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公开(公告)号:US08318412B2
公开(公告)日:2012-11-27
申请号:US12871251
申请日:2010-08-30
申请人: Tokashiki Ken , Chul-ho Shin , Sang-Kuk Kim , Do-haing Lee , Dong-seok Lee
发明人: Tokashiki Ken , Chul-ho Shin , Sang-Kuk Kim , Do-haing Lee , Dong-seok Lee
IPC分类号: G03F7/26
CPC分类号: H01L21/31138 , H01L21/0273 , H01L21/31144 , H01L21/76816 , H01L27/10855
摘要: A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.
摘要翻译: 通过包括修整和成型抗蚀剂图案的工艺的方法制造半导体器件。 形成在基板上的抗蚀剂层被曝光和显影以形成抗蚀剂图案。 使用第一气体等离子体来修整抗蚀剂图案以改变抗蚀剂图案的轮廓。 使用第二气体等离子体增加修整的抗蚀剂图案的宽度以形成经处理的抗蚀剂图案。
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公开(公告)号:US20110159442A1
公开(公告)日:2011-06-30
申请号:US12871251
申请日:2010-08-30
申请人: Tokashiki Ken , Chul-ho Shin , Sang-Kuk Kim , Do-haing Lee , Dong-seok Lee
发明人: Tokashiki Ken , Chul-ho Shin , Sang-Kuk Kim , Do-haing Lee , Dong-seok Lee
IPC分类号: G03F7/20
CPC分类号: H01L21/31138 , H01L21/0273 , H01L21/31144 , H01L21/76816 , H01L27/10855
摘要: A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.
摘要翻译: 通过包括修整和成型抗蚀剂图案的工艺的方法制造半导体器件。 形成在基板上的抗蚀剂层被曝光和显影以形成抗蚀剂图案。 使用第一气体等离子体来修整抗蚀剂图案以改变抗蚀剂图案的轮廓。 使用第二气体等离子体增加修整的抗蚀剂图案的宽度以形成经处理的抗蚀剂图案。
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公开(公告)号:US08847342B2
公开(公告)日:2014-09-30
申请号:US13600422
申请日:2012-08-31
申请人: Woo-cheol Lee , Tokashiki Ken , Hyung-joon Kwon , Myung-hoon Jung
发明人: Woo-cheol Lee , Tokashiki Ken , Hyung-joon Kwon , Myung-hoon Jung
IPC分类号: H01L27/22
CPC分类号: C23F1/12 , C23F1/02 , C23F4/00 , G11B5/3163 , H01L27/228 , H01L43/08 , H01L43/12
摘要: A method of manufacturing a magnetic device includes forming a stack structure, the stack structure including a magnetic layer, and etching the stack structure by using an etching gas, the etching gas including at least 80% by volume of H2 gas.
摘要翻译: 一种制造磁性器件的方法包括形成叠层结构,所述堆叠结构包括磁性层,并通过使用蚀刻气体蚀刻所述堆叠结构,所述蚀刻气体至少包含80体积%的H 2气体。
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公开(公告)号:US09312478B2
公开(公告)日:2016-04-12
申请号:US13589708
申请日:2012-08-20
申请人: Hak-sun Lee , Tokashiki Ken , Myeong-cheol Kim , Hyung-joon Kwon , Sang-min Lee , Woo-cheol Lee , Myung-hoon Jung
发明人: Hak-sun Lee , Tokashiki Ken , Myeong-cheol Kim , Hyung-joon Kwon , Sang-min Lee , Woo-cheol Lee , Myung-hoon Jung
CPC分类号: H01L43/12 , B81C1/00531 , B82Y10/00 , B82Y25/00 , G11B5/3163 , H01L21/3065 , H01L27/228 , Y10T428/24479
摘要: Magnetic devices, and methods of manufacturing the same, include a stack structure including at least one magnetic layer, etched using an etching gas including at least 70 volume percent of a hydrogen-containing gas and at least 2 volume percent of CO gas.
摘要翻译: 磁性器件及其制造方法包括使用包括至少70体积%的含氢气体和至少2体积%的CO气体的蚀刻气体蚀刻的至少一个磁性层的堆叠结构。
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