公开(公告)号：US20170242344A1

公开(公告)日：2017-08-24

申请号：US15048619

申请日：2016-02-19

Applicant: Tokyo Electron Limited

Inventor： Michael Carcasi ,  Mark Somervell ,  Carlos Fonseca

IPC: G03F7/20

CPC classification number: G03F7/70516 ,  G03F7/2004 ,  G03F7/2022 ,  G03F7/705 ,  G03F7/70616

Abstract: Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes calibrating initial conditions for a simulation of at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. Further, the method may include performing a lithography process using the previously-determined at least one process parameter.

公开(公告)号：US12112107B2

公开(公告)日：2024-10-08

申请号：US17025651

申请日：2020-09-18

Applicant: Tokyo Electron Limited

Inventor： Jun Shinagawa ,  Megan Wooley ,  Toshihiro Kitao ,  Carlos Fonseca

IPC: G06F30/33 ,  G06F111/10

CPC classification number: G06F30/33 ,  G06F2111/10

Abstract: Aspects of the disclosure provide a method for wafer result prediction. The method includes determining predictor parameters of a semiconductor process using domain knowledge that includes knowledge of the semiconductor process, a processing tool associated with the semiconductor process, a metrology tool, and/or the wafer. The method also includes removing collinearity among the predictor parameters to obtain key predictor parameters, and selecting a subset of the key predictor parameters based on metrology data of the wafer obtained from the metrology tool. The method further includes building a virtual metrology (VM) model on the subset of the key predictor parameters and may include predicting wafer results using the VM model.

公开(公告)号：US10048594B2

公开(公告)日：2018-08-14

申请号：US15048619

申请日：2016-02-19

Applicant: Tokyo Electron Limited

Inventor： Michael Carcasi ,  Mark Somervell ,  Carlos Fonseca

IPC: G03F7/20

Abstract: Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes calibrating initial conditions for a simulation of at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. Further, the method may include performing a lithography process using the previously-determined at least one process parameter.