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公开(公告)号：US11960209B2
公开(公告)日：2024-04-16
申请号：US16998231
申请日：2020-08-20
发明人： Akiko Kai , Hiroshi Ichinomiya
IPC分类号： G03F7/30
CPC分类号： G03F7/3021
摘要： A developing treatment method for performing a developing treatment on a resist film on a substrate, includes the following. (A) supplying a developing solution to the substrate and developing the resist film to form a resist pattern; (B) supplying a water-based cleaning liquid to the developed substrate to clean the substrate with the water-based cleaning liquid; (C) applying an aqueous solution of a water-soluble polymer to the substrate cleaned with the water-based cleaning liquid to form a hydrophilic layer having a hydrophilic property on a surface of the substrate; and (D) cleaning the substrate on which the hydrophilic layer has been formed, with a rinse liquid. (B) includes (a) accelerating a rotation speed of the substrate; and (b) after (a), decelerating the rotation speed of the substrate until a start of (C), wherein a deceleration in (b) is lower than an acceleration in (a).
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2.发明授权Substrate cleaning method, substrate cleaning apparatus and storage medium for cleaning substrate 有权基板清洗方法，基板清洗装置和清洁基板的存储介质公开(公告)号：US09307653B2
公开(公告)日：2016-04-05
申请号：US13733370
申请日：2013-01-03
CPC分类号： H05K3/26 , B08B3/024 , B08B5/02 , H01L21/67028 , H01L21/67034 , H05K2203/1509
摘要： A substrate cleaning method is capable of preventing a liquid stream on a substrate from being cut and circuit patterns thereon from being damaged. The substrate cleaning method includes a liquid film forming process that forms a liquid film on an entire substrate surface by supplying a cleaning liquid L from a central portion of the substrate W toward a peripheral portion thereof while rotating the substrate; a drying region forming process that discharges a gas G on the substrate surface and removes the cleaning liquid on the substrate surface; and a residual liquid removing process that removes the cleaning liquid remaining between the circuit patterns by discharging a gas G while moving in a diametrical direction of the substrate.
摘要翻译： 基板清洗方法能够防止基板上的液体流被切断，并且其上的电路图案被损坏。 基板清洗方法包括：通过在旋转基板的同时从基板W的中心部向其周边部供给清洗液L而在整个基板面上形成液膜的液膜形成工序; 干燥区域形成工序，其在基板表面上排出气体G并除去基板表面上的清洗液体; 以及残留液体去除处理，其通过沿着基板的直径方向移动而排出气体G而除去残留在电路图案之间的清洗液。
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公开(公告)号：US20210066097A1
公开(公告)日：2021-03-04
申请号：US17009834
申请日：2020-09-02
IPC分类号： H01L21/67 , H01L21/027 , H01L21/687
摘要： A substrate processing method includes supplying a developing liquid configured to form a resist pattern onto a surface of a substrate on which a resist film is formed; performing multiple cycles of a cleaning processing of supplying a modifying liquid containing a modifying agent having a hydrophilic group onto the surface of the substrate on which the resist pattern is formed and supplying a rinse liquid configured to remove the modifying liquid onto the surface of the substrate; and drying the surface of the substrate after performing the multiple cycles of the cleaning processing.
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4.发明授权公开(公告)号：US09704730B2
公开(公告)日：2017-07-11
申请号：US14283331
申请日：2014-05-21
CPC分类号： H01L21/67051
摘要： A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases.
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公开(公告)号：US20190096706A1
公开(公告)日：2019-03-28
申请号：US16139392
申请日：2018-09-24
IPC分类号： H01L21/67 , H01L21/687
摘要： When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.
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公开(公告)号：US10128136B2
公开(公告)日：2018-11-13
申请号：US15671325
申请日：2017-08-08
IPC分类号： H01L21/76 , H01L21/67 , B05C5/02 , B05C11/08 , B05C11/10 , B08B3/08 , B08B3/10 , G03F7/16 , H01L21/027 , G03F7/30
摘要： There is provided a guide member 3 in which an inclined surface 32 thereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding member 2 which surrounds the wafer W and in which an upper peripheral portion thereof is inwardly extended obliquely upwards. Further, the surrounding member 2 has, at an inner surface side thereof, two groove portions 23 extended along an entire circumference and located above a height position of the horizontally held wafer W. If an air flow flows along the surrounding member 2, a vortex flow is formed within the groove portions 23 and stays therein. Thus, mist can be captured, so that the flow of the mist to the outside of a cup body 1 can be suppressed. Accordingly, the adhesion of the mist to the wafer W can be suppressed.
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公开(公告)号：US20180047592A1
公开(公告)日：2018-02-15
申请号：US15671325
申请日：2017-08-08
CPC分类号： H01L21/6715 , B05C5/0258 , B05C11/08 , B05C11/1002 , B08B3/08 , B08B3/10 , G03F7/162 , G03F7/3021 , H01L21/0273 , H01L21/67051 , H01L21/67178
摘要： There is provided a guide member 3 in which an inclined surface 32 thereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding member 2 which surrounds the wafer W and in which an upper peripheral portion thereof is inwardly extended obliquely upwards. Further, the surrounding member 2 has, at an inner surface side thereof, two groove portions 23 extended along an entire circumference and located above a height position of the horizontally held wafer W. If an air flow flows along the surrounding member 2, a vortex flow is formed within the groove portions 23 and stays therein. Thus, mist can be captured, so that the flow of the mist to the outside of a cup body 1 can be suppressed. Accordingly, the adhesion of the mist to the wafer W can be suppressed.
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公开(公告)号：US11848189B2
公开(公告)日：2023-12-19
申请号：US17009834
申请日：2020-09-02
IPC分类号： H01L21/06 , H01L21/027 , H01L21/687 , H01L21/67
CPC分类号： H01L21/67028 , H01L21/027 , H01L21/6715 , H01L21/68764
摘要： A substrate processing method includes supplying a developing liquid configured to form a resist pattern onto a surface of a substrate on which a resist film is formed; performing multiple cycles of a cleaning processing of supplying a modifying liquid containing a modifying agent having a hydrophilic group onto the surface of the substrate on which the resist pattern is formed and supplying a rinse liquid configured to remove the modifying liquid onto the surface of the substrate; and drying the surface of the substrate after performing the multiple cycles of the cleaning processing.
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公开(公告)号：US11720026B2
公开(公告)日：2023-08-08
申请号：US16466864
申请日：2017-12-15
IPC分类号： G03F7/32 , H01L21/67 , H01L21/687 , G03F7/00
CPC分类号： G03F7/32 , H01L21/6715 , H01L21/67051 , H01L21/67098 , H01L21/68764 , G03F7/70925
摘要： A developing treatment method performs a developing treatment on a resist film on a substrate. The method includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.
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公开(公告)号：US11508589B2
公开(公告)日：2022-11-22
申请号：US16139392
申请日：2018-09-24
IPC分类号： H01L21/67 , H01L21/02 , H01L21/687
摘要： When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.
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