Articles with diamond coating formed thereon by vapor-phase synthesis
    3.
    发明授权
    Articles with diamond coating formed thereon by vapor-phase synthesis 失效
    通过气相合成在其上形成金刚石涂层的制品

    公开(公告)号:US5935323A

    公开(公告)日:1999-08-10

    申请号:US945212

    申请日:1998-03-20

    摘要: Articles with a tenaciously adherent diamond coating are made by forming a diamond coating on a base material by vapor-phase synthesis without causing any warpage of the coating. The diamond coating layer is formed on the surface of a base material having a number of pores formed by electric discharge or laser beams and having a depth of 0.0001-0.2 mm and a diameter of 0.001-0.02 mm. The pores may be connected to one another to form a groove. Suitable examples of the base material include molybdenum, tungsten, silicon, tungsten carbide, silicon carbide, silicon nitride, and cemented carbide mainly comprising tungsten carbide and cobalt and/or nickel.

    摘要翻译: PCT No.PCT / JP96 / 01052 Sec。 371日期:1998年3月20日 102(e)1998年3月20日PCT PCT 1996年4月18日PCT公布。 公开号WO96 / 34131 日期1996年10月31日具有强力粘附金刚石涂层的文章通过气相合成在基材上形成金刚石涂层而不会引起涂层翘曲而制成。 金刚石涂层形成在具有多个由放电或激光束形成的孔的基材的表面上,其深度为0.0001-0.2mm,直径为0.001-0.02mm。 孔可以彼此连接以形成凹槽。 基材的合适实例包括钼,钨,硅,碳化钨,碳化硅,氮化硅和主要包含碳化钨和钴和/或镍的硬质合金。

    Contacting method and apparatus in contact copying
    4.
    发明授权
    Contacting method and apparatus in contact copying 失效
    接触式接触方法和装置

    公开(公告)号:US4576475A

    公开(公告)日:1986-03-18

    申请号:US756568

    申请日:1985-07-18

    CPC分类号: G03F7/70691 G03B27/18

    摘要: A contacting method comprises the steps of holding a photomask and a wafer at a predetermined interval, curving at least one of the photomask and the wafer so as to form a convexity relative to the other, and moving the photomask and the wafer relative to each other to bring them into intimate contact with each other.

    摘要翻译: 接触方法包括以预定间隔保持光掩模和晶片的步骤,弯曲光掩模和晶片中的至少一个,以便相对于另一个形成凸面,并且相对于彼此移动光掩模和晶片 使他们彼此亲密接触。