公开(公告)号：US11282721B2

公开(公告)日：2022-03-22

申请号：US16661335

申请日：2019-10-23

申请人： TOKYO ELECTRON LIMITED

发明人： Hiroki Iriuda ,  Kohei Fukushima

IPC分类号： H01L21/67 ,  H01L21/673 ,  C23C16/455 ,  C23C16/458

摘要： A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.

公开(公告)号：US11859285B2

公开(公告)日：2024-01-02

申请号：US17472920

申请日：2021-09-13

申请人： Tokyo Electron Limited

发明人： Hiroki Iriuda ,  Kuniyasu Sakashita

IPC分类号： C23C16/455 ,  H01L21/02 ,  C23C16/52

CPC分类号： C23C16/45578 ,  C23C16/45546 ,  C23C16/52 ,  H01L21/0228

摘要： A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.

公开(公告)号：US09425040B2

公开(公告)日：2016-08-23

申请号：US14029366

申请日：2013-09-17

申请人： TOKYO ELECTRON LIMITED

发明人： Tomoyuki Obu ,  Masaki Kurokawa ,  Hiroki Iriuda

IPC分类号： H01L21/02 ,  C23C16/30 ,  C23C16/40 ,  C23C16/455 ,  H01L21/311

CPC分类号： H01L21/022 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31111

摘要： A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber, wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form a laminated film including the silicon oxynitride film and the silicon oxide film.

摘要翻译： 形成层压膜的方法包括：在装载在反应室中的多个目标物体上形成氧化硅膜，通过供给硅源，氧化剂和氮化物，在多个目标物体上形成氮氧化硅膜 在反应室中，在多个目标物体上重复进行预定次数的形成氧化硅膜并形成氧氮化硅膜，形成包含氮氧化硅膜和氧化硅膜的层叠膜。

公开(公告)号：US11885024B2

公开(公告)日：2024-01-30

申请号：US17472959

申请日：2021-09-13

申请人： Tokyo Electron Limited

发明人： Hiroki Iriuda ,  Reita Igarashi ,  Kuniyasu Sakashita

IPC分类号： C23C16/455 ,  C23C16/52 ,  H01L21/67 ,  H01L21/02

CPC分类号： C23C16/52 ,  C23C16/45546 ,  C23C16/45563 ,  H01L21/0228 ,  H01L21/67017

摘要： A gas introduction structure extends in a longitudinal direction of a processing container having a substantially cylindrical shape to supply gas into the processing container. The gas introduction structure includes an introduction section that partitions an introduction chamber, an ejection section that partitions a plurality of ejection chambers each including a plurality of gas holes through which the gas is ejected into the processing container, and a branch section that partitions a branch chamber connected to the introduction chamber. The branch chamber is branched to correspond to the number of ejection chambers in a tournament manner and connected to the ejection chambers.

公开(公告)号：US09574284B2

公开(公告)日：2017-02-21

申请号：US15018949

申请日：2016-02-09

申请人： TOKYO ELECTRON LIMITED

发明人： Youichirou Chiba ,  Hiroki Iriuda ,  Daisuke Suzuki

IPC分类号： H01L21/00 ,  H01L31/02 ,  C30B1/02 ,  H01L21/225 ,  H01L21/324

CPC分类号： C30B1/023 ,  H01L21/2252 ,  H01L21/3247

摘要： A method of filling a depression of a workpiece is provided. The method includes forming a first thin film made of a semiconductor material substantially not containing an impurity along a wall surface which defines the depression, forming an epitaxial region conforming to crystals of the semiconductor substrate from the semiconductor material of the first thin film moved toward a bottom of the depression by annealing, etching the first thin film remaining on the wall surface, performing gas phase doping upon the epitaxial region, forming a second thin film made of a semiconductor material substantially not containing an impurity along the wall surface, further forming an epitaxial region from the semiconductor material of the second thin film moved toward the bottom of the depression by annealing, and performing gas phase doping upon the second thin film remaining on the wall surface and the epitaxial region.

摘要翻译： 提供了填充工件的凹陷的方法。 该方法包括：形成由沿着限定凹陷的壁表面基本上不含有杂质的半导体材料制成的第一薄膜，从第一薄膜的半导体材料形成符合半导体衬底的晶体的外延区域， 通过退火蚀刻凹陷的底部，蚀刻保留在壁表面上的第一薄膜，对外延区进行气相掺杂，形成由沿着壁表面基本上不含杂质的半导体材料制成的第二薄膜，进一步形成 从第二薄膜的半导体材料的外延区域通过退火向凹陷的底部移动，并且对保留在壁表面和外延区域上的第二薄膜进行气相掺杂。