公开(公告)号：US20240071723A1

公开(公告)日：2024-02-29

申请号：US18237067

申请日：2023-08-23

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Koki TANAKA ,  Ryu NAGAI ,  Masahiko YOKOI ,  Ikko TANAKA

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J2237/334

Abstract: An etching method includes providing a substrate on a substrate support in a chamber of a plasma processing apparatus. The etching method further includes etching the substrate with plasma generated in the chamber, thereby forming a recess in the substrate. In the etching, an electrical bias is supplied to the substrate support, to attract ions from the plasma into the substrate. In the etching, at least one of a bias frequency, which is a reciprocal of a time length of a waveform cycle of the electrical bias, and a pulse duty ratio of a pulsed electrical bias is modified to maintain an ion energy flux to the substrate.

公开(公告)号：US20240212979A1

公开(公告)日：2024-06-27

申请号：US18598613

申请日：2024-03-07

Applicant: Tokyo Electron Limited

Inventor： Ikko TANAKA ,  Atsushi TERASAWA

IPC: H01J37/302 ,  H01J37/20 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01J37/3023 ,  H01J37/20 ,  H01J37/32449 ,  H01L21/6831

Abstract: A method includes (a) generating plasma in a chamber in a plasma processing apparatus. The plasma processing apparatus includes a substrate support in the chamber. The substrate support includes a first portion to support a substrate and a second portion to support an edge ring. The first portion includes a first electrode, and the second portion includes a second electrode. The method further includes (b) cyclically applying, to draw ions from the plasma to the substrate support, a pulse of a voltage to the first electrode and the second electrode. The method further includes (c) determining an amount of wear of the edge ring based on a first voltage value of the first electrode and a second voltage value of the second electrode measured when the pulse of the voltage is applied to the first electrode and the second electrode.

公开(公告)号：US20240213002A1

公开(公告)日：2024-06-27

申请号：US18598743

申请日：2024-03-07

Applicant: Tokyo Electron Limited

Inventor： Ikko TANAKA

IPC: H01J37/32

CPC classification number: H01J37/32862 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32449 ,  H01J2237/334

Abstract: A plasma processing method includes (a) placing a substrate onto a substrate support surface of a substrate support in a chamber in a plasma processing apparatus. The plasma processing method further includes (b) etching a film on the substrate with plasma. The plasma processing method further includes (c) cleaning the chamber with plasma. In (b) and (c), a bias voltage including a pulse of a direct current voltage and having a pulse waveform is cyclically applied to a bias electrode in the substrate support. The bias voltage has a bias frequency being an inverse of a duration of a waveform cycle of the pulse waveform. The bias frequency is higher in (c) than in (b).

公开(公告)号：US20210335577A1

公开(公告)日：2021-10-28

申请号：US17241442

申请日：2021-04-27

Applicant: Tokyo Electron Limited

Inventor： Ikko TANAKA ,  Lifu LI ,  Hiroshi TSUJIMOTO ,  Atsushi TERASAWA

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.

公开(公告)号：US20210305030A1

公开(公告)日：2021-09-30

申请号：US17199001

申请日：2021-03-11

Applicant: Tokyo Electron Limited

Inventor： Hiroshi TSUJIMOTO ,  Ikko TANAKA

IPC: H01J37/32

Abstract: Provided is a substrate processing apparatus comprising: a substrate support on which a substrate is mounted; a first radio frequency power supply that outputs first radio frequency power with a first frequency to the substrate support; a second radio frequency power supply that outputs second radio frequency power with a second frequency lower than the first frequency to the substrate support; a sensor that detects reflected waves received from the substrate support and a processor that controls the first radio frequency power supply so that an effective power, which is equal to a difference between the power of the reflected waves detected by the sensor and the output power of the first radio frequency power supply, reaches a set value.