公开(公告)号：US11848189B2

公开(公告)日：2023-12-19

申请号：US17009834

申请日：2020-09-02

Applicant: Tokyo Electron Limited

Inventor： Takahiro Shiozawa ,  Hiroki Tadatomo ,  Akiko Kai ,  Hiroshi Ichinomiya

IPC: H01L21/06 ,  H01L21/027 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/67028 ,  H01L21/027 ,  H01L21/6715 ,  H01L21/68764

Abstract: A substrate processing method includes supplying a developing liquid configured to form a resist pattern onto a surface of a substrate on which a resist film is formed; performing multiple cycles of a cleaning processing of supplying a modifying liquid containing a modifying agent having a hydrophilic group onto the surface of the substrate on which the resist pattern is formed and supplying a rinse liquid configured to remove the modifying liquid onto the surface of the substrate; and drying the surface of the substrate after performing the multiple cycles of the cleaning processing.

公开(公告)号：US20210066097A1

公开(公告)日：2021-03-04

申请号：US17009834

申请日：2020-09-02

Applicant: Tokyo Electron Limited

Inventor： Takahiro Shiozawa ,  Hiroki Tadatomo ,  Akiko Kai ,  Hiroshi Ichinomiya

IPC: H01L21/67 ,  H01L21/027 ,  H01L21/687

Abstract: A substrate processing method includes supplying a developing liquid configured to form a resist pattern onto a surface of a substrate on which a resist film is formed; performing multiple cycles of a cleaning processing of supplying a modifying liquid containing a modifying agent having a hydrophilic group onto the surface of the substrate on which the resist pattern is formed and supplying a rinse liquid configured to remove the modifying liquid onto the surface of the substrate; and drying the surface of the substrate after performing the multiple cycles of the cleaning processing.