公开(公告)号：US20240212979A1

公开(公告)日：2024-06-27

申请号：US18598613

申请日：2024-03-07

Applicant: Tokyo Electron Limited

Inventor： Ikko TANAKA ,  Atsushi TERASAWA

IPC: H01J37/302 ,  H01J37/20 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01J37/3023 ,  H01J37/20 ,  H01J37/32449 ,  H01L21/6831

Abstract: A method includes (a) generating plasma in a chamber in a plasma processing apparatus. The plasma processing apparatus includes a substrate support in the chamber. The substrate support includes a first portion to support a substrate and a second portion to support an edge ring. The first portion includes a first electrode, and the second portion includes a second electrode. The method further includes (b) cyclically applying, to draw ions from the plasma to the substrate support, a pulse of a voltage to the first electrode and the second electrode. The method further includes (c) determining an amount of wear of the edge ring based on a first voltage value of the first electrode and a second voltage value of the second electrode measured when the pulse of the voltage is applied to the first electrode and the second electrode.

公开(公告)号：US20210335577A1

公开(公告)日：2021-10-28

申请号：US17241442

申请日：2021-04-27

Applicant: Tokyo Electron Limited

Inventor： Ikko TANAKA ,  Lifu LI ,  Hiroshi TSUJIMOTO ,  Atsushi TERASAWA

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.