rolls at different velocities relative to a velocity for a photoreceptor that rotates in proximity to the first and second magnetic rolls, the first and second magnetic rolls being driven in a direction that is with the direction of rotation of the photoreceptor so that the first and the second magnetic rolls carry semiconductive carrier particles and toner particles through a development zone formed by the first and the second magnetic rolls that is proximate to the photoreceptor.

摘要翻译： 开发子系统用于开发通过半导体载体颗粒传输的调色剂颗粒。 开发子系统包括用于保持一定数量的具有半导体载体颗粒和调色剂颗粒的显影剂的显影剂外壳，具有至少一个磁体的固定磁芯的第一磁性辊和围绕第一磁性辊的固定磁芯旋转的套筒， 第二磁辊具有带有至少一个磁体的固定磁芯和围绕第二磁性辊的固定磁芯旋转的套筒，耦合到第一和第二磁性辊的电动机，以驱动第一和第二磁性的旋转套筒 以相对于第一和第二磁辊附近旋转的感光体的速度的不同速度滚动，第一和第二磁辊沿与感光体的旋转方向一致的方向驱动，使得第一和第二磁辊 第二磁辊通过由冷杉形成的开发区承载半导体载体颗粒和调色剂颗粒 st和靠近感光体的第二磁辊。

公开(公告)号：US20070098456A1

公开(公告)日：2007-05-03

申请号：US11262575

申请日：2005-10-31

申请人： Michael Thompson ,  James Chappell ,  Steven Hart ,  Patrick Howe ,  Ajay Kumar ,  Steven LeRoy ,  Paul Morehouse ,  Palghat Ramesh ,  Fei Xiao

发明人： Michael Thompson ,  James Chappell ,  Steven Hart ,  Patrick Howe ,  Ajay Kumar ,  Steven LeRoy ,  Paul Morehouse ,  Palghat Ramesh ,  Fei Xiao

IPC分类号： G03G15/09

CPC分类号： G03G15/0935 ,  G03G2215/0634

摘要： A development subsystem is used to develop developer having semiconductive carrier particles and toner particles. The development subsystem includes a developer housing, for retaining a quantity of developer having semiconductive carrier particles and toner particles, a first magnetic roll having a stationary core with at least one magnet and a sleeve that rotates about the stationary core of the first magnetic roll, a second magnetic roll having a stationary core with at least one magnet and a sleeve that rotates about the stationary core of the second magnetic roll, and a motor coupled to the first and the second magnetic rolls to drive the rotating sleeves of the first and the second magnetic rolls in a direction that is against the direction of a photoreceptor that rotates in proximity to the first and the second magnetic rolls. The first and the second magnetic rolls carry semiconductive carrier particles and toner particles through a development zone formed by the first and the second magnetic rolls.

摘要翻译： 开发子系统用于开发具有半导体载体颗粒和调色剂颗粒的显影剂。 开发子系统包括用于保持一定量的具有半导体载体颗粒和调色剂颗粒的显影剂的显影剂外壳，具有至少一个磁体的固定磁芯的第一磁性辊和围绕第一磁性辊的固定磁芯旋转的套筒， 第二磁辊，具有带有至少一个磁体的固定磁芯和围绕第二磁性辊的固定磁芯旋转的套筒，以及耦合到第一和第二磁性辊的电动机，以驱动第一和第二磁性辊的旋转套筒 在与第一和第二磁辊相邻的感光体的方向上的第二磁辊。 第一和第二磁辊通过由第一和第二磁辊形成的显影区域承载半导体载体颗粒和调色剂颗粒。